IP Library › Granted Patent US 12,322,570
Granted Patent B2
US 12,322,570 · App. 18/160,315 · Granted Jun 3, 2025

Pulsing assembly and power supply arrangement

Inventors: Andrzej Klimczak (Warsaw, PL); Andrzej Gieraltowski (Warsaw, PL); Michal Balcerak (Marki, PL)
Assignee: TRUMPF HUETTINGER SP. Z O. O.
H01J37/32009H01J37/32146H01J2237/327H02J7/345
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Quick Facts
Patent No.
US 12,322,570
App. No.
18/160,315
Granted
Jun 3, 2025
Kind
B2
Abstract

A pulsing assembly for delivering power to a plasma reactor having a first load between a first plasma reactor input port and a plasma reactor common port and having a second load between a second plasma reactor input port and the plasma reactor common port. The pulsing assembly includes a first pulsing unit, a second pulsing unit and an energy storage component connected therebetween. The first pulsing unit includes a first input port connectable to a power source, a pulsing assembly common port connectable to the plasma reactor common port, a first output port connectable to the first load of the plasma reactor for supplying pulses between the first output port and the pulsing assembly common port. The second pulsing unit includes a second input port connectable to a power source and a second output port connectable to the second load of the plasma reactor.

Claims (37)

1. A pulsing assembly for delivering power to a plasma reactor having a first load between a first plasma reactor input port and a plasma reactor common port and a second load between a second plasma reactor input port and the plasma reactor common port, the pulsing assembly comprising:

a first pulsing unit comprising:

a first input port connectable to a first power source,

a pulsing assembly common port connectable to a ground and/or to the plasma reactor common port,

a first output port connectable to the first load of the plasma reactor for supplying pulses between the first output port and the pulsing assembly common port, and

a first high side switch connected to the first input port and the first output port,

a second pulsing unit comprising:

a second input port connectable to the first power source or a second power source, and

a second output port connectable to the second load of the plasma reactor for supplying pulses between the second output port and the pulsing assembly common port, and

an energy storage component connected between the first pulsing unit and the second pulsing unit.

2. The pulsing assembly according to claim 1 , wherein the pulsing assembly is configured to deliver energy from the first input port to the first output port during a first pulsing time period.

3. The pulsing assembly according to claim 1 , wherein the energy storage component is connected between the first output port of the first pulsing unit and the second output port of the second pulsing unit.

4. The pulsing assembly according to claim 1 , wherein the pulsing assembly is configured to charge the energy storage component with energy during a second pulsing time period.

5. The pulsing assembly according to claim 1 , wherein the pulsing assembly is configured to deliver energy from the energy storage component to the second output port during a third pulsing time period.

6. The pulsing assembly according to claim 1 , wherein the second pulsing unit comprises a second high side switch connected to the storage energy component and second output port.

7. The pulsing assembly according to claim 6 , wherein the first high side switch of the first pulsing unit and the second high side switch of the second pulsing unit are configured to be switched on and/or off in a synchronized manner.

8. The pulsing assembly according to claim 1 , further comprising a rectifying component disposed between the energy storage component and the second input port.

9. The pulsing assembly according to claim 1 , wherein the pulsing assembly is configured to provide a voltage pulse measured to the pulsing assembly common port and/or the ground at at least one of the first output port and the second output port that is higher than output voltages of the first pulsing unit and the second pulsing unit.

10. The pulsing assembly according to claim 1 wherein the second pulsing unit comprises a second pulsing unit common port connected to the first output port of the first pulsing unit.

11. The pulsing assembly according to claim 1 ,

wherein the first power source and/or the second power source is a DC power source.

