Plasma processing apparatus, and method and program for controlling elevation of focus ring
A plasma processing apparatus includes a mounting table, an acquisition unit, a calculation unit, and an elevation control unit. The mounting table mounts thereon a target object as a plasma processing target. The elevation mechanism vertically moves a focus ring surrounding the target object. The acquisition unit acquires state information indicating a measured state of the target object. The calculation unit calculates a height of the focus ring at which positional relation between an upper surface of the target object and an upper surface of the focus ring satisfies a predetermined distance based on the state of the target object that is indicated by the state information acquired by the acquisition unit. The elevation control unit controls the elevation mechanism to vertically move the focus ring to the height calculated by the calculation unit.
1. A plasma processing apparatus comprising:
a chamber;
a first mounting table, the first mounting table including a first base, an electrostatic chuck on the first base, and a substrate mounting surface on a top of the first mounting table, wherein a substrate is mounted on the substrate mounting surface;
a focus ring arranged to surround the substrate mounting surface;
a second mounting table, the second mounting table including a second base different from the first base and a focus ring mounting surface on a top of the second mounting table, the focus ring mounted on the focus ring mounting surface;
an elevation mechanism configured to vertically move the second base, the elevation mechanism including at least one actuator and at least one rod which connects the second base and the at least one actuator;
a measuring unit configured to acquire data of a height of an upper surface of the focus ring at a plurality of positions in a circumferential direction of the focus ring; and
a controller which includes an acquisition unit and a calculation unit,
wherein the acquisition unit is configured to acquire state information including data of a thickness of the substrate at each of a plurality of positions in a circumferential direction of the substrate, and
the calculation unit is configured to calculate a calculated height of the focus ring at which a positional relation between an upper surface of the substrate and the upper surface of the focus ring satisfies a predetermined distance for each of the plurality of positions in the circumferential direction of the substrate and the focus ring based on the state information of the substrate acquired by the acquisition unit and the data of the height of the focus ring acquired by the measuring unit,
wherein the controller is configured to control the plasma processing apparatus to:
(a) acquire, by the acquisition unit, the state information of the substrate at the plurality of different circumferential positions of the substrate;
(b) acquire, by the measuring unit, the data of the height of the focus ring at the plurality of different circumferential positions of the focus ring;
(c) calculate, by the calculating unit, the calculated height of the focus ring based on the state information at the plurality of different circumferential positions of the substrate and the height information at the plurality of different circumferential positions of the focus ring; and
(d) vertically move, by the elevation mechanism, the second base to move the focus ring to the calculated height.
2. The plasma processing apparatus according to claim 1 , wherein the controller includes a storage unit which stores the state information, and the acquisition unit is configured to receive the state information from the storage unit.
3. The plasma processing apparatus according to claim 1 , wherein the acquisition unit is connected to a network and the acquisition unit is configured to receive the state information from the network.
4. The plasma processing apparatus according to claim 1 , wherein the controller is configured to:
control the plasma processing apparatus to be at a processing temperature; and
perform (b) with the plasma processing apparatus at the processing temperature.
5. The plasma processing apparatus according to claim 4 , wherein the controller is configured to perform (b) once during plasma processing of one substrate.
6. The plasma processing apparatus according to claim 4 , wherein the controller is configured to perform (b) a plurality of times during processing of one substrate.
7. The plasma processing apparatus according to claim 1 , wherein the first base includes a flange, and the second base is supported on the flange.
8. The plasma processing apparatus according to claim 1 , wherein the first base includes a flange, and the at least one rod and an O-ring support the second base on the flange, and
wherein the O-ring is between a top surface of the flange and a bottom surface of the second base.
9. The plasma processing apparatus according to claim 1 , wherein the second mounting table includes at least one through hole extending vertically through the second mounting table;
the measurement unit includes a measurement control unit, and the measurement control unit includes: a light source configured to emit a laser light, a light emitting part, and an optical fiber connecting the light emitting part and the light source, and
wherein the light emitting part is positioned to direct the laser light through the at least one through hole and toward the focus ring.
10. The plasma processing apparatus according to claim 9 , wherein the first base includes a flange, and the second base is positioned above the flange;
a quartz window is mounted on the flange at a location vertically below the through hole; and
the light emitting part is positioned below the quartz window in the flange.
