Granted Patent B2

US 12,316,231 · App. 17/741,086 · Granted May 27, 2025

Inventors: Shiladri Chakraborty (Calcutta, IN); Yongwan Park (College Park, MD); Alireza Khaligh (Arlington, VA)

Assignee: UNIVERSITY OF MARYLAND, COLLEGE PARK

H02M3/33571H02M1/0058H02M1/088H02M7/003

Abstract

Claims (65)

1. A half-bridge module, comprising:

a monolithic die;

a high-side transistor integrated in the monolithic die;

a low-side transistor integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the high-side transistor and the low-side transistor.

2. The half-bridge module of claim 1 , wherein each of the high-side transistor and the low-side transistor is a vertical power device such that a direction of main current of each of the high-side transistor and the low-side transistor is perpendicular to a top surface of the monolithic die.

3. The half-bridge module of claim 1 , wherein a first terminal of the decoupling capacitor is connected to a drain terminal of the high-side transistor, and

wherein a second terminal of the decoupling capacitor is connected to a source terminal of the low-side transistor.

4. The half-bridge module of claim 1 , wherein a drain terminal of the high-side transistor is connected to a positive voltage terminal, and

wherein a source terminal of the low-side transistor is connected to a negative voltage terminal or a ground terminal.

5. The half-bridge module of claim 1 , wherein the decoupling capacitor comprises a plurality of capacitors connected in parallel to a drain terminal of the high-side transistor and a source terminal of the low-side transistor.

6. The half-bridge module of claim 1 , wherein each of the high-side transistor and the low-side transistor is a lateral power device such that a direction of main current of each of the high-side transistor and the low-side transistor is in parallel to a top surface of the monolithic die.

7. The half-bridge module of claim 1 , wherein the high-side transistor is disposed in an opposite side to the low-side transistor such that main current flows in a U-shape.

8. The half-bridge module of claim 7 , wherein a source terminal of the low-side transistor is on a top surface of the monolithic die,

wherein a drain terminal of the low-side transistor is on a bottom surface of the monolithic die,

wherein a source terminal of the high-side transistor is on the bottom surface of the monolithic die, and

wherein a drain terminal of the high-side transistor is on the top surface of the monolithic die.

9. The half-bridge module of claim 1 , wherein the high-side transistor and the low-side transistor are symmetrically disposed in the monolithic die such that main current flows in an N-shape.

10. The half-bridge module of claim 9 , wherein a source terminal of the low-side transistor is on a top surface of the monolithic die,

wherein a drain terminal of the low-side transistor is connected from a bottom surface of the monolithic die to the top surface of the monolithic die,

wherein a source terminal of the high-side transistor is connected from the top surface of the monolithic die to the bottom surface of the monolithic die, and

wherein a drain terminal of the high-side transistor is on the bottom surface of the monolithic die.

11. The half-bridge module of claim 1 , wherein a source terminal of the low-side transistor and a source terminal of the high-side transistor share a common source terminal on a top surface of the monolithic die, and

wherein a drain terminal of the low-side transistor and a drain terminal of the high-side transistor are on a bottom surface of the monolithic die.

12. A half-bridge module, comprising:

a monolithic die;

a high-side transistor integrated in the monolithic die;

a low-side transistor integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the high-side transistor and the low-side transistor;

wherein a first terminal of the decoupling capacitor is connected to a drain terminal of the high-side transistor;

wherein a second terminal of the decoupling capacitor is connected to a source terminal of the low-side transistor; and

wherein a capacitance value of the decoupling capacitor is determined based on a distance between the drain terminal of the high-side transistor and the source terminal of the low-side transistor.

13. A half-bridge module, comprising:

a monolithic die;

a first switch integrated in the monolithic die;

a second switch integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the first switch and the second switch and having a capacitance value based on a distance between an output terminal of the first switch and an input terminal of the second switch.

14. The half-bridge module of claim 13 , wherein the first switch comprises a high-side transistor, and

wherein the second switch comprises a low-side transistor.

15. The half-bridge module of claim 14 , wherein each of the high-side transistor and the low-side transistor is a vertical power device such that a direction of main current of each of the high-side transistor and the low-side transistor is perpendicular to a top surface of the monolithic die.

16. The half-bridge module of claim 14 , wherein the input terminal of the first switch comprises a drain terminal and the output terminal of the second switch comprises a source terminal, and further wherein a first terminal of the decoupling capacitor is connected to the drain terminal of the high-side transistor, and

wherein a second terminal of the decoupling capacitor is connected to the source terminal of the low-side transistor.

17. The half-bridge module of claim 14 , wherein each of the high-side transistor and the low-side transistor is a lateral power device such that a direction of main current of each of the high-side transistor and the low-side transistor is in parallel to a top surface of the monolithic die.

18. A half-bridge module, comprising:

a monolithic die;

a high-side transistor integrated in the monolithic die;

a low-side transistor integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the high-side transistor and the low-side transistor;

wherein the first switch comprises a high-side transistor and the second switch comprises a low-side transistor; and

wherein the high-side transistor is disposed in an opposite side to the low-side transistor such that main current flows in a U-shape.

19. A half-bridge module, comprising:

a monolithic die;

a high-side transistor integrated in the monolithic die;

a low-side transistor integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the high-side transistor and the low-side transistor;

wherein the first switch comprises a high-side transistor and the second switch comprises a low-side transistor; and

wherein the high-side transistor and the low-side transistor are symmetrically disposed in the monolithic die such that main current flows a N-shape.

20. A half-bridge module, comprising:

a monolithic die;

a high-side transistor integrated in the monolithic die;

a low-side transistor integrated in the monolithic die; and

a decoupling capacitor integrated in the monolithic die, the decoupling capacitor disposed between the high-side transistor and the low-side transistor;

wherein the first switch comprises a high-side transistor and the second switch comprises a low-side transistor; and

wherein a source terminal of the low-side transistor and a source terminal of the high-side transistor share a common source terminal on a top surface of the monolithic die, and

wherein a drain terminal of the low-side transistor and a drain terminal of the high-side transistor are on a bottom surface of the monolithic die.

Assignments (1)

Continuity (1)

References Cited (22)