High aspect ratio vias filled with liquid metal fill
A substrate includes a substrate body made of a material such as glass, and at least one electrical via that extends at least into or through the substrate body. The via is metalized with a molten metal that enters the via under capillary action and solidifies to establish electrical conductivity through the via. The melting temperature of the metal is less than the transition temperature and melting temperature of the substrate body.
1. A method of metallizing a monolithic substrate body, the method comprising the steps of:
physically contacting a metal with a first surface of the monolithic substrate body opposite a second surface of the monolithic substrate body, wherein the metal comprises gold or a gold alloy, and the monolithic substrate body comprises sapphire;
causing a quantity of the metal in a molten state to flow via capillary action from the first surface toward the second surface of the monolithic substrate body in a via that extends along a centerline from the first surface to the second surface, so as to define a contact angle between the metal in the molten state and a metallic wetting liner, wherein the contact angle is less than 90 degrees; and
solidifying the metal in the molten state in the via to produce a solidified metal that defines an electrically conductive path between the first surface and the second surface,
wherein the contact angle is measured at an intersection between the metallic wetting liner and a straight line that extends tangent to an outer surface of the metal in the molten state in the via without crossing over the centerline, and the straight line is oriented toward the first surface of the monolithic substrate body.
2. The method of claim 1 , further comprising, prior to the physically contacting step, applying an adhesion layer to an inner surface of the monolithic substrate body that extends from the first surface to the second surface.
3. The method of claim 2 , further comprising the step of applying the metallic wetting liner to the adhesion layer prior to the melting step, such that the adhesion layer is disposed between the inner surface and the metallic wetting liner.
4. The method of claim 3 , wherein the metallic wetting liner comprises at least one of copper, gold, a gold alloy, and a copper alloy.
5. The method of claim 3 , wherein the adhesion layer and the metallic wetting liner are each devoid of tin.
6. The method of claim 2 , wherein the adhesion layer comprises titanium or tantalum.
7. The method of claim 1 , wherein the solidified metal defines an electrical path from the first surface to the second surface.
8. The method of claim 1 , wherein the contacting step comprises placing a quantity of the metal in a solid state on the first surface of the substrate body such that the quantity of the metal in the solid state is in physical contact with the first surface of the monolithic substrate body.
9. The method of claim 8 , further comprising the step of melting the metal in the solid state after the placing step, so as to transition the metal in the solid state to the metal in the molten state.
10. The method of claim 9 , wherein the melting step comprises selectively applying an excitation device to the quantity of solid metal sufficient to cause the solid metal to reach a melting temperature that causes the solid metal to melt.
11. The method of claim 10 , wherein the excitation device is a laser that directs a laser beam to the quantity of solid metal.
12. The method of claim 9 , further comprising pre-heating the substrate body prior to the melting step.
13. The method of claim 9 , wherein the melting step comprises inducing eddy currents in the metal in the solid state.
14. The method of claim 1 , wherein the via has an aspect ratio of at least approximately five, wherein the aspect ratio is a ratio of a length of the via from the first surface to the second surface along a central axis with respect to a maximum cross-sectional dimension of the via along a direction perpendicular to the central axis.
15. The method of claim 1 , wherein the contacting step comprises placing the substrate body in a bath of the metal in the molten state.
16. The method of claim 1 , comprising the step of filling voids with a polymer, wherein the voids are defined by metal in the via.
17. The method of claim 1 , further comprising the step of applying a redistribution layer to at least one or both of the first and second surfaces in electrical communication with the via.
18. The method of claim 1 , wherein the metal is defined by a first mass of metal, the method further comprising the steps of:
physically contacting a second mass of metal with the second surface of the monolithic substrate body,
causing a quantity of the second mass of metal in a molten state to flow via capillary action from the second surface toward the first surface in the via; and
solidifying the metal of the second mass of metal in the molten state in the via.