11. The plasma processing apparatus according to claim 1 , wherein the first mounting table includes a first coolant path and the second mounting table includes a second coolant path different from the first coolant path, the second coolant path including an inlet and an outlet, and
a first flexible line is connected to the inlet of the second coolant path and a second flexible line is connected to the outlet of the second coolant path.
12. The plasma processing apparatus according to claim 1 , wherein the second mounting table includes a focus ring heater, and the focus ring is positioned directly vertically above the focus ring heater.
13. The plasma processing apparatus according to claim 12 , further including a sheet member positioned vertically between the focus ring and the focus ring heater.
14. The plasma processing apparatus according to claim 1 , further including a flexible wiring electrically connecting the first mounting table and the second mounting table.
15. The plasma processing apparatus according to claim 1 , wherein in (c), the calculation unit of the controller is configured to calculate the calculated height which reduces a height difference between the upper surface of the focus ring and an upper surface of the substrate based on the state information of the substrate acquired by the acquisition unit and the data of the height of the focus ring acquired by the measurement unit.
16. The plasma processing apparatus according to claim 1 , wherein the controller is configured to control the calculation unit to determine the calculated height which reduces an inclination angle of holes formed in the substrate.
17. A plasma processing apparatus comprising:
a chamber;
a first mounting table, the first mounting table including a first base, an electrostatic chuck on the first base, and a substrate mounting surface on a top of the first mounting table, wherein a substrate is mounted on the substrate mounting surface;
a focus ring arranged to surround the substrate mounting surface;
an elevation mechanism configured to vertically move the focus ring, the elevation mechanism including at least one actuator and at least one rod which is connected to the at least one actuator;
a measuring unit configured to acquire data of a height of an upper surface of the focus ring at a plurality of positions in a circumferential direction of the focus ring; and
a controller which includes an acquisition unit and a calculation unit,
wherein the acquisition unit is configured to acquire state information including data of at least one of: a thickness of the substrate at each of a plurality of positions in a circumferential direction of the substrate, a shape of an end portion of the substrate, a type or thickness of deposits on a back surface of the substrate, an eccentricity of the substrate, and a warpage of the substrate, and
the calculation unit is configured to calculate a calculated height of the focus ring at which a positional relation between an upper surface of the substrate and the upper surface of the focus ring satisfies a predetermined distance for each of the plurality of positions in the circumferential direction of the substrate and the focus ring based on the state information of the substrate acquired by the acquisition unit and the data of the height of the focus ring acquired by the measuring unit,
wherein the controller is configured to control the plasma processing apparatus to:
(a) acquire, by the acquisition unit, the state information of the substrate;
(b) acquire, by the measuring unit, the data of the height of the focus ring;
(c) calculate, by the calculating unit, the calculated height of the focus ring; and
(d) vertically move, by the elevation mechanism, the focus ring to move the focus ring to the calculated height.
18. A plasma processing method comprising:
providing a plasma processing apparatus which includes:
a chamber;
a first mounting table, the first mounting table including a first base, an electrostatic chuck on the first base, and a substrate mounting surface on a top of the first mounting table;
a focus ring arranged to surround the substrate mounting surface;
a second mounting table, the second mounting table including a second base different from the first base and a focus ring mounting surface on a top of the second mounting table, the focus ring mounted on the focus ring mounting surface;
an elevation mechanism configured to vertically move the second base, the elevation mechanism including at least one actuator and at least one rod which connects the second base and the at least one actuator;
a measuring unit configured to acquire data of a height of an upper surface of the focus ring at a plurality of positions in a circumferential direction of the focus ring; and
a controller which includes an acquisition unit and a calculation unit,
wherein the acquisition unit is configured to acquire state information including data of a thickness of the substrate at each of a plurality of positions in a circumferential direction of the substrate, and
the calculation unit is configured to calculate a calculated height of the focus ring at which a positional relation between an upper surface of the substrate and the upper surface of the focus ring satisfies a predetermined distance for each of the plurality of positions in the circumferential direction of the substrate and the focus ring based on the state information of the substrate and the data of the height of the focus ring acquired by the measuring unit,
the method further comprising:
placing the substrate on the substrate mounting surface; and
using the controller to control the plasma processing apparatus to:
(a) acquire, by the acquisition unit, the state information of the substrate placed on the substrate mounting surface;
(b) acquire, by the measuring unit, the data of the height of the focus ring;
(c) calculate, by the calculating unit, the calculated height of the focus ring; and
(d) vertically move, by the elevation mechanism, the focus ring to the calculated height.