Semiconductor device
A semiconductor device including a drift region and a buffer region is provided. The drift region of a first conductivity type is provided in a semiconductor substrate. The buffer region of the first conductivity type includes at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate. A curve connecting the at least six peaks includes an upwardly-convex portion.
1. A semiconductor device comprising:
a drift region of a first conductivity type provided in a semiconductor substrate; and
a buffer region of the first conductivity type, the buffer region including at least six peaks in a doping concentration distribution in a depth direction of the semiconductor substrate, a curve connecting the at least six peaks including an upwardly-convex portion.
2. The semiconductor device according to claim 1 , wherein
the at least six peaks in the doping concentration distribution of the buffer region include a first peak positioned closest to a back surface of the semiconductor substrate, an upper-surface-side peak positioned closest to the drift region, and a plurality of intermediate peaks positioned between the first peak and the upper-surface-side peak, and
a doping concentration of the buffer region is higher than a doping concentration of the drift region.
3. The semiconductor device according to claim 2 , wherein
one peak of the plurality of intermediate peaks has a highest doping concentration in the doping concentration distribution of the buffer region.
4. The semiconductor device according to claim 2 , wherein
among the plurality of intermediate peaks, an intermediate peak positioned closest to the back surface of the semiconductor substrate has a highest doping concentration in the doping concentration distribution of the buffer region.
5. The semiconductor device according to claim 1 , wherein
the upwardly-convex portion is a part of the curve connecting the at least six peaks.
6. The semiconductor device according to claim 1 , wherein
in the doping concentration distribution, a curve connecting five peaks among the at least six peaks includes the upwardly-convex portion.
7. The semiconductor device according to claim 2 , wherein
the upwardly-convex portion is formed by a curve connecting the first peak and the plurality of intermediate peaks.
8. The semiconductor device according to claim 2 , wherein
a doping concentration of the upper-surface-side peak is higher than a doping concentration of an intermediate peak positioned closest to the drift region among the plurality of intermediate peaks.
9. The semiconductor device according to claim 2 , wherein
a doping concentration of the first peak is higher than a doping concentration of any one peak of the upper-surface-side peak and the plurality of intermediate peaks.
10. The semiconductor device according to claim 2 , wherein
a doping concentration of the first peak and a doping concentration of an intermediate peak positioned closest to the back surface of the semiconductor substrate among the plurality of intermediate peaks are not smaller than 1E15 cm −3 and not greater than 1E16 cm −3 .
11. The semiconductor device according to claim 1 , wherein
the buffer region includes hydrogen.
12. The semiconductor device according to claim 1 , wherein
the at least six peaks are based on hydrogen-induced donors.
13. The semiconductor device according to claim 1 , further comprising a trench provided at an upper surface side of the semiconductor substrate.
14. The semiconductor device according to claim 1 , wherein
the at least six peaks in the doping concentration distribution of the buffer region includes at least seven peaks.
15. The semiconductor device according to claim 1 , wherein
the semiconductor device is a diode having a cathode region of the first conductivity type provided at a back surface side of the semiconductor substrate.
16. The semiconductor device according to claim 2 , wherein
the semiconductor device is an IGBT having a collector region of a second conductivity type provided at a back surface side of the semiconductor substrate.
17. The semiconductor device according to claim 16 , wherein
in the depth direction of the semiconductor substrate, a distance from the back surface of the semiconductor substrate to a boundary between the first peak and the collector region is smaller than a distance from the boundary between the first peak and the collector region to the first peak.
18. The semiconductor device according to claim 2 , wherein
the semiconductor device includes a transistor portion and a diode portion.
19. A semiconductor device comprising:
a drift region of a first conductivity type provided in a semiconductor substrate; and
a buffer region of the first conductivity type, the buffer region including at least five peaks in a doping concentration distribution in a depth direction of the semiconductor substrate, a shape of a curve connecting the at least five peaks being upwardly-convex.