Methods of fabricating trench capacitors on a shared plate electrode
A device structure comprises a first conductive interconnect, an electrode structure on the first conductive interconnect, an etch stop layer laterally surrounding the electrode structure; a plurality of memory devices above the electrode structure, where individual ones of the plurality of memory devices comprise a dielectric layer comprising a perovskite material. The device structure further comprises a plate electrode coupled between the plurality of memory devices and the electrode structure, where the plate electrode is in direct contact with a respective lower most conductive layer of the individual ones of the plurality of memory devices. The device structure further includes an insulative hydrogen barrier layer on at least a sidewall of the individual ones of the plurality of memory devices; and a plurality of via electrodes, wherein individual ones of the plurality of via electrodes are on a respective one of the individual ones of the plurality of memory devices.
1. A method of fabricating a device structure, the method comprising:
forming at least a first conductive interconnect in a first dielectric in a memory region and a second conductive interconnect in a first dielectric in a logic region;
depositing an etch stop layer on the first dielectric and on the first conductive interconnect and on the second conductive interconnect;
forming an electrode structure on the first conductive interconnect by etching a first opening in the etch stop layer and depositing a first conductive hydrogen barrier layer and a first conductive material in the first opening;
depositing a conductive layer on the electrode structure and on the etch stop layer;
forming a mask on the conductive layer;
etching the conductive layer to form a plate electrode;
depositing a second dielectric on the plate electrode and on the etch stop layer;
forming a plurality of trench capacitors on the plate electrode by a process, comprising:
forming a plurality of trenches in the second dielectric, wherein individual ones of the plurality of trenches expose the plate electrode;
forming a dielectric spacer on sidewalls of the individual ones of the plurality of trenches;
depositing a first electrode layer on a base and adjacent to the dielectric spacer, wherein the first electrode layer comprises a first conductive nonlinear polar material;
depositing a dielectric layer comprising a perovskite material on the first electrode layer; and
depositing a second electrode layer on the dielectric layer, wherein the second electrode layer comprises a second conductive nonlinear polar material;
forming a plurality of via electrodes, wherein individual ones of the plurality of via electrodes are formed on an individual ones of the plurality of trench capacitors;
forming a second opening in the second dielectric and in the etch stop layer, wherein the second opening is formed above the second conductive interconnect;
depositing a conductive material in the second opening to form a via structure on the second conductive interconnect; and
forming a metal structure on the via structure.
2. The method of claim 1 , wherein the plate electrode comprises a first perimeter that extends beyond a second perimeter of the electrode structure.
3. The method of claim 1 , wherein the conductive layer is deposited to a thickness of at least 5 nm.
4. The method of claim 2 , wherein forming the plurality of trenches comprises etching the second dielectric to expose portions of an uppermost surface of the plate electrode, wherein the first perimeter extends beyond a third perimeter of the individual ones of the plurality of trenches.
5. The method of claim 1 , wherein forming the plurality of trenches in the second dielectric comprises etching the second dielectric to form tapered sidewalls.
6. The method of claim 1 , wherein forming the dielectric spacer comprises:
conformally depositing an insulator layer comprising silicon nitride, carbon doped silicon nitride, Al x O y , HfO x , ZrO x , TaO x , TiO x , AlSiO x , HfSiO x , or TaSiO x on the base and on the sidewalls of the individual ones of the plurality of trenches and etching and removing the insulator layer from the base.
