Differential strobe fault indication

1. A method, comprising:

receiving, at a memory device, one or more commands to perform one or more operations on a memory array of the memory device;

determining, at the memory device, a fault associated with performing the one or more operations;

indicating, by the memory device, a plurality of clock cycles for outputting data associated with a first command of the one or more commands using a first read strobe signal of a set of read strobe signals; and

indicating, by the memory device, the fault using a second read strobe signal of the set of read strobe signals, wherein the fault is indicated according to a timeout duration that is based at least in part on a characteristic of the fault.

2. The method of claim 1 , further comprising:

receiving, prior to indicating the plurality of clock cycles for outputting the data, an indication that the memory device is configured to use the first read strobe signal in a single-ended mode.

3. The method of claim 1 , wherein the one or more commands comprise a write command, the method further comprising:

detecting an error associated with performing the write command, wherein determining the fault is based at least in part on detecting the error;

outputting one or more parity bits over a duration using the first read strobe signal based at least in part on the write command; and

indicating the error using the second read strobe signal during the duration, wherein indicating the fault is based at least in part on indicating the error.

4. The method of claim 1 , further comprising:

outputting, using the second read strobe signal, a voltage level for the plurality of clock cycles, wherein the fault is indicated based at least in part on the voltage level.

5. The method of claim 1 , further comprising:

toggling the first read strobe signal between a first voltage level and a second voltage level according to a first periodicity, wherein indicating the plurality of clock cycles for outputting data is based at least in part on toggling the first read strobe signal; and

toggling the second read strobe signal between the first voltage level and the second voltage level according to a second periodicity, wherein the fault is indicated based at least in part on a difference between the first periodicity and the second periodicity.

6. The method of claim 1 , further comprising:

toggling the first read strobe signal between a first voltage level and a second voltage level according to a first periodicity, wherein indicating the plurality of clock cycles for outputting data is based at least in part on toggling the first read strobe signal; and

toggling the second read strobe signal between the first voltage level and the second voltage level according to the first periodicity, wherein the fault is indicated based at least in part on the second read strobe signal being in phase with the first read strobe signal according to the first periodicity.

7. The method of claim 1 , further comprising:

outputting, using the first read strobe signal, a first voltage level for the plurality of clock cycles; and

outputting, using the second read strobe signal, a second voltage level for the plurality of clock cycles, wherein the fault is indicated based at least in part on a difference between the first voltage level and the second voltage level.

8. A method, comprising:

transmitting, to a memory device, one or more commands to perform one or more operations on a memory array of the memory device;

identifying a plurality of clock cycles for receiving data from the memory device associated with a first command of the one or more commands based at least in part on a first read strobe signal of a set of read strobe signals;

identifying a fault based at least in part on a second read strobe signal of the set of read strobe signals from the memory device, the fault associated with performing the one or more operations; and

identifying a characteristic of the fault based at least in part on a timeout duration associated with the second read strobe signal.

9. The method of claim 8 , further comprising:

transmitting, prior to identifying the plurality of clock cycles for outputting the data, an indication that the memory device is configured to use the first read strobe signal in a single-ended mode.

10. The method of claim 8 , wherein the one or more commands comprise a write command, the method further comprising:

identifying, based at least in part on the first read strobe signal, one or more parity bits over a duration based at least in part on the write command; and

identifying, based at least in part on the second read strobe signal and during the duration, an error associated with the write command, wherein identifying the fault is based at least in part on identifying the error.

11. The method of claim 8 , further comprising:

identifying that the second read strobe signal outputs a voltage level for the plurality of clock cycles, wherein the fault is identified based at least in part on the voltage level.

12. The method of claim 8 , further comprising:

identifying that the first read strobe signal toggles between a first voltage level and a second voltage level according to a first periodicity, wherein identifying the plurality of clock cycles for receiving data is based at least in part on identifying the toggling of the first read strobe signal; and

identifying that the second read strobe signal toggles between the first voltage level and the second voltage level according to a second periodicity, wherein the fault is identified based at least in part on a difference between the first periodicity and the second periodicity.