12. A pulsing assembly for delivering power to a plasma reactor having a first load between a first plasma reactor input port and a plasma reactor common port and a second load between a second plasma reactor input port and the plasma reactor common port, the pulsing assembly comprising:

a first pulsing unit comprising:

a first input port connectable to a first power source,

a pulsing assembly common port connectable to a ground and/or to the plasma reactor common port,

a first output port connectable to the first load of the plasma reactor for supplying pulses between the first output port and the pulsing assembly common port, and

a low side switch connected to the first output port and the pulsing assembly common port,

a second pulsing unit comprising:

a second input port connectable to the first power source or a second power source, and

a second output port connectable to the second load of the plasma reactor for supplying pulses between the second output port and the pulsing assembly common port, and

an energy storage component connected between the first pulsing unit and the second pulsing unit.

13. The pulsing assembly according to claim 12 , wherein the second pulsing unit comprises a second low side switch connected to the second output port and the first output port.

14. A method of supplying power to a plasma reactor having a first load between a first plasma reactor input port and a plasma reactor common port and a second load between a second plasma reactor input port and the plasma reactor common port using a pulsing assembly, the method comprising:

delivering energy from a first input port to the first load via a first output port of a first pulsing unit of the pulsing assembly during a first pulsing time period,

charging an energy storage component connected between the first pulsing unit and a second pulsing unit of the pulsing assembly with energy from a power source connected to a second input port of the second pulsing unit during a second pulsing time period, and

delivering energy from the energy storage component to the second load via a second output port of the second pulsing unit during a third pulsing time period,

