IP Library › Granted Patent US 12,334,180
Granted Patent B2
US 12,334,180 · App. 17/938,780 · Granted Jun 17, 2025

Memory module and memory system having the same

Inventors: Kyudong Lee (Seoul, KR); Young Yun (Yongin-si, KR); Sungjoo Park (Anyang-si, KR); Jinseong Yun (Suwon-si, KR)
Assignee: Samsung Electronics Co., Ltd.
G11C5/147
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Quick Facts
Patent No.
US 12,334,180
App. No.
17/938,780
Granted
Jun 17, 2025
Kind
B2
Abstract

A memory module includes a serial presence detector (SPD) configured to detect a module identification (ID) through at least one module position identification terminal, and generate at least one of the module ID and a register address corresponding to the module ID. A power management unit (PMU) is responsive to at least one of the module ID and the register address generated by the SPD. The PMU is configured to set an on-time point and/or an off-time point of an internal clock signal based on at least one of the module ID and the register address corresponding to the module ID, and further configured to generate at least one internal power supply voltage in response to the internal clock signal. A plurality of memory devices are also provided, which are configured to receive the at least one internal power supply voltage and perform an operation in response to command/address signals.

Claims (50)

1. An operating method of a memory module, comprising:

generating position data related to a corresponding module slot of a main board by a serial presence detector when the memory module is inserted into the corresponding module slot of the main board;

transferring the position data to a power management integrated circuit using serial data and a serial clock signal of the corresponding module slot;

generating a frequency offset code in response to the position data by the power management integrated circuit;

adjusting a switching frequency of an internal clock signal according to the frequency offset code;

operating a first voltage regulator of the power management integrated circuit at a first switching frequency of the internal clock signal; and

operating a second voltage regulator of the power management integrated circuit at a second switching frequency of the internal clock signal,

wherein the first switching frequency and the second switching frequency are different.

2. The method of claim 1 , wherein the serial presence detector generates the position data by recognizing a position of the corresponding module slot.

3. The method of claim 2 , wherein the corresponding module slot includes a resistor connected to a terminal connected to the serial present detector,

wherein the generating the position data includes:

recognizing a value of the resistor in the serial present detector; and

generating the position data according to the value of the resistor.

4. The method of claim 1 , further comprising,

generating an internal voltage in each of the first voltage regulator and the second voltage regulator in response to the internal clock signal.

5. The method of claim 4 , wherein the each one of the first voltage regulator and the second voltage regulator is activated in response to the internal clock signal and generates the internal voltage using an external power supply voltage.

6. The method of claim 5 , wherein the first voltage regulator and the second voltage regulator generate different internal voltages in response to the internal clock signal.

7. The method of claim 1 , wherein the adjusting the switching frequency of the internal clock signal includes:

generating the internal clock signal in an internal clock signal generator of in the power management integrated circuit; and

adjusting the internal clock signal in the internal clock signal generator according to the frequency offset code.

8. The method of claim 1 , further comprising, storing the frequency offset code in a register of in the power management integrated circuit.

9. The method of claim 1 , wherein the serial present detector transfers the position data to the power management integrated circuit through an I2C/I3C communication.

10. The method of claim 1 , wherein the frequency offset code corresponds to an identification number of module slots of the main board.

11. A memory module comprising:

a serial presence detector configured to generate position data related to a corresponding module slot of a main board when the memory module is inserted into the corresponding module slot of the main board;

a power management integrated circuit configured to receive the position data from the serial presence detector, to generate a frequency offset code in response to the position data, to adjust a switch frequency of an internal clock signal according to the frequency offset code, to operate a first voltage regulator at a first switching frequency of the internal clock signal; and

to operate a second voltage regulator at a second switching frequency of the internal clock signal; and

a plurality of memory devices configured to receive at least one internal power from the first voltage regulator and the second voltage regulator and to perform an operation in response to command/address signals,

wherein the first switching frequency and the second switching frequency are different.

12. The memory module of claim 11 , further comprising at least one module position identification terminal, wherein the serial presence detector detects a passive element connected to the at least module position and generates the position data.

13. The memory module of claim 11 , wherein the power management integrated circuit includes a register configured to store the frequency offset code.

14. The memory module of claim 11 , wherein the power management integrated circuit includes an internal clock signal generator configured to generate the internal signal having an on-time point or an off-time point set in response to the frequency offset code corresponding to the position data.

