Method for controlling temperature of chips and related chips
A method for controlling a memory system is disclosed. For example, the method can include performing an operation on a memory device of the memory system, calculating a remaining payload based on a current total payload and a payload associated with the operation performed on the memory device, and when the remaining payload meets a predefined requirement, measuring a current temperature of the memory device and setting the current total payload associated with the current temperature for the memory device.
1. A method for controlling a memory system comprises a memory device, comprising:
performing an operation on the memory device;
calculating a remaining payload based on a current total payload and a payload associated with the operation performed on the memory device; and
when the remaining payload meets a predefined requirement, measuring a current temperature of the memory device and setting the current total payload associated with the current temperature of the memory device.
2. The method of claim 1 , wherein when the remaining payload meets the predefined requirement, the method further comprises starting counting a predefined amount of time, and
wherein when the remaining payload meets the predefined requirement, the method performs measuring the current temperature of the memory device, setting the current total payload associated with the current temperature of the memory device and starting counting the predefined amount of time when the predefined amount of time is elapsed, or stopping transferring data to and/or from the memory device until the predefined amount of time is elapsed and measuring the current temperature of the memory device, setting the current total payload associated with the current temperature of the memory device and starting counting the predefined amount of time when the predefined amount of time is elapsed.
3. The method of claim 2 , further comprising:
when the remaining payload does not meet the predefined requirement, performing another operation on the memory device when the predefined amount of time is not elapsed, or measuring the current temperature of the memory device, setting the current total payload associated with the current temperature of the memory device and starting counting the predefined amount of time when the predefined amount of time is elapsed.
4. The method of claim 1 , wherein the remaining payload is calculated by subtracting from the current total payload the payload associated with the operation performed on the memory device.
5. The method of claim 1 , wherein the current total payload associated with the current temperature of the memory device is set based on a temperature range-current total payload relation corresponding to the memory device.
6. The method of claim 1 , wherein the predefined requirement requires that the remaining payload is less than zero.
7. A non-transitive computer readable storage medium having instructions stored therein, which, when executed by a processor, causes the processor to perform a method for controlling a memory system comprises a memory device, the method comprising:
performing an operation on the memory device;
calculating a remaining payload based on a current total payload and a payload associated with the operation performed on the memory device; and
when the remaining payload meets a predefined requirement, measuring a current temperature of the memory device and setting the current total payload associated with the current temperature of the memory device.
8. The non-transitive computer readable storage medium of claim 7 , wherein when the remaining payload meets the predefined requirement, the method further comprises starting counting a predefined amount of time, and
wherein when the remaining payload meets the predefined requirement, the method performs measuring the current temperature of the memory system, setting the current total payload associated with the current temperature of the memory system and starting counting the predefined amount of time when the predefined amount of time is elapsed, or stopping transferring data to and/or from the memory device until the predefined amount of time is elapsed and measuring the current temperature of the memory system, setting the current total payload associated with the current temperature of the memory system and starting counting the predefined amount of time when the predefined amount of time is elapsed.
9. The non-transitive computer readable storage medium of claim 8 , further comprising:
when the remaining payload does not meet the predefined requirement, performing another operation on the memory device when the predefined amount of time is not elapsed, or measuring the current temperature of the memory device, setting the current total payload associated with the current temperature of the memory device and starting counting the predefined amount of time when the predefined amount of time is elapsed.
10. The non-transitive computer readable storage medium of claim 7 , wherein the remaining payload is calculated by subtracting from the current total payload the payload associated with the operation performed on the memory device.
11. The non-transitive computer readable storage medium of claim 7 , wherein the current total payload associated with the current temperature of the memory device is set based on a temperature range-current total payload relation corresponding to the memory device.
12. The non-transitive computer readable storage medium of claim 7 , wherein the predefined requirement requires that the remaining payload is less than zero.
13. A memory system, comprising:
a memory device configured to store data;
a temperature sensor configured to measure a current temperature of the memory device; and
a memory controller coupled to the memory device and the temperature sensor, the memory controller configured to set a current total payload associated with the current temperature of the memory device, and perform an operation on the memory device and calculate a remaining payload based on the current total payload and a payload associated with the operation performed on the memory device,
wherein when the remaining payload meets a predefined requirement the memory controller sets the current total payload associated with the current temperature of the memory device.
14. The memory system of claim 13 , further comprising:
a timer coupled to the memory controller, the timer being configured to count a predefined amount of time,
wherein the memory controller is further configured to control the timer to start counting the predefined amount of time when setting the current total payload associated with the current temperature of the memory device, and
when the remaining payload meets the predefined requirement, the memory controller sets the current total payload associated with the current temperature of the memory device when the predefined amount of time is elapsed, or stops transferring data to and/or from the memory device until the predefined amount of time is elapsed and sets the current total payload associated with the current temperature of the memory device and controls the timer to start counting the predefined amount of time.
15. The memory system of claim 14 , wherein the memory controller is further configured to, when the remaining payload does not meet the predefined requirement, perform another operation on the memory device and calculate the remaining payload based on the current total payload and another payload associated with the another operation performed on the memory device when the predefined amount of time is not elapsed, or set the current total payload associated with the current temperature of the memory device and control the timer to start counting the predefined amount of time when the predefined amount of time is elapsed.
16. The memory system of claim 13 , wherein the memory controller calculates the remaining payload by subtracting from the current total payload the payload associated with the operation performed on the memory device.
17. The memory system of claim 13 , wherein the memory controller sets the current total payload associated with the current temperature of the memory device based on a temperature range-current total payload relation.
18. The memory system of claim 13 , wherein the predefined requirement requires that the remaining payload is less than zero.
19. The memory system of claim 13 , wherein the memory device includes an memory cell of single-level cells (SLCs) or multi-level cells (MLCs) that are programmable to assume a plurality of nominal storage values.
20. The memory system of claim 19 , wherein the operation comprises a single-level cell (SLC) read operation, an SLC write operation, an SLC erase operation, a multi-level cell (MLC) read operation, a MLC write operation or a MLC erase operation.