7. The method of claim 1 , wherein depositing the perovskite material comprises depositing one of:
bismuth ferrite (BFO), or BFO with a first doping material wherein the first doping material is one of lanthanum or elements from lanthanide series of periodic table;
lead zirconium titanate (PZT) or PZT with a second doping material, wherein the second doping material is one of La or Nb;
a relaxor ferroelectric material which includes one of: lead magnesium niobate (PMN), lead magnesium niobate-lead titanate (PMN-PT), lead lanthanum zirconate titanate (PLZT), lead scandium niobate (PSN), barium titanium-bismuth zinc niobium tantalum (BT-BZNT), or Barium titanium-barium strontium titanium (BT-BST);
a perovskite material which includes one of: BaTiO 3 , PbTiO 3 , KNbO 3 , or NaTaO 3 ; hexagonal ferroelectric which includes one of: YMnO 3 , or LuFeO 3 ;
hexagonal ferroelectrics of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y);
hafnium (H), zirconium (Zr), aluminum (Al), silicon (Si), their oxides, or their alloyed oxides;
hafnium oxides as Hf (1-x) E x O y , where E can be Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, Zr, or Y, wherein x and y are first and second fractions, respectively;
Al (1-x) Sc (x) N, Ga (1-x) Sc (x) N, Al (1-x) Y (x) N or Al (1-x-y) Mg (x) Nb (y) N, wherein x and y are third and fourth fractions, respectively;
y doped HfO 2 , where y includes one of: Al, Ca, Ce, Dy, Er, Gd, Ge, La, Sc, Si, Sr, Sn, or Y;
niobate type compounds LiNbO 3 , LiTaO 3 , lithium iron tantalum oxy fluoride, barium strontium niobate, sodium barium niobate, or potassium strontium niobate;
an improper ferroelectric material which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 and 100; or
a paraelectric material comprising SrTiO 3 , Ba (x) Sr (y) TiO 3 (where x is −0.05, and y is 0.95), HfZrO 2 , Hf—Si—O, La-substituted PbTiO 3 , or a PMN-PT based relaxor ferroelectric.
8. The method of claim 1 , wherein depositing the first electrode layer comprises depositing a first conductive material comprising one of La—Sr—CoO 3 , SrRuO 3 , La—Sr—MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , or LaNiO 3 , and wherein depositing the second electrode layer comprises depositing a second conductive material comprising one of La—Sr—CoO 3 , SrRuO 3 , La—Sr—MnO 3 , YBa 2 Cu 3 O 7 , Bi 2 Sr 2 CaCu 2 O 8 , or LaNiO 3 .
9. The method of claim 1 , wherein depositing the first electrode layer, the second electrode layer and the dielectric layer comprises utilizing one or more of an atomic layer deposition process performed at a first process temperature between 160 degrees C. and 400 degrees C., a physical vapor deposition process performed at a second process temperature between 23 degrees C. and 400 degrees C., or a chemical vapor deposition process performed at a third process temperature between 160 degrees C. and 400 degrees C.
10. The method of claim 1 , wherein forming the plurality of trench capacitors further comprises performing a chemical mechanical planarization process to form an uppermost surface comprising the second electrode layer surrounded by an annular ring of the dielectric layer, wherein the annular ring of the dielectric layer is further surrounded by the first electrode layer, and wherein the first electrode layer and the dielectric layer are a substantially U-shaped, and the second electrode layer is substantially cylindrical.
11. The method of claim 1 , further comprises:
forming a third opening by etching the second dielectric and exposing an uppermost surface of the plate electrode; and
depositing a liner layer in the third opening and depositing a fourth conductive material in the third opening to form a signal electrode that extends from the uppermost surface of the plate electrode to uppermost surfaces of the plurality of via electrodes.
12. The method of claim 11 , wherein the third opening is formed at one end of the plate electrode.
13. The method of claim 1 , further comprises depositing a third dielectric comprising SiN prior to forming the plurality of via electrodes or hanging trenches.
14. A method of fabricating a device structure, the method comprising:
forming at least a first conductive interconnect in a first dielectric in a memory region and a second conductive interconnect in the first dielectric in a logic region;
depositing an etch stop layer on the first dielectric and on the first conductive interconnect and on the second conductive interconnect;
forming an electrode structure on the first conductive interconnect by etching a first opening in the etch stop layer and depositing a first conductive hydrogen barrier layer and a first conductive material in the first opening;
depositing a conductive layer on the electrode structure and on the etch stop layer;
forming a mask on the conductive layer;
etching the conductive layer to form a plate electrode comprising a length;
depositing a second dielectric on the plate electrode and on the etch stop layer;
forming a plurality of trench capacitors along the length of the plate electrode by a second process, comprising:
forming a plurality of trenches in the second dielectric, wherein individual ones of the plurality of trenches expose the plate electrode;
depositing a second conductive hydrogen barrier layer along a base and on sidewalls of the individual ones of the plurality of trenches;
depositing a first electrode layer adjacent to the second conductive hydrogen barrier layer, wherein the first electrode layer comprises a first conductive nonlinear polar material;
depositing a dielectric layer comprising a perovskite material on the first electrode layer;
depositing a second electrode layer on the dielectric layer, wherein the second electrode layer comprises a second conductive nonlinear polar material; and
depositing a conductive fill material adjacent to the second electrode layer;
depositing a third dielectric on the second dielectric and on the plurality of trench capacitors;
forming a plurality of via electrodes, wherein individual ones of the plurality of via electrodes are formed on an individual ones of the plurality of trench capacitors;
forming a hanging trench in the third dielectric;
forming a second opening in the second dielectric and in the etch stop layer, wherein the second opening is formed above the second conductive interconnect; and
depositing a conductive material in the hanging trench and in the second opening to form a via structure on the second conductive interconnect and a metal structure in the third dielectric on the via structure.
