Optoelectronic device manufacturing method
View Patent ↗A method of manufacturing an optoelectronic device, including the steps of: a) arranging an active photosensitive diode stack on a first substrate; b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate; c) arranging an active light-emitting diode stack on a third substrate; and d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate.
1. Optoelectronic device manufacturing method, comprising the steps of:
a) arranging an active photosensitive diode stack on a first substrate;
b) transferring the active photosensitive diode stack onto an integrated control circuit previously formed inside and on top of a second semiconductor substrate, and then removing the first substrate;
c) arranging an active light-emitting diode stack on a third substrate;
d) after steps b) and c), transferring the active light-emitting diode stack onto the active photosensitive diode stack, and then removing the third substrate; and
after step d), a step of local etching of the active light-emitting diode stack to form in the active light-emitting diode stack a plurality of tiles, each defining a light-emitting diode.
2. Method according to claim 1 , wherein the active photosensitive diode stack comprises at least one inorganic semiconductor layer, for example, made of a III-V material, and wherein the active light-emitting diode stack comprises at least one inorganic semiconductor layer, for example, made of a III-V material.
3. Method according to claim 1 , wherein the active photosensitive diode stack comprises first, second, and third semiconductor layers, the second layer being arranged between the first and third layers.
4. Method according to claim 3 , comprising a step of P-type doping of local portions of the first layer, said portions defining anode regions of photosensitive diodes of the device.
5. Method according to claim 4 , wherein said step of P-type doping of the local portions of the first layer is implemented after step b) and before step d).
6. Method according to claim 4 , wherein said step of P-type doping of the local portions of the first layer is implemented before step b).
7. Method according to claim 4 , further comprising a step of forming of connection metallizations on top of and in contact with said local portions of the first layer.
8. Method according to claim 1 , wherein, at the end of step b), the active photosensitive diode stack continuously extends over the entire surface of the integrated control circuit.
9. Method according to claim 1 , wherein, at the end of step d), the active light-emitting diode stack continuously extends over the entire surface of the integrated control circuit.
10. Method according to claim 1 , further comprising, after step b) and before step d), a step of forming of conductive vias crossing the active photosensitive diode stack.
11. Method according to claim 10 , wherein the conductive vias are electrically connected to metal connection pads of the integrated circuit.
12. Method according to claim 1 , comprising the forming of color conversion elements, above at least some of the light-emitting diodes.
13. Method according to claim 12 , wherein at least one of said light-emitting diodes is topped with a photoluminescent conversion element adapted to converting the light emitted by the light-emitting diode into a visible wavelength and at least another one of said light-emitting diodes is topped with a photoluminescent conversion element adapted to converting the light emitted by the light-emitting diode into a light radiation in the wavelength range of sensitivity of the active photosensitive diode stack, preferably an infrared radiation.
14. Method according to claim 13 , wherein at least one of said light-emitting diodes is not topped with a photoluminescent conversion element.
15. Method according to claim 12 , wherein said photoluminescent conversion elements, are formed based on quantum dots or on perovskite materials.
16. System comprising an optoelectronic device formed by a method according to claim 1 , and a light source adapted to emitting a light radiation in the wavelength range of sensitivity of the active photosensitive diode stack, preferably an infrared radiation.
17. System according to claim 16 , wherein the light source is a remote source.
18. System according to claim 16 , wherein the light source is integrated to the optoelectronic device and comprises at least one light-emitting diode formed in the active light-emitting diode stack.