wherein the first pulsing unit of the pulsing assembly comprises a high side switch connected to the first input port and the first output port of the first pulsing unit, wherein the high side switch is configured for controlling the charging the energy storage component or the delivering the energy from the energy storage component.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 11, 2025
From: KLIMCZAK, ANDRZEJ; GIERALTOWSKI, ANDRZEJ; BALCERAK, MICHAL
To: TRUMPF HUETTINGER SP. Z O. O.
Reel/Frame 070807/0199 →
Priority Claims (1)
EP 20461554 · Jul 29, 2020 · regional
Continuity (2)
Continuation PCTEP2021071165 · Jul 28, 2021
Related Publication 20230170184A1 · Jun 1, 2023
References Cited (58)
US 4555754A · Hennevin · 1985 [cited by applicant]
US 4670667A · Petit · 1987 [cited by applicant]
US 5286360A · Szczyrbowski et al. · 1994 [cited by applicant]
US 5969964A · Mangtani · 1999 [cited by applicant]
US 6096174A · Teschner et al. · 2000 [cited by applicant]
US 6488807B1 · Collins et al. · 2002 [cited by applicant]
US 6859087B2 · Galli et al. · 2005 [cited by applicant]
US 6963498B2 · Nadd · 2005 [cited by applicant]
US 8536929B2 · Bergmann · 2013 [cited by applicant]
US 8962488B2 · Liao et al. · 2015 [cited by applicant]
US 10347500B1 · Doh et al. · 2019 [cited by applicant]
US 20010017783A1 · Bruckmann et al. · 2001 [cited by applicant]
US 20020004309A1 · Collins et al. · 2002 [cited by applicant]
US 20040055881A1 · Christie · 2004 [cited by applicant]
US 20040124077A1 · Christie · 2004 [cited by examiner]
US 20100248488A1 · Agarwal et al. · 2010 [cited by applicant]
US 20120038677A1 · Hiroi et al. · 2012 [cited by applicant]
US 20140232266A1 · Finley · 2014 [cited by examiner]
US 20150268486A1 · Edler · 2015 [cited by applicant]
US 20160043546A1 · Lendi · 2016 [cited by applicant]
US 20160203958A1 · Arase et al. · 2016 [cited by applicant]
US 20180358213A1 · Ruzic et al. · 2018 [cited by applicant]
US 20190088521A1 · Chua et al. · 2019 [cited by applicant]
US 20190088522A1 · Lindley et al. · 2019 [cited by applicant]
US 20190198298A1 · Hirose et al. · 2019 [cited by applicant]
US 20200411288A1 · Wang · 2020 [cited by examiner]
US 20220415614A1 · Yang · 2022 [cited by examiner]
CN 203504399U · 2014 [cited by applicant]
CN 105356779A · 2016 [cited by applicant]
CN 105406722B · 2018 [cited by applicant]
DE 19651811A1 · 1998 [cited by applicant]
DE 102012222606A1 · 2014 [cited by applicant]
DE 102013212099A1 · 2015 [cited by applicant]
DE 102016223314A1 · 2018 [cited by applicant]
EP 0553410A1 · 1993 [cited by applicant]
EP 2533411A1 · 2012 [cited by applicant]
FR 2547106A1 · 1984 [cited by applicant]
JP H06197522A · 1994 [cited by applicant]
JP H0767320A · 1995 [cited by applicant]
JP 2003129234A · 2003 [cited by applicant]
JP 2010116578A · 2010 [cited by applicant]
WO WO2005005684A1 · 2005 [cited by applicant]
WO WO2008071732A1 · 2008 [cited by applicant]
WO WO2010116578A1 · 2010 [cited by applicant]
WO WO2016026790A2 · 2016 [cited by applicant]
WO WO2019049158A1 · 2019 [cited by applicant]
WO WO2019212592A1 · 2019 [cited by applicant]
L.M. Redondo et al, “All Silicon Marx-bank Topology for High-voltage, High-frequency Rectangular Pulses,” Annual IEEE Conference on Power Electronics Specialists (PESC), Jun. 2005, pp. 1170-1174, IEEE, Dresden, Germany. [cited by applicant]
Ahmed Abbas Elserougi et al; “Conceptual Study of a Bipolar Modular High-Voltage Pulse Generator with Sequential Charging,” IEEE Transactions on Dielectrics and Electrical Insulation 23(6), Dec. 2016, pp. 1-8, IEEE, Pis… [cited by applicant]
C. Gerster, “Fast high-power/high-voltage switch using series-connected IGBTs with active gate-controlled voltage-balancing,” Proceedings of 1994 IEEE Applied Power Electronics Conference and Exposition—ASPEC'94, Feb. 1… [cited by applicant]
D Gahan et al, “Ion energy distribution measurements in rf and pulsed dc plasma discharges,” Plasma Sources Science and Technology, Apr. 2012, pp. 1-4, vol. 21, No. 4, IOP Publishing Ltd, Bristol, United Kingdom. [cited by applicant]
Y. H. Man et al, “Influence of plasma condition on carbon nanotube growth by rf-PECVD,” Nano-Micro Letters, 2010, pp. 37-41, Springer Link, Berlin, Germany. [cited by applicant]
Hiren Canacsinh et al, “Isolated Autonomous Capacitive Power Supplies to Trigger Floating Semiconductors in a Marx Generator,” 2007 IEEE International Symposium on Industrial Electronics, Jun. 2007, pp. 1-6, IEEE, Vigo,… [cited by applicant]
J. Saiz, “Optimisation and integration of an active clamping circuit for IGBT series association,” Conference Record of the 2001 IEEE Industry Applications Conference. 36th IAS Annual Meeting (Cat. No.01CH37248), Sep. 2… [cited by applicant]
Soonwook Hong et al, “Series connection of IGBT's with active voltage balancing,” IEEE Transactions on Industry Applications, Aug. 1999, pp. 917-923, vol. 35, Issue 4, IEEE, Piscataway, New Jersey, United States. [cited by applicant]
Shiqi Ji et al,“Series-connected HV-IGBTs using active voltage control with status feedback circuit,” 2014 IEEE Energy Conversion Congress and Exposition (ECCE), Sep. 2014, pp. 710-715, IEE, Pittsburgh, PA, USA. [cited by applicant]
The Van Nguyen et al, “Series connection of IGBT,” 2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC), Feb. 2010, pp. 2238-2244, IEEE, Palm Springs, CA, USA. [cited by applicant]
M.A. Huque et al, “Silicon-on-insulator-based high-voltage, high-temperature integrated circuit gate driver for silicon carbide-based power field effect transistors” , IET Power Electronics, Nov. 2010, pp. 1001-1009, vo… [cited by applicant]