Granted Patent B2

US 12,332,127 · App. 18/597,341 · Granted Jun 17, 2025

Inventors: Julius Minglin Tsai (San Jose, CA); Ryan Diestelhorst (Sunnyvale, CA); Dan Krstyen Benjamin (Marietta, GA)

Assignee: NextInput, Inc.

G01L1/18B81B3/0021B81C1/00595G01L1/26B81B2203/0127B81C2201/014

Abstract

Claims (33)

1. A microelectromechanical system (MEMS) force sensor, comprising:

a sensor die configured to receive an applied force, the sensor die comprising a first substrate and a second substrate, wherein a cavity is formed in the first substrate, and wherein at least a portion of the second substrate defines a deformable membrane;

an etch stop layer arranged between the first substrate and the second substrate;

a sensing element arranged on a surface of the second substrate, wherein the sensing element is configured to convert a strain on the surface of a membrane substrate to an analog electrical signal that is proportional to the strain;

wherein the etch stop layer is configured for precise thickness control of the deformable membrane of the membrane substrate;

wherein an etch rate of the etch stop layer is different than an etch rate of the first substrate; and

wherein an etch rate ratio between the etch rate of the first substrate and the etch rate of the etch stop layer is between 50 and 150.

2. The MEMS force sensor of claim 1 , further comprising:

a protective layer arranged on the surface of the second substrate; and

a conductive pad arranged on the protective layer, wherein the sensing element is electrically coupled to the conductive pad, wherein the protective layer at least partially covers the sensing element, the surface of the second substrate, and the conductive pad.

3. The MEMS force sensor of claim 2 , further comprising an under bump metal (UBM) layer and a solder bump, wherein the MEMS force sensor is mounted on a package substrate using the UBM layer and the solder bump.

4. The MEMS force sensor of claim 3 , wherein the conductive pad, the UBM layer, and the solder bump are overlapping fully with a mesa formed from the first substrate.

5. The MEMS force sensor of claim 3 , wherein the conductive pad, the UBM layer, and the solder bump are not overlapping with a mesa formed from the first substrate or the deformable membrane defined by the second substrate.

6. The MEMS force sensor of claim 3 , wherein the conductive pad is electrically coupled to the package substrate through the UBM layer and the solder bump.

7. The MEMS force sensor of claim 3 , wherein the package substrate is a printed circuit board (PCB) or a flexible printed circuit board (FPCB).

8. The MEMS force sensor of claim 1 , further comprising a mesa formed from the first substrate.

9. The MEMS force sensor of claim 1 , wherein the etch stop layer covers the deformable membrane of the membrane substrate.

10. The MEMS force sensor of claim 1 , wherein the etch stop layer is removed from the deformable membrane of the membrane substrate.

11. The MEMS force sensor of claim 1 , wherein the etch stop layer is composed of silicon dioxide, silicon nitride, or sapphire.

12. The MEMS force sensor of claim 1 , further comprising a plurality of sensing elements arranged on the surface of the second substrate.

13. The MEMS force sensor of claim 1 , wherein the sensing element is a piezoresistive or piezoelectric sensing element.

14. The MEMS force sensor of claim 1 , further comprising a cap substrate, wherein the cap substrate is bonded to the first substrate, and wherein the cavity is sealed between the cap substrate and the first substrate.

15. A method of manufacturing a microelectromechanical system (MEMS) force sensor, the method comprising:

providing a first substrate, a second substrate, and an etch stop layer, wherein the etch stop layer is arranged between the first substrate and the second substrate, and wherein a sensing element is arranged on a surface of the second substrate;

etching the first substrate, wherein an etch process removes a portion of the first substrate to form a cavity in the first substrate;

wherein the etch stop layer is configured for precise thickness control of a deformable membrane of a membrane substrate;

wherein an etch rate of the etch stop layer is different than an etch rate of the first substrate; and

wherein an etch rate ratio between the etch rate of the first substrate and the etch rate of the etch stop layer is between 50 and 150.

16. The method of claim 15 , wherein the etch process removes a portion of the etch stop layer.

17. The method of claim 15 , wherein the etch process does not remove a portion of the second substrate.

18. The method of claim 17 , wherein the etch process further forms a mesa in the first substrate.

19. The method of claim 18 , further comprising bonding a cap substrate to the first substrate, wherein the cavity is sealed between the cap substrate and the first substrate.

20. The method of claim 15 , wherein the MEMS force sensor is provided in an integrated circuit.

Assignments (2)

Continuity (4)

References Cited (377)