Granted Patent B2

US 12,334,347 · App. 17/995,547 · Granted Jun 17, 2025

Inventors: François-Xavier Darras (Apprieu, FR); Vincent Larrey (Grenoble, FR)

Assignees: Commissariat A L'énergie Atomique Et Aux Énergies Alternatives; Soitec

H01L21/187H01L21/02002H01L21/304H01L21/7806

Abstract

Claims (38)

1. A detachable structure for transferring or handling layers, comprising:

at least two interfaces including an assembly interface and a favored-detachment interface;

a receiver substrate;

a donor substrate comprising a working layer to be transferred, the working layer disposed on an initial substrate;

the favored-detachment interface being situated between the working layer and the initial substrate, and the assembly interface being situated between the working layer and the receiver substrate;

wherein:

the assembly interface has an assembly-interruption zone comprising at least one cavity present in the receiver substrate or in the working layer, if in the working layer, the depth of the cavity being strictly less than a thickness of the working layer,

the assembly-interruption zone is located in a peripheral region of the detachable structure and does not extend along the entire perimeter of the detachable structure, the assembly-interruption zone allowing a stress field at a head of a wave front of a separation wave to be modified when this wave is initiated in the assembly interface to transfer or handle the working layer.

2. The detachable structure of claim 1 , wherein the assembly-interruption zone is situated at less than 10 mm from the edges of the detachable structure.

3. The detachable structure of claim 1 , wherein the assembly-interruption zone extends over a length, along the perimeter of the detachable structure, less than or equal to 20 mm.

4. The detachable structure of claim 1 , wherein the at least one cavity has a depth between 0.5 micron and 50 microns.

5. The detachable structure of claim 1 , wherein the at least one cavity has, in a plane parallel to the assembly interface, a perimeter that is square, rectangular, triangular, trapezoidal or rounded.

6. The detachable structure of claim 5 , wherein at least one rectilinear segment of the perimeter of the at least one cavity is parallel to a detachment edge of the detachable structure or to a tangent to a detachment edge of the detachable structure.

7. The detachable structure of claim 5 , wherein a rectilinear segment of the perimeter of the at least one cavity, which has a greatest lateral dimension, is parallel to a detachment edge of the detachable structure or to a tangent to a detachment edge of the detachable structure.

8. The detachable structure of claim 1 , wherein the assembly-interruption zone comprises a plurality of cavities, the cavities being spaced apart by a distance between 1 micron and 1 mm.

9. The detachable structure of claim 8 , wherein a percentage of contact zones, between the cavities of the assembly-interruption zone, is less than 80%.

10. The detachable structure of claim 8 , wherein the cavities are aligned along a straight line or along a curved line of which a convexity is directed toward a center of the detachable structure.

11. The detachable structure of claim 1 , wherein the assembly-interruption zone is positioned at less than 8 mm from the edges of the detachable structure.

12. The detachable structure of claim 1 , wherein the working layer has a thickness between 200 nm and 200 microns.

13. The detachable structure of claim 1 , wherein:

the favored-detachment interface has a first interfacial surface energy;

the assembly interface has a second interfacial surface energy;

a difference in interfacial surface energy between the favored-detachment interface and the assembly interface is greater than or equal to 1000 mJ/m 2 .

14. The detachable structure of claim 1 , wherein the favored-detachment interface is a molecular adhesion bonding interface having a first bonding energy, and the assembly interface is a molecular adhesion bonding interface having a second bonding energy, the first bonding energy being less than the second bonding energy.

15. The detachable structure of claim 14 , wherein the difference in bonding energy between the favored-detachment interface and the assembly interface is at least on the order of 1000 mJ/m 2 .

16. A process for transferring a working layer from a donor substrate to a receiver substrate, comprising:

providing a detachable structure according to claim 1 ;

applying a mechanical stress to a detachment edge of the detachable structure, the detachment edge located as close as possible to the assembly-interruption zone, the mechanical stress being sufficient to initiate a separation wave at the assembly interface or at the favored-detachment interface;

wherein, if the initiation of the separation wave occurs at the assembly interface, deflecting the separation wave into the favored-detachment interface when the separation wave passes the assembly-interruption zone; and

propagating the separation wave at the favored-detachment interface to result in complete separation of the detachable structure.

17. The process of claim 16 , further comprising applying the mechanical stress in such a way that the direction of propagation of the separation wave is perpendicular to at least one rectilinear segment of a perimeter of the at least one cavity of the assembly-interruption zone.

18. The process of claim 16 , further comprising applying the mechanical stress in such a way that the direction of propagation of the separation wave is perpendicular to a rectilinear segment of a perimeter of the at least one cavity having the greatest lateral dimension.

19. The process of claim 16 , further comprising applying the mechanical stress by inserting a bevel-edged tool between the edges of the receiver substrate and the edges of the donor substrate.

20. The process of claim 16 , wherein providing the detachable structure comprises:

providing the donor substrate comprising the working layer disposed on the initial substrate, the favored-detachment interface being disposed between the working layer and the initial substrate;

providing a receiver substrate;

forming at least one cavity opening onto a face to be assembled, belonging to the receiver substrate, or onto a face to be assembled, belonging to the working layer, in a peripheral region of the receiver substrate or of the working layer; and

assembling the working layer and the receiver substrate together at their respective faces to be assembled.

Assignments (2)

Priority Claims (1)

Continuity (1)

References Cited (13)