Light-emitting diode display device and manufacturing method thereof
A display device includes an ion implantation region, a first semiconductor layer, an active layer under the first semiconductor layer, and a second semiconductor layer under the active layer. The ion implantation region includes a plurality of ions and partitions the active layer into a plurality of light-emitting regions, and an average ion concentration ratio of each of the light-emitting regions is 2 to 15.
1. A display device comprising:
a first semiconductor layer;
an active layer under the first semiconductor layer;
a second semiconductor layer under the active layer; and
an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions,
wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15,
wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer.
2. The display device of claim 1 , wherein the average ion concentration ratio of the plurality of light-emitting regions is 4 to 10.
3. The display device of claim 1 , wherein an ion concentration ratio of each of the plurality of light-emitting regions is 20 or less.
4. The display device of claim 1 , wherein each of the plurality of light-emitting regions comprises a continuous section having a length of 1 μm or more in which an ion concentration ratio is 5 or less.
5. The display device of claim 1 , wherein each of the plurality of ions has a mass greater than a mass of a nitrogen ion.
6. The display device of claim 1 , wherein the plurality of ions comprises Ar ions.
7. The display device of claim 1 , wherein the ion implantation region is formed at a process temperature of 75° C. to 130° C.
8. A display device comprising:
a first semiconductor layer;
an active layer under the first semiconductor layer;
a second semiconductor layer under the active layer; and
an ion implantation region in the second semiconductor layer and the active layer to form a first light-emitting region separated from a second light-emitting region,
wherein a concentration peak of ions implanted into the ion implantation region is located at a level below an upper surface of the second semiconductor layer and wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer, and
wherein an average ion concentration ratio of the first light-emitting region and the second light-emitting region is 2 to 15.
9. The display device of claim 8 , wherein the ion implantation region has an ion distribution that gradually increases and then decreases from a surface of the second semiconductor layer in a direction toward the active layer.
10. The display device of claim 8 , wherein each ion of the ions implanted in the ion implantation region has a mass greater than a mass of a nitrogen ion.
11. The display device of claim 8 , wherein ions implanted in the ion implantation region comprise Ar ions.
12. The display device of claim 8 , wherein the first semiconductor layer comprises an n-type semiconductor layer, and
wherein the second semiconductor layer comprises a p-type semiconductor layer.
13. An electronic apparatus comprising:
a display device configured to output image information; and a processor configured to control an operation of the display device and transmit image information to the display device,
wherein the display device comprises:
a first semiconductor layer;
an active layer under the first semiconductor layer;
a second semiconductor layer under the active layer; and
an ion implantation region comprising a plurality of ions, the ion implantation region partitioning the active layer into a plurality of light-emitting regions, the ion implantation region separating the plurality of light-emitting regions from each other,
wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer,
wherein an average ion concentration ratio of the plurality of light-emitting regions is 2 to 15.
14. The electronic apparatus of claim 13 , wherein the average ion concentration ratio of the plurality of light-emitting regions is 4 to 10.
15. The electronic apparatus of claim 13 , wherein an ion concentration ratio of each of the plurality of light-emitting regions is 20 or less.
16. The electronic apparatus of claim 13 , wherein each of the plurality of light-emitting regions comprises a continuous section having a length of 1 μm or more in which an ion concentration ratio is 5 or less.
17. The electronic apparatus of claim 13 , wherein each ion of the plurality of ions has a mass greater than a mass of a nitrogen ion.
18. The electronic apparatus of claim 13 , wherein the plurality of ions comprises Ar ions.
19. A display device comprising:
a semiconductor layer; an active layer on the semiconductor layer; and
a plurality of ions in the semiconductor layer and the active layer,
wherein a light-emitting region of the display device comprises a first portion of the semiconductor layer and a second portion of the active layer, the second portion being directly in contact with the first portion, and the light-emitting region includes a first light-emitting sub-region and a second light-emitting sub-region;
a second semiconductor layer under the active layer, and
wherein a concentration of the plurality of ions in the light-emitting region is less than a concentration of the plurality of ions in a non-light-emitting region of the display device,
wherein the non-light emitting region separates the first light-emitting sub-region from the second light-emitting sub-region, and
wherein the depth of an ion concentration peak where a concentration of implanted ions is the maximum is less than the thickness of the second semiconductor layer and the depth of the ion concentration peak is greater than a distance from a position of the ion concentration peak to a driving layer direction surface of the active layer,
wherein an average ion concentration ratio of the light-emitting region is 2 to 15.
20. The display device of claim 19 , further comprising:
another semiconductor layer on the active layer;
a first electrode in the another semiconductor layer above the non-light-emitting region; and
a second electrode under the light-emitting region and contacting the semiconductor layer.