Electroconductive film and temperature sensor film
Provided is an electroconductive film having a metal thin-film on a resin film base; and a temperature sensor film which is obtained by patterning the metal thin-film on the resin film base. An electroconductive film ( 101 ) which is used for the production of a temperature sensor film comprises a metal thin-film ( 10 ) on one principal surface of a resin film base ( 50 ), with a chromium oxide thin-film ( 21 ) serving as an underlying layer interposed therebetween. A temperature sensor film is obtained by patterning the metal thin-film so as to form a thermometric resistor part and a lead part that is connected to the thermometric resistor part.
1. An electroconductive film for a temperature sensor,
the electroconductive film comprising: a resin film base; a metal thin-film disposed on one principal surface of the resin film; and an underlying layer interposed between the resin film and the metal thin-film, wherein
the underlying layer includes a chromium oxide thin-film and a silicon-based thin-film in this order from a side of the resin film base.
2. The electroconductive film according to claim 1 , wherein a thickness of the underlying layer is 3 to 100 nm.
3. The electroconductive film according to claim 1 , wherein the silicon-based thin-film is a silicon oxide thin-film.
4. The electroconductive film according to claim 1 , wherein the metal thin-film is in contact with the silicon-based thin-film.
5. The electroconductive film according to claim 1 , wherein the resin film base includes a hard coat layer formed on a surface of a resin film, and
the underlying layer is disposed on the hard coat layer.
6. The electroconductive film according to claim 5 , wherein the hard coat layer contains fine particles.
7. The electroconductive film according to claim 1 , wherein the chromium oxide thin-film is in contact with the resin film base.
8. The electroconductive film according to claim 1 , wherein the metal thin-film is formed of nickel or a nickel alloy.
9. The electroconductive film according to claim 1 , wherein a temperature coefficient of resistance of the metal thin-film is 3,000 ppm/° C. or more.
10. The electroconductive film according to claim 1 , wherein a thickness of the metal thin-film is 20 to 500 nm.
11. A method for producing the electroconductive film set forth in claim 1 , the method comprising depositing the chromium oxide thin-film and the metal thin-film by a sputtering method.
12. A temperature sensor film comprising:
a resin film base; an underlying layer formed on one principal surface of the resin film base; and a metal thin-film patterned on the underlying layer, wherein
the metal thin-film is patterned to form a thermometric resistor part patterned into a thin wire and used for measuring a temperature and a lead part connected to the thermometric resistor part and patterned to have a larger wiring width than that of the thermometric resistor part, and
the underlying layer includes a chromium oxide thin-film and a silicon-based thin-film in this order from a side of the resin film base.