15. The method of claim 14 , wherein depositing the second conductive hydrogen barrier layer comprises utilizing an atomic layer deposition process to blanket deposit the first conductive hydrogen barrier layer on the first conductive interconnect and on sidewalls of the etch stop layer to form a conductive hydrogen barrier layer having a lateral portion and substantially vertical portions connected to the lateral portion, wherein depositing the first conductive hydrogen barrier layer further comprises depositing a material comprising TiAlN, with greater than 30 atomic percent AlN, TaN with greater than 30 atomic percent N 2 , TiSiN with greater than 20 atomic percent SiN, TaC, TiC, WC, WN, carbonitrides of Ta, Ti or W, TiO, Ti 2 O, WO 3 , SnO 2 , ITO, IGZO, ZO, or METGLAS series of alloys, and wherein the second conductive hydrogen barrier layer laterally surrounds the first electrode layer, the dielectric layer, and the second electrode layer, and wherein the third dielectric comprises SiN.
16. The method of claim 15 , wherein forming the plurality of trench capacitors further comprises performing a chemical mechanical planarization process to form an uppermost surface comprising the second electrode layer surrounded by an annular ring of the dielectric layer, wherein the annular ring of the dielectric layer is further surrounded by the first electrode layer, wherein the annular ring of the first electrode layer is further surrounded by the second conductive hydrogen barrier layer, and wherein the second conductive hydrogen barrier layer, the first electrode layer and the dielectric layer are a substantially U-shaped, and the second electrode layer is substantially cylindrical.
17. A method of fabricating a device structure, the method comprising:
forming at least a first conductive interconnect in a first dielectric in a memory region and a second conductive interconnect in the first dielectric in a logic region;
depositing an etch stop layer on the first dielectric and on the first conductive interconnect and on the second conductive interconnect;
forming an electrode structure on the first conductive interconnect by etching a first opening in the etch stop layer and depositing a first conductive hydrogen barrier layer and a first conductive material in the first opening;
depositing a conductive layer on the electrode structure and on the etch stop layer;
forming a mask on the conductive layer;
etching the conductive layer to form a plate electrode;
depositing an encapsulation layer on the plate electrode and on the etch stop layer;
depositing a second dielectric on the encapsulation layer;
forming a plurality of trench capacitors on the plate electrode by a process, comprising:
forming a plurality of trenches in the second dielectric and in the encapsulation layer, wherein individual ones of the plurality of trenches expose the plate electrode;
forming a dielectric spacer on sidewalls of the individual ones of the plurality of trenches;
depositing a first electrode layer on a base and adjacent to the dielectric spacer, wherein the first electrode layer comprises a first conductive nonlinear polar material;
depositing a dielectric layer comprising a perovskite material on the first electrode layer; and
depositing a second electrode layer on the dielectric layer, wherein the second electrode layer comprises a second conductive nonlinear polar material;
forming a via electrode on the individual ones of the plurality of trench capacitors;
forming a second opening in the second dielectric, in the encapsulation layer and in the etch stop layer, wherein the second opening is formed above the second conductive interconnect;
depositing a conductive material in the second opening to form a via structure on the second conductive interconnect; and
forming a metal structure on the via structure.
18. The method of claim 17 , wherein depositing the encapsulation layer further comprises depositing on sidewalls of the plate electrode.
19. The method of claim 17 , wherein forming the dielectric spacer comprises:
conformally depositing an insulator layer comprising silicon nitride, carbon doped silicon nitride, Al x O y , HfO x , ZrO x , TaO x , TiO x , AlSiO x , HfSiO x , or TaSiO x on the base and on the sidewalls of the individual ones of the plurality of trenches and etching and removing the insulator layer from the base.
20. The method of claim 19 , wherein the encapsulation layer and the dielectric spacer comprise a same material.