Integrated silicon photonics transceivers enabling ultra-high-speed high dense input/output and interconnect for Terabyte per second optical interconnect

1. An apparatus comprising:

a photonic integrated circuit (PIC) on a first semiconductor die having a first side and a second side opposite the first side, wherein the first side includes a first optical circuit and a second optical circuit and the second side is to electrically couple with a substrate, wherein the first optical circuit comprises:

a traveling wave Mach Zehnder modulator (TW MZM) comprising a 2D array of pads including a first row comprising an adjacent pair of RF input pads between two RF ground pads and including a second row of RF ground pads;

a pair of signal lines extending away from a first side of the 2D array of pads along opposite sides of a pair of adjacent optical waveguides, and coupled to the adjacent pair of RF input pads to receive and propagate an RF traveling wave;

an optical splitter on a second, opposite, side of the 2D array of pads to receive an optical input signal and output a pair of optical signals to the pair of adjacent optical waveguides under the RF traveling wave; and

an RF termination and bias circuit coupled to an opposite end of the pair of signal lines and comprising a first RF ground capacitor integrated into the PIC, the first RF ground capacitor to couple in parallel with a second, larger, capacitor, external to the PIC;

a driver on a second semiconductor die, wherein a corresponding 2D array of pads of the driver are flip chip bonded to the 2D array of pads of the TW MZM; and

an application specific integrated circuit (ASIC) on a third semiconductor die, wherein the ASIC comprises:

a digital signal processor to output first digital data and receive second digital data;

a digital-to-analog converter to convert the first digital data to first analog data, the digital-to-analog converter to couple to the driver through silicon vias (TSVs) in the first semiconductor die.

2. The apparatus of claim 1 , wherein the apparatus comprises a package comprising the PIC, the second semiconductor die and the third semiconductor die, wherein the PIC and the third semiconductor die are both attached to the substrate.

3. The apparatus of claim 1 , wherein a second optical circuit in the PIC further comprises:

a photodetector comprising a 2D array of pads including a first row comprising a single RF input output pad between two RF ground pads and including a second row of RF ground pads to couple to a corresponding 2D array of pads of a transimpedance amplifier on the second semiconductor die.

4. The apparatus of claim 3 , wherein the 2D array of pads of the transimpedance amplifier are flip chip bonded to the 2D array of pads of the photodetector.

5. The apparatus of claim 3 , wherein the ASIC comprises

an analog-to-digital converter to convert second analog data to the second digital data, the analog-to-digital converter to couple to the transimpedance amplifier.

6. The apparatus of claim 3 , wherein the PIC comprises:

a plurality of modulators, each to modulate an optical input signal with a radio frequency (RF) input signal; and

a plurality of photodetectors each to receive an optical input signal and output an RF output signal.

7. The apparatus of claim 3 , further comprising an interface circuit coupled to the PIC, the interface circuit comprising an optical input/output circuit to couple the modulator and the photodetector to an optical fiber.

8. The apparatus of claim 1 , wherein the first optical circuit comprises at least one laser or at least one semiconductor optical amplifier.

9. An integrated optical transceiver comprising:

a package comprising:

a substrate having radio frequency (RF) interconnects;

a digital signal processor (DSP) application specific integrated circuit (DSP ASIC) on a first semiconductor die coupled to the substrate via first flip chip bonds;

a photonic integrated circuit (PIC) coupled to the substrate via second flip chip bonds, the PIC comprising a second semiconductor die; and

an electrical circuit comprising a third semiconductor die coupled to the PIC via third flip chip bonds, the electrical circuit comprising at least one driver and at least one transimpedance amplifier;

wherein the PIC comprises a plurality of through silicon vias (TSVs) formed through the semiconductor die to electrically couple the DSP ASIC with the electrical circuit, and comprises:

a travelling wave Mach Zehnder modulator (TW MZM) comprising a 2D array of pads including a first row comprising an adjacent pair of RF input pads between two RF ground pads and including a second row of RF ground pads;

a pair of signal lines extending away from a first side of the 2D array of pads along opposite sides of a pair of adjacent optical waveguides, and coupled to the adjacent pair of RF input pads to receive and propagate an RF traveling wave;

an optical splitter on a second, opposite, side of the 2D array of pads to receive an optical input signal and output a pair of optical signals to the pair of adjacent optical waveguides under the RF traveling wave; and

an RF termination and bias circuit coupled to an opposite end of the pair of signal lines, and comprising a first RF ground capacitor integrated into the PIC, the first RF ground capacitor to couple in parallel with a second, larger, capacitor, external to the PIC.

10. The integrated optical transceiver of claim 9 , wherein the PIC comprises a plurality of channels, each of the plurality of channels comprising a modulator.

11. The integrated optical transceiver of claim 9 , wherein the second semiconductor die comprises:

a photodetector circuit directly coupled to the at least one transimpedance amplifier via a second portion of the third flip chip bonds.