IP Library › Granted Patent US 12,334,920
Granted Patent B2
US 12,334,920 · App. 18/517,890 · Granted Jun 17, 2025

Level shifter

Inventors: Jung-Tsun Chuang (Tainan, TW); Shao-Chang Huang (Hsinchu, TW); Li-Fan Chen (Hsinchu, TW); Chun-Chih Chen (New Taipei, TW); Gong-Kai Lin (Yilan County, TW); Chien-Wei Wang (Taoyuan, TW)
Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
H03K19/018521
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Quick Facts
Patent No.
US 12,334,920
App. No.
18/517,890
Granted
Jun 17, 2025
Kind
B2
Abstract

A level shifter includes a level shifting circuit and a voltage tracking circuit. The level shifting circuit receives an input signal through an input terminal and converts the input signal from a first power domain to a second power domain to generate an output signal at an output terminal. The voltage tracking circuit is coupled to first and second voltage terminals, and tracks one with a lower level among voltages of the first and second voltage terminals to generate a control voltage. The level shifting circuit includes first and second N-type transistors. The first N-type transistor has a gate coupled to the input terminal, a drain coupled to a first node, and a source coupled to a ground. The second N-type transistor has a gate receiving the control voltage, a drain coupled to the output terminal at a second node, and a source coupled to the input terminal.

Claims (34)

1. A level shifter, comprising:

a level shifting circuit receiving an input signal through an input terminal and converting the input signal from a first power domain to a second power domain to generate an output signal at an output terminal; and

a voltage tracking circuit, coupled to a first voltage terminal and a second voltage terminal, tracking one with a lower level among a first voltage of the first voltage terminal and a second voltage of the second voltage terminal to generate a control voltage,

wherein the level shifting circuit comprises:

a first N-type transistor comprising a gate coupled to the input terminal, a drain coupled to a first node, and a source coupled to a ground; and

a second N-type transistor comprising a gate receiving the control voltage, a drain coupled to the output terminal at a second node, and a source coupled to the input terminal.

2. The level shifter as claimed in claim 1 , wherein all transistors in the voltage tracking circuit are N-type transistors.

3. The level shifter as claimed in claim 1 , wherein the voltage tracking circuit comprises:

a third N-type transistor comprising a gate coupled to the second voltage terminal at a third node, a drain coupled to the first voltage terminal at a fourth node, and a source coupled to a fifth node; and

a fourth N-type transistor comprising a gate coupled to the fourth node, a drain coupled to the third node, and a source coupled to the fifth node,

wherein the gate of the second N-type transistor is coupled to the fifth node, and the control voltage is generated at the fifth node.

4. The level shifter as claimed in claim 1 further comprising:

a first P-type transistor comprising a gate coupled to the second node, a source coupled to the second voltage terminal, and a drain coupled to the first node; and

a second P-type transistor comprising a gate coupled to the first node, a source coupled to the second voltage terminal, and a drain coupled to the second node.

5. The level shifter as claimed in claim 4 , further comprising:

a third P-type transistor comprising a gate and a source coupled to the second voltage terminal, and a drain coupled to the second node.

6. The level shifter as claimed in claim 1 , wherein the first voltage terminal receives a first power voltage of the first power domain as the first voltage, the second voltage terminal receives a second power voltage of the second power domain as the second voltage, and the first voltage is lower than the second voltage.

7. The level shifter as claimed in claim 6 , wherein the input signal is provided from the first power domain.

8. The electrostatic discharge protection circuit level shifter as claimed in claim 1 , wherein the first voltage terminal receives a turned-off voltage corresponding to a turned-off state of the first power domain as the first voltage, the second voltage terminal receives a power voltage of the second power domain as the second voltage, and the first voltage is lower than the second voltage.

9. The level shifter as claimed in claim 8 , wherein the input signal is on a level of 0 volts.

10. The level shifter as claimed in claim 1 , wherein the first voltage terminal receives a first power voltage of the first power domain as the first voltage, the second voltage terminal receives a turned-off voltage corresponding to a turned-off state of the second power domain as the second voltage, and the second voltage is lower than the first voltage.

11. The level shifter as claimed in claim 10 , wherein the input signal is provided from the first power domain.

12. The level shifter as claimed in claim 1 wherein the level shifting circuit further comprises:

a first P-type transistor comprising a gate, a source coupled to the second voltage terminal, and a drain coupled to the output terminal at the second node.

13. The level shifter as claimed in claim 12 , wherein all transistors in the voltage tracking circuit are N-type transistors.

14. The level shifter as claimed in claim 12 , wherein the voltage tracking circuit comprises:

a third N-type transistor comprising a gate coupled to the second voltage terminal at a third node, a drain coupled to the first voltage terminal at a fourth node, and a source coupled to a fifth node; and

a fourth N-type transistor comprising a gate coupled to the fourth node, a drain coupled to the third node, and a source coupled to the fifth node,

wherein the gate of the second N-type transistor is coupled to the fifth node, and the control voltage is generated at the fifth node.

15. The level shifter as claimed in claim 14 , wherein the level shifting circuit further comprises:

a second P-type transistor comprising a gate coupled to the second node, a source coupled to the second voltage terminal, and a drain coupled to the first node;

wherein the gate of the first P-type transistor is coupled to the first node.

16. The level shifter as claimed in claim 15 , further comprising:

a third P-type transistor comprising a gate and a source coupled to the second voltage terminal, and a drain coupled to the second node.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 29, 2023
From: CHUANG, JUNG-TSUN; HUANG, SHAO-CHANG; CHEN, LI-FAN; CHEN, CHUN-CHIH; LIN, GONG-KAI; WANG, CHIEN-WEI
To: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
Reel/Frame 065713/0740 →
Continuity (1)
Related Publication 20250167785A1 · May 22, 2025
References Cited (2)
US 10256820B2 · Duby · 2019 [cited by examiner]
US 11431339B1 · Ma · 2022 [cited by examiner]