Granted Patent B2

US 12,327,665 · App. 17/892,639 · Granted Jun 10, 2025

Inventors: Nozomi Ito (Tokyo, JP); Yorinobu Kunimune (Tokyo, JP); Kenichiro Abe (Tokyo, JP); Nobuhito Shiraishi (Tokyo, JP)

Assignee: RENESAS ELECTRONICS CORPORATION

H01C7/06H01C17/232H01C17/265H10D1/474

Abstract

Claims (30)

1. A resistor material comprising:

a plurality of crystalline phases having a positive temperature coefficient of resistance; and

an amorphous phase having a negative temperature coefficient of resistance and having a resistivity higher than each of the plurality of the crystalline phases,

wherein the resistor material consists of Cr—Si—C as constituent elements.

2. The resistor material according to claim 1 ,

wherein the amorphous phase is present among the plurality of crystalline phases and a portion in which the plurality of crystalline phases are not continuous to each other is provided.

3. The resistor material according to claim 1 ,

wherein a resistivity of the resistor material is 1.0 mΩ·cm or more and an absolute value of the temperature coefficient of resistance of the resistor material is 150 ppm/° C. or less.

4. The resistor material according to claim 1 ,

wherein each of the plurality of crystalline phases includes a chromium-silicon-based crystal, and the amorphous phase includes a chromium atom, a silicon atom, and a carbon atom.

5. The resistor material according to claim 1 , wherein, in the constituent elements, a ratio of silicon content to chromium content (Si/Cr) is larger than 2 and carbon content is 15 at % to 30 at %, in terms of the number of atoms.

6. The resistor material according to claim 5 , wherein a resistivity of the resistor material is 1.5 mΩ·cm or more.

7. The resistor material according to claim 1 , wherein an average grain size of crystals contained in the plurality of crystalline phases is 50 nm or less.

8. The resistor material according to claim 7 , wherein the average grain size of the crystals is 5 nm to 35 nm.

9. A resistor element comprising:

a resistor film configured by the resistor material according to claim 1 .

10. A method of manufacturing a resistor element, comprising:

forming a film of an amorphous material having a negative temperature coefficient of resistance so as to form part of a circuit; and

subjecting the formed film of the amorphous material to an annealing treatment, and crystallizing part of the amorphous material, thereby forming a resistor film having a plurality of crystalline phases having a positive temperature coefficient of resistance and an amorphous phase having a resistivity higher than the crystalline phase,

wherein the amorphous material consists of Cr—Si—C as constituent elements,

wherein a temperature of the annealing treatment is 500° C. to 540° C., and

wherein a period of time for the annealing treatment is 2 minutes to 30 minutes.

11. The method according to claim 10 ,

wherein, in the constituent elements, a ratio of silicon content to chromium content (Si/Cr) is larger than 2 and carbon content is 15 at % to 30 at %, in terms of the number of atoms.

12. The method according to claim 11 ,

wherein the annealing treatment is carried out such that the resistor film has a portion in which the plurality of crystalline phases are not continuous to each other due to presence of the amorphous phase among the plurality of crystalline phases.

13. The method according to claim 12 ,

wherein each of the plurality of crystalline phases includes a chromium-silicon-based crystal, and the amorphous phase includes a chromium atom, a silicon atom, and a carbon atom.

14. The method according to claim 11 ,

wherein an average grain size of crystals constituting the plurality of crystalline phases is 35 nm or less.

Assignments (1)

Priority Claims (1)

Continuity (1)

References Cited (9)