13. The method of claim 8 , further comprising:

identifying that the first read strobe signal toggles between a first voltage level and a second voltage level according to a first periodicity, wherein identifying the plurality of clock cycles for receiving data is based at least in part on identifying the toggling of the first read strobe signal; and

identifying that the second read strobe signal toggles between the first voltage level and the second voltage level according to the first periodicity, wherein the fault is identified based at least in part on the second read strobe signal being in phase with the first read strobe signal according to the first periodicity.

14. The method of claim 8 , further comprising:

identifying that the first read strobe signal outputs a first voltage level for the plurality of clock cycles; and

identifying that the second read strobe signal outputs a second voltage level for the plurality of clock cycles, wherein the fault is identified based at least in part on a difference between the first voltage level and the second voltage level.

15. A memory system, comprising:

one or more controllers associated with one or more memory devices, wherein the one or more controllers is configured to cause the memory system to:

receive, at the one or more memory devices, one or more commands to perform one or more operations on a memory array of the one or more memory devices;

determine, at the one or more memory devices, a fault associated with performing the one or more operations;

indicate, by the one or more memory devices, a plurality of clock cycles for outputting data associated with a first command of the one or more commands using a first read strobe signal of a set of read strobe signals; and

indicate, by the one or more memory devices, the fault using a second read strobe signal of the set of read strobe signals, wherein the fault is indicated according to a timeout duration that is based at least in part on a characteristic of the fault.

16. The memory system of claim 15 , wherein the one or more controllers is further configured to cause the memory system to:

receive, prior to indicating the plurality of clock cycles for outputting the data, an indication that the one or more memory devices is configured to use the first read strobe signal in a single-ended mode.

17. The memory system of claim 15 , wherein:

the one or more commands comprise a write command; and

the one or more controllers is further configured to cause the memory system to:

detect an error associated with performing the write command, wherein determining the fault is based at least in part on detecting the error;

output one or more parity bits over a duration using the first read strobe signal based at least in part on the write command; and

indicate the error using the second read strobe signal during the duration, wherein indicating the fault is based at least in part on indicating the error.

18. The memory system of claim 15 , wherein the one or more controllers is further configured to cause the memory system to:

output, using the second read strobe signal, a voltage level for the plurality of clock cycles, wherein the fault is indicated based at least in part on the voltage level.

19. The memory system of claim 15 , wherein the one or more controllers is further configured to cause the memory system to:

toggle the first read strobe signal between a first voltage level and a second voltage level according to a first periodicity, wherein indicating the plurality of clock cycles for outputting data is based at least in part on toggling the first read strobe signal; and

toggle the second read strobe signal between the first voltage level and the second voltage level according to a second periodicity, wherein the fault is indicated based at least in part on a difference between the first periodicity and the second periodicity.

20. The memory system of claim 15 , wherein the one or more controllers is further configured to cause the memory system to:

toggle the first read strobe signal between a first voltage level and a second voltage level according to a first periodicity, wherein indicating the plurality of clock cycles for outputting data is based at least in part on toggling the first read strobe signal; and

toggle the second read strobe signal between the first voltage level and the second voltage level according to the first periodicity, wherein the fault is indicated based at least in part on the second read strobe signal being in phase with the first read strobe signal according to the first periodicity.

21. The memory system of claim 15 , wherein the one or more controllers is further configured to cause the memory system to:

output, using the first read strobe signal, a first voltage level for the plurality of clock cycles; and

output, using the second read strobe signal, a second voltage level for the plurality of clock cycles, wherein the fault is indicated based at least in part on a difference between the first voltage level and the second voltage level.

22. A memory system, comprising:

one or more controllers associated with one or more memory devices, wherein the one or more controllers is configured to cause the memory system to:

transmit, to the one or more memory devices, one or more commands to perform one or more operations on a memory array of the one or more memory devices;

identify a plurality of clock cycles for receiving data from the one or more memory devices associated with a first command of the one or more commands based at least in part on a first read strobe signal of a set of read strobe signals;

identify a fault based at least in part on a second read strobe signal of the set of read strobe signals from the one or more memory devices, the fault associated with performing the one or more operations; and

identify a characteristic of the fault based at least in part on a timeout duration associated with the second read strobe signal.