Method of determining crystallinity and method of manufacturing a display device using the same
A method of determining crystallinity may include acquiring a Raman spectrum of each of samples that are crystallized, determining a first sample that exhibits a first Raman spectrum having a first Raman intensity that is largest among the Raman spectra, as an optimal sample, and determining a second sample that exhibits a second Raman spectrum having a second Raman intensity that is within a range from the first Raman intensity based on the first Raman intensity, as a first normal sample.
1. A method of determining crystallinity, the method comprising:
acquiring a Raman spectrum of each of samples that are crystallized;
determining a first sample that exhibits a first Raman spectrum having a first Raman intensity that is largest among the Raman spectra, as an optimal sample; and
determining a second sample that exhibits a second Raman spectrum having a second Raman intensity that is within a range from the first Raman intensity based on the first Raman intensity, as a first normal sample; and
determining whether a fourth sample is a defective sample relative to the first Raman spectrum of the first sample.
2. The method of claim 1 , wherein each of the samples includes silicon.
3. The method of claim 1 , wherein the samples are crystallized by irradiating lasers having different energies to the samples, respectively.
4. The method of claim 3 , wherein the lasers are excimer lasers.
5. The method of claim 1 , wherein
the acquiring of the Raman spectrum of each of the samples that are crystallized includes irradiating a Raman laser beam to each of the samples, and
the Raman laser beam is irradiated in a form of a line beam.
6. The method of claim 5 , wherein the Raman laser beam has a wavelength of about 532 nanometers.
7. The method of claim 1 , further comprising:
determining a third sample that exhibits a third Raman spectrum having a third Raman intensity that is outside the range from the first Raman intensity based on the first Raman intensity, as a preliminary normal sample.
8. The method of claim 7 , further comprising:
acquiring a full width at half maximum of each of the Raman spectra; and
determining the fourth sample that exhibits a fourth Raman spectrum having a full width at half maximum that is smaller than a full width at half maximum of the first Raman spectrum of the first sample, as the defective sample.
9. The method of claim 8 , wherein the determining of the fourth sample as the defective sample is performed on the preliminary normal sample.
10. The method of claim 8 , further comprising:
determining a fifth sample that exhibits a fifth Raman spectrum having a full width at half maximum that is greater than or equal to the full width at half maximum of the first Raman spectrum of the first sample, as a second normal sample.
11. A method of manufacturing a display device, the method comprising:
acquiring a Raman spectrum of each of samples that are crystallized by irradiating lasers having different energies to the samples, respectively;
determining a first sample that exhibits a first Raman spectrum having a first Raman intensity that is largest among the Raman spectra, as an optimal sample;
determining a second sample that exhibits a second Raman spectrum having a second Raman intensity that is within a range from the first Raman intensity based on the first Raman intensity, as a first normal sample;
determining whether a fourth sample is a defective sample relative to the first Raman spectrum of the first sample:
forming a preliminary active layer including amorphous silicon on a substrate;
forming an active layer by irradiating a laser that is selected from a laser group including a first laser crystallizing the first sample and a second laser crystallizing the second sample, to the preliminary active layer; and
forming a light emitting element on the active layer.
12. The method of claim 11 , wherein the laser is an excimer laser.
13. The method of claim 11 , wherein
the acquiring of the Raman spectrum of each of the samples that are crystallized by irradiating the lasers having the different energies includes irradiating a Raman laser beam to each of the samples, and
the Raman laser beam is irradiated in a form of a line beam.
14. The method of claim 11 , wherein each of the samples includes silicon.
15. The method of claim 11 , further comprising:
forming a thin film encapsulation layer on the light emitting element.
16. The method of claim 11 , further comprising:
forming a plurality of the preliminary active layers spaced apart from each other directly on a buffer layer directly contacting a substrate prior to the preliminary active layers being irradiated with the laser and the buffer layer extending continuously between the preliminary active layers.
17. The method of claim 11 , further comprising:
forming a gate electrode on the active layer; and
forming a source electrode and a drain electrode on the gate electrode.
18. The method of claim 17 , wherein the forming of the light emitting element on the active layer includes:
forming a pixel electrode on the source electrode and the drain electrode;
forming a middle layer on the pixel electrode; and
forming a common electrode on the middle layer.
19. The method of claim 11 , further comprising:
determining a third sample that exhibits a third Raman spectrum having a third Raman intensity that is outside the range from the first Raman intensity based on the first Raman intensity, as a preliminary normal sample;
acquiring a full width at half maximum of each of the Raman spectra; and
determining the fourth sample that exhibits a fourth Raman spectrum having a full width at half maximum that is smaller than a full width at half maximum of the first Raman spectrum of the first sample, as the defective sample.
20. The method of claim 19 , wherein the determining of the fourth sample as the defective sample is performed on the preliminary normal sample.
21. The method of claim 19 , further comprising:
determining a fifth sample that exhibits a fifth Raman spectrum having a full width at half maximum that is greater than or equal to the full width at half maximum of the first Raman spectrum of the first sample, as a second normal sample,
wherein the laser group further includes a third laser crystallizing the fifth sample.