Display substrate with multiple via holes, electronic device, and method of manufacturing the display substrate
A display substrate, a method of manufacturing a display substrate, and an electronic device are provided. The display substrate includes: a base substrate; a thin film transistor arranged on the base substrate; a first planarization layer arranged on a side of the thin film transistor away from the base substrate; a first protective layer arranged on a side of the first planarization layer away from the base substrate; a first conductive layer arranged on a side of the first protective layer away from the base substrate; and a second planarization layer arranged on a side of the first conductive layer away from the base substrate, wherein the display substrate is provided with a first via hole penetrating the first protective layer, and the first planarization layer is in contact with the second planarization layer through the first via hole.
1. A display substrate, comprising:
a base substrate;
a thin film transistor arranged on the base substrate;
a first planarization layer arranged on a side of the thin film transistor away from the base substrate;
a first protective layer arranged on a side of the first planarization layer away from the base substrate;
a first conductive layer arranged on a side of the first protective layer away from the base substrate; and
a second planarization layer arranged on a side of the first conductive layer away from the base substrate, wherein the display substrate is provided with a first via hole penetrating the first protective layer, and the first planarization layer is in contact with the second planarization layer through the first via hole;
wherein the display substrate further compromises a second via hole penetrating the first protective layer and the first planarization layer, wherein the first conductive layer is electrically connected to a second conductive layer through the second via hole, the second planarization layer fills the first via hole and the second via hole, and a depth of the first via hole filled with the second planarization layer is less than a depth of the second via hole filled with the second planarization layer.
2. The display substrate of claim 1 , further comprising:
a second protective layer arranged on the side of the first conductive layer away from the base substrate and a side of the second planarization layer facing the base substrate, wherein the first via hole penetrates the first protective layer and the second protective layer.
3. The display substrate of claim 1 , wherein an orthographic projection of the first via hole on the base substrate does not overlap an orthographic projection of the first conductive layer on the base substrate.
4. The display substrate of claim 1 , wherein a width of the first via hole is less than that of the second via hole.
5. The display substrate of claim 1 , wherein a number of the first via hole is greater than that of the second via hole.
6. The display substrate of claim 1 , wherein a slope angle of the first via hole is less than that of the second via hole.
7. The display substrate of claim 1 , wherein the first conductive layer is a metal layer.
8. The display substrate of claim 1 , wherein the first conductive layer comprises:
a first metal sub-layer;
a second metal sub-layer located on a side of the first metal sub-layer away from the base substrate; and
a third metal sub-layer located on a side of the second metal sub-layer away from the base substrate.
9. An electronic device comprising the display substrate of claim 1 .
10. The display substrate of claim 8 , further comprising an anode layer arranged on a side of the second planarization layer away from the base substrate and a third via hole electrically connected to the first conductive layer, wherein the third via hole does not overlap the first via hole.
11. The display substrate of claim 10 , wherein a number of the first via hole is greater than that of the third via hole.
12. The display substrate of claim 10 , wherein, in a same pixel, an orthographic projection of the third via hole on the base substrate is located between an orthographic projection of the first via hole on the base substrate and an orthographic projection of the second via hole on the base substrate.
13. The display substrate of claim 10 , wherein an orthographic projection of the first via hole on the base substrate does not overlap an orthographic projection of the anode layer on the base substrate.
14. A method of manufacturing a display substrate, comprising:
forming a thin film transistor on a base substrate;
forming a first planarization layer on the base substrate formed with the thin film transistor;
forming a first protective layer on a side of the first planarization layer away from the base substrate;
forming a first conductive layer on a side of the first protective layer away from the base substrate; and
forming a second planarization layer on a side of the first conductive layer away from the base substrate, wherein a first via hole penetrating the first protective layer is formed, and the first planarization layer is in contact with the second planarization layer through the first via hole;
wherein the first protective layer and the first planarization layer is penetrated by a second via hole, the first conductive layer is electrically connected to a second conductive layer through the second via hole, the second planarization layer fills the first via hole and the second via hole, and a depth of the first via hole filled with the second planarization layer is less than a depth of the second via hole filled with the second planarization layer.
15. The method of claim 14 , wherein a second protective layer is formed on the side of the first conductive layer away from the base substrate after the first conductive layer is formed and before the second planarization layer is formed, at least a part of the first via hole is formed in a step of forming the second protective layer, and the first via hole penetrates the first protective layer and the second protective layer.
16. The method of claim 15 , wherein a first hollow portion of the first protective layer is formed in a step of forming the first protective layer and a second hollow portion of the second protective layer is formed in a step of forming the second protective layer, an orthographic projection of the first hollow portion on the base substrate at least partially overlaps an orthographic projection of the second hollow portion on the base substrate, and the first via hole is at least partially formed by the first hollow portion and the second hollow portion.
17. The method of claim 15 , wherein a first hollow portion of the first protective layer and a second hollow portion of the second protective layer are formed in a step of forming the second protective layer, an orthographic projection of the first hollow portion on the base substrate at least partially overlaps an orthographic projection of the second hollow portion on the base substrate, and the first via hole is at least partially formed by the first hollow portion and the second hollow portion.
18. The method of claim 17 , wherein a third hollow portion of the second protective layer is further formed, in a step of forming the second protective layer, to form a conductive via hole connected to the first conductive layer, and a part of the first conductive layer exposed from the third hollow portion is over-etched.