15. The memory module of claim 11 , further comprising:

a temperature sensor communicatively coupled to the power management integrated circuit; and

a register clock driver communicatively coupled to the power management integrated circuit,

wherein the resister clock driver receives and transmits the command/address signals to the plurality of the memory devices.

16. A memory system comprising:

a main board having a plurality of module slots;

a plurality of memory modules mounted in the plurality of module slots, respectively; and

a controller configured to control the plurality of memory modules,

wherein each of the plurality of memory modules includes a voltage regulator configured to receive an external power supply voltage and to generate an internal power supply in response to an internal clock signal,

wherein the each of the plurality of memory modules adjusts a switching frequency of the internal clock signals according to position data related to a corresponding module slot of the main board;

wherein switching frequencies of voltage regulators are not same.

17. The memory system of claim 16 ,

wherein the controller generates the position data, which is transferred to the plurality of memory modules, respectively, and

wherein the position data includes a module identification number.

18. The memory system of claim 16 , wherein the each of the plurality of memory module detects a voltage or a current of a module position identification terminal and generates the position data according to the detected voltage or the detected current.

19. The memory system of claim 16 , wherein the each of plurality of memory modules includes a power management integrated circuit having the voltage regulator,

wherein the power management integrated circuit generates a frequency offset code corresponding to the position data and adjust the internal clock signal in response to the frequency offset code.

20. The memory system of claim 16 , wherein the each of the plurality of the memory modules includes a serial present detector configured to generate the position data by detecting a passive element when the each of the plurality of memory modules inserted into corresponding module slot of the main board.

Priority Claims (2)
KR 10-2019-0047980 · Apr 24, 2019 · national
KR 10-2019-0090970 · Jul 26, 2019 · national
Continuity (2)
Continuation 16709984 · Dec 11, 2019
Related Publication 20230035640A1 · Feb 2, 2023
References Cited (32)
US 3513400A · Russell · 1970 [cited by applicant]
US 7876592B2 · Berke · 2011 [cited by applicant]
US 7921256B2 · Im · 2011 [cited by applicant]
US 8055922B2 · Brittain et al. · 2011 [cited by applicant]
US 8930740B2 · Zerbe et al. · 2015 [cited by applicant]
US 9627028B2 · Mera et al. · 2017 [cited by applicant]
US 9703354B2 · Lee et al. · 2017 [cited by applicant]
US 20020060948A1 · Chang · 2002 [cited by examiner]
US 20050138267A1 · Bains et al. · 2005 [cited by applicant]
US 20060009933A1 · Sutardja · 2006 [cited by examiner]
US 20080259553A1 · Hsu · 2008 [cited by examiner]
US 20090015227A1 · Wong et al. · 2009 [cited by applicant]
US 20090200995A1 · Tran et al. · 2009 [cited by applicant]
US 20100064099A1 · Nishtala et al. · 2010 [cited by applicant]
US 20100138684A1 · Kim et al. · 2010 [cited by applicant]
US 20140219044A1 · Shin et al. · 2014 [cited by applicant]
US 20150228358A1 · Agata et al. · 2015 [cited by applicant]
US 20180059933A1 · Helmick et al. · 2018 [cited by applicant]
US 20180260345A1 · Jung · 2018 [cited by applicant]
US 20190065074A1 · Lee et al. · 2019 [cited by applicant]
US 20190103801A1 · Venkataraman et al. · 2019 [cited by applicant]
US 20190115053A1 · Park et al. · 2019 [cited by applicant]
US 20190188165A1 · Venkatraman et al. · 2019 [cited by applicant]
US 20210004336A1 · Liu · 2021 [cited by examiner]
CN 109427373A · 2019 [cited by applicant]
CN 109671464A · 2019 [cited by applicant]
CN 107785044B · 2021 [cited by applicant]
JP 5915764B2 · 2016 [cited by applicant]
KR 100842403B1 · 2008 [cited by applicant]
KR 101654487B1 · 2016 [cited by applicant]
KR 20180102268A · 2018 [cited by applicant]
“DDR4 SDRAM Registered DIMM Design Specification, JEDEC Standard No. 21C, Revision 1.00 (Sep. 2014)”. [cited by applicant]