IP Library › Granted Patent US 12,333,154
Granted Patent B2
US 12,333,154 · App. 18/219,023 · Granted Jun 17, 2025

Reducing bit error rate in memory devices

Inventors: Tingjun Xie (Milpitas, CA); Yang Liu (San Jose, CA); Jiangli Zhu (San Jose, CA); Juane Li (Milpitas, CA); Aaron Lee (Sunnyvale, CA)
Assignee: Micron Technology, Inc.
G06F3/0619G06F3/064G06F3/0653G06F3/0679
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Quick Facts
Patent No.
US 12,333,154
App. No.
18/219,023
Granted
Jun 17, 2025
Kind
B2
Abstract

A processing device in a memory sub-system performs a first media scan operation with respect to a plurality of memory pages addressable by the ordinary wordline, wherein each page of the plurality of memory pages is contained by a respective management unit, and responsive to determining that a value of a data state metric of a memory page of the plurality of memory page addressable by the ordinary wordline satisfies a specified condition, performs a first media management operation with respect to a management unit containing the memory page. The processing device further performs a second media scan operation with respect to a plurality of memory pages addressable by the mandatory wordline, wherein each page of the plurality of memory pages is contained by the respective management unit, and responsive to determining that a value of the data state metric of a memory page of the plurality of memory page addressable by the mandatory wordline satisfies the specified condition, performs a second media management operation with respect to the management unit containing the memory page.

Claims (44)

1. A method, comprising:

identifying, by a processing device, among a plurality of wordlines of a memory device, a first subset of ordinary wordlines and a second subset of mandatory wordlines, wherein a mandatory wordline of the second subset exhibits a first value of a data state metric that exceeds a second value of the data state metric exhibited by an ordinary wordline of the first subset;

performing a first media scan operation with respect to a plurality of memory pages addressable by the ordinary wordline, wherein each page of the plurality of memory pages is contained by a respective management unit, and wherein an order of media scan operations is based on a number of mandatory wordlines and ordinary wordlines associated with a block of a plurality of blocks associated with the memory device;

responsive to determining that a value of the data state metric of a memory page of the plurality of memory pages addressable by the ordinary wordline satisfies a specified condition, performing a first media management operation with respect to a management unit containing the memory page;

performing a second media scan operation with respect to a plurality of memory pages addressable by the mandatory wordline, wherein each page of the plurality of memory pages is contained by the respective management unit; and

responsive to determining that a value of the data state metric of a memory page of the plurality of memory pages addressable by the mandatory wordline satisfies the specified condition, performing a second media management operation with respect to the management unit containing the memory page.

2. The method of claim 1 , wherein the management unit comprises at least one of: a block or a superblock of the memory device.

3. The method of claim 1 , wherein the data state metric reflects a raw bit error rate (RBER) of the memory page.

4. The method of claim 1 , wherein the performing the first media management operation with respect to the management unit containing the memory page further comprises: relocating data stored at a block comprising the memory page to another block.

5. The method of claim 1 , wherein performing the second media management operation with respect to the management unit containing the memory page further comprises relocating data stored at a block comprising the memory page to another block.

6. The method of claim 1 , further comprising:

sequencing the first media scan operation with respect to the plurality of memory pages addressable by the ordinary wordline and the second media scan operation with respect to the plurality of memory pages addressable by the mandatory wordline.

7. The method of claim 6 , further comprising:

performing the second media scan operation a higher number of times compared to the first media scan operation.

8. A system comprising:

a memory device; and

a processing device, operatively coupled with the memory device, to perform operations comprising:

identifying among a plurality of wordlines of a memory device, a first subset of ordinary wordlines and a second subset of mandatory wordlines, wherein a mandatory wordline of the second subset exhibits a first value of a data state metric that exceeds a second value of the data state metric exhibited by an ordinary wordline of the first subset;

performing a first media scan operation with respect to a plurality of memory pages addressable by the ordinary wordline, wherein each page of the plurality of memory pages is contained by a respective management unit, and wherein an order of media scan operations is based on a number of mandatory wordlines and ordinary wordlines associated with a block of a plurality of blocks associated with the memory device;

responsive to determining that a value of the data state metric of a memory page of the plurality of memory pages addressable by the ordinary wordline satisfies a specified condition, performing a first media management operation with respect to a management unit containing the memory page;

performing a second media scan operation with respect to a plurality of memory pages addressable by the mandatory wordline, wherein each page of the plurality of memory pages is contained by the respective management unit; and

responsive to determining that a value of the data state metric of a memory page of the plurality of memory pages addressable by the mandatory wordline satisfies the specified condition, performing a second media management operation with respect to the management unit containing the memory page.

