Granted Patent B2

US 12,324,302 · App. 17/795,016 · Granted Jun 3, 2025

Inventors: Hsing-Hung Hsieh (Taipei, TW); Kuan-Ting Wu (Taipei, TW); Chi Hao Chang (Taipei, TW)

Assignee: Hewlett-Packard Development Company, L.P.

H10K50/30H10K59/12H10K71/00H10K59/1201

Abstract

Claims (70)

1. A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:

a first plate device comprising:

a first substrate;

a gate layer adjacent to the first substrate; and

a dielectric layer adjacent to the gate layer;

a second plate device connected to the first plate device, wherein the second plate device comprises:

a second substrate;

a source/drain layer adjacent to the second substrate; and

a stacked active organic layer adjacent to the source/drain layer,

wherein the first plate device and the second plate device are to be independently fabricated and joined together to position the stacked active organic layer adjacent to the dielectric layer, and

wherein the source/drain layer comprises:

a first side comprising a first planar surface contacting the second substrate; and

a second side opposite to the first side, wherein an entirety of the second side comprises a second planar surface contacting the stacked active organic layer.

2. The device of claim 1 , wherein the stacked active organic layer comprises:

an n-type transport layer;

an emitting layer partially surrounding the n-type transport layer; and

a p-type transport layer partially surrounding the emitting layer.

3. The device of claim 2 , wherein the n-type transport layer contacts the second planar surface and the second substrate, wherein the p-type transport layer contacts the second planar surface, and wherein the emitting layer contacts the second planar surface.

4. The device of claim 2 , wherein the emitting layer surrounds three sides of the n-type transport layer, wherein the p-type transport layer surrounds three sides of the emitting layer, and wherein the p-type transport layer surrounds three sides of the n-type transport layer.

5. The device of claim 1 , wherein the stacked active organic layer comprises:

a p-type transport layer;

an emitting layer partially surrounding the p-type transport layer; and

an n-type transport layer partially surrounding the emitting layer.

6. A dual plate Organic Light-Emitting Field-Effect Transistor (OLET) display device comprising:

a first substrate;

a gate layer contacting the first substrate;

a dielectric layer contacting the gate layer;

a stacked active organic layer contacting the dielectric layer;

a pair of source electrodes contacting the stacked active organic layer;

a drain electrode contacting the stacked active organic layer, wherein the in electrode is aligned and spaced apart from the pair of source electrodes; and

a second substrate contacting the pair of source electrodes, the drain electrode, and a portion of the stacked active organic layer,

wherein the first substrate, the gate layer, and the dielectric layer are fabricated together prior to connecting the dielectric layer to the stacked active organic layer.

7. The device of claim 6 , wherein each side of the pair of source electrodes and the drain electrode is planar, and wherein a gap between the drain electrode and a source electrode of the pair of source electrodes is less than 3 μm.

8. The device of claim 7 , wherein the stacked active organic layer comprises:

an n-type transport layer that fills the gap and contacts the second substrate;

an emitting layer partially surrounding the n-type transport layer; and

a p-type transport layer partially surrounding the emitting layer, wherein the p-type transport layer contacts the dielectric layer.

9. The device of claim 7 , wherein the stacked active organic layer comprises:

a p-type transport layer that fills the gap and contacts the second substrate;

an emitting layer partially surrounding the p-type transport layer; and

an n-type transport layer partially surrounding the emitting layer, wherein the n-type transport layer contacts the dielectric layer.

10. A method of manufacturing a semiconductor device, the method comprising:

forming a first Organic Light-Emitting Field-Effect Transistor (OLET) display device;

forming a second OLET display device independently of the first OLET display device; and

attaching the first OLET display device to the second OLET display device.

11. The method of claim 10 , wherein forming the first OLET display device comprises:

providing a first substrate;

depositing a gate layer on the first substrate; and

depositing a dielectric layer on the gate layer.

12. The method of claim 11 , wherein forming the second OLET display device comprises:

providing a second substrate;

depositing a source/drain layer on the second substrate;

patterning the source/drain layer such that each surface of patterned source and drain electrodes are planar; and

depositing a stacked active organic layer on the source/drain layer.

13. The method of claim 12 , wherein depositing the stacked active organic layer comprises:

depositing an n-type transport layer that fills gaps in the patterned source/drain layer, wherein the n-type transport layer contacts the second substrate and source and drain electrodes in the source/drain layer;

depositing an emitting layer on the n-type transport layer, wherein the emitting layer contacts source electrodes in the source/drain layer; and

depositing a p-type transport layer on the emitting layer, wherein the p-type transport layer contacts the source electrodes in the source/drain layer.

14. The method of claim 12 , wherein depositing the stacked active organic layer comprises:

depositing a p-type transport layer that fills gaps in the patterned source/drain layer, wherein the p-type transport layer contacts the second substrate and source and drain electrodes in the source/drain layer;

depositing an emitting layer on the p-type transport layer, wherein the emitting layer contacts source electrodes in the source/drain layer; and

depositing an n-type transport layer on the emitting layer, wherein the n-type transport layer contacts the source electrodes in the source/drain layer.

15. The device of claim 1 , wherein a channel length of the second plate device is less than 3 μm.

16. The device of claim 1 , wherein the source/drain layer includes a first electrode, a second electrode, and a gap between the first electrode and the second electrode.

17. The device of claim 16 , wherein the stacked organic layer fills the gap.

18. The device of claim 6 , wherein a distance between an outer side edge of a first source electrode of the pair of source electrodes and an outer side edge of a second source electrode of the pair of source electrodes is less than 15 μm.

19. The method of claim 12 , wherein patterning the source/drain layer includes performing a photolithography process.

20. The method of claim 12 , wherein attaching the first OLET display device to the second OLET display device includes a lamination process, comprising:

aligning a first alignment mark formed in the first OLET display device with a second alignment mark formed in the second OLET display device; and

joining the first OLET display device to the second OLET display device.

Assignments (1)

Continuity (1)

References Cited (17)