9. The system of claim 8 , wherein the management unit comprises at least one of: a block or a superblock of the memory device.

10. The system of claim 8 , wherein determining that the value of the data state metric of the memory page of the plurality of memory pages addressable by the ordinary wordline satisfies the specified condition further comprises determining that a raw bit error rate (RBER) of the memory page of the plurality of memory pages addressable by the ordinary wordline is above a predetermined threshold.

11. The system of claim 8 , wherein the performing the first media management operation with respect to the management unit containing the memory page further comprises relocating data stored at a block comprising the memory page to another block.

12. The system of claim 8 , wherein the determining that the value of the data state metric of the memory page of the plurality of memory pages addressable by the mandatory wordline satisfies the specified condition further comprises determining that a raw bit error rate (RBER) of the memory page of the plurality of memory pages addressable by the mandatory wordline is above a predetermined threshold.

13. The system of claim 8 , wherein performing the second media management operation with respect to the management unit containing the memory page further comprises relocating data stored at a block comprising the memory page to another block.

14. The system of claim 8 , wherein the operations further comprise:

sequencing the first media scan operation with respect to the plurality of memory pages addressable by the ordinary wordline and the second media scan operation with respect to the plurality of memory pages addressable by the mandatory wordline; and

performing the second media scan operation a higher number of times compared to the first media scan operation.

15. A non-transitory computer-readable storage medium comprising instructions that, when executed by a processing device, cause the processing device to perform operations comprising:

identifying an ordinary wordline of a memory device;

performing a first media scan operation with respect to a plurality of memory pages addressable by the ordinary wordline, wherein each page of the plurality of memory pages is contained by a respective management unit;

responsive to determining that a value of a data state metric of a memory page of the plurality of memory page addressable by the ordinary wordline satisfies a specified condition, performing a first media management operation with respect to a management unit containing the memory page;

identifying a mandatory wordline of the memory device;

performing a second media scan operation with respect to a plurality of memory pages addressable by the mandatory wordline, wherein each page of the plurality of memory pages is contained by the respective management unit, and wherein an order of media scan operations is based on a number of mandatory wordlines and ordinary wordlines associated with a block of a plurality of blocks associated with the memory device; and

responsive to determining that a value of the data state metric of a memory page of the plurality of memory page addressable by the mandatory wordline satisfies the specified condition, performing a second media management operation with respect to the management unit containing the memory page.

16. The non-transitory computer-readable storage medium of claim 15 , wherein determining that the value of the data state metric of the memory page of the plurality of memory pages addressable by the ordinary wordline satisfies the specified condition further comprises determining that a raw bit error rate (RBER) of the memory page of the plurality of memory pages addressable by the ordinary wordline is above a predetermined threshold.

17. The non-transitory computer-readable storage medium of claim 15 , wherein performing the first media management operation with respect to the management unit containing the memory page further comprises relocating data stored at a block comprising the memory page to another block.

18. The non-transitory computer-readable storage medium of claim 15 , wherein determining that the value of the data state metric of the memory page of the plurality of memory pages addressable by the mandatory wordline satisfies the specified condition further comprises determining that a raw bit error rate (RBER) of the memory page of the plurality of memory pages addressable by the mandatory wordline is above a predetermined threshold.

19. The non-transitory computer-readable storage medium of claim 15 , wherein performing the second media management operation with respect to the management unit containing the memory page further comprises relocating data stored at a block comprising the memory page to another block.

20. The non-transitory computer-readable storage medium of claim 15 , wherein the operations further comprise:

sequencing the first media scan operation with respect to the plurality of memory pages addressable by the ordinary wordline with the second media scan operation with respect to the plurality of memory pages addressable by the mandatory wordline; and

performing the second media scan operation a higher number of times compared to the first media scan operation.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 6, 2023
From: XIE, TINGJUN; LIU, YANG; ZHU, JIANGLI; LI, JUANE; LEE, AARON
To: MICRON TECHNOLOGY, INC.
Reel/Frame 064175/0370 →
Continuity (2)
Provisional Application 63402406 · Aug 30, 2022
Related Publication 20240069748A1 · Feb 29, 2024
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