High-density low voltage non-volatile differential memory bit-cell with shared plate line
Described is a low power, high-density non-volatile differential memory bit-cell. The transistors of the differential memory bit-cell can be planar or non-planer and can be fabricated in the frontend or backend of a die. A bit-cell of the non-volatile differential memory bit-cell comprises first transistor first non-volatile structure that are controlled to store data of a first value. Another bit-cell of the non-volatile differential memory bit-cell comprises second transistor and second non-volatile structure that are controlled to store data of a second value, wherein the first value is an inverse of the second value. The first and second volatile structures comprise ferroelectric material (e.g., perovskite, hexagonal ferroelectric, improper ferroelectric).
1. A capacitive structure comprising:
a first structure comprising a first refractive inter-metallic material;
a second structure comprising a first conductive oxide;
a third structure comprising a ferroelectric material, wherein the third structure is adjacent to the second structure;
a fourth structure comprising a second conductive oxide, wherein the fourth structure is adjacent to the third structure, and wherein the third structure is between the second and fourth structures;
a fifth structure comprising a second refractive inter-metallic material, wherein the fifth structure is adjacent the fourth structure;
a sixth structure directly adjacent to first sides of the first, second, third, fourth, and fifth structures; and
a seventh structure directly adjacent to second sides of the first, second, third, fourth, and fifth structures, wherein the sixth and the seventh structures comprise a barrier material.
2. The capacitive structure of claim 1 , wherein the ferroelectric material is one of: a perovskite, a hexagonal ferroelectric, or an improper ferroelectric.
3. The capacitive structure of claim 1 , wherein: the ferroelectric material includes one of:
perovskite which includes one of: LaCoO3, SrCoO3, SrRuO3, LaMnO3, SrMnO3, YBa2Cu3O7, Bi2Sr2CaCu2O8, or LaNiO3;
a hexagonal ferroelectric which includes one of: YMnO3, or LuFeO3;
a hexagonal ferroelectric of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y); or
an improper ferroelectric which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100.
4. The capacitive structure of claim 1 , wherein the barrier material includes one or more of an oxide of: Ti, Al, or Mg.
5. The capacitive structure of claim 1 , wherein the first or second refractive inter-metallic materials include one or more of: Ti, Al, Ta, W, or Co.
6. The capacitive structure of claim 1 , wherein the first and second conductive oxides include oxides of one of:
Ir, Ru, Pd, Ps, or Re when the ferroelectric material is a perovskite;
PtCo, PdCo, or delafossite structured hexagonal metallic when the ferroelectric material is a hexagonal ferroelectric;
Fe, LiV; or
InTi.
7. The capacitive structure of claim 1 , wherein the ferroelectric material is doped with Sc or Mn to control leakage through the ferroelectric material.
8. A method for forming a capacitive structure, the method comprising:
forming a first structure comprising a first refractive inter-metallic material;
forming a second structure comprising a first conductive oxide;
forming a third structure comprising a ferroelectric material, wherein the third structure is adjacent to the second structure;
forming a fourth structure comprising a second conductive oxide, wherein the fourth structure is adjacent to the third structure, and wherein the third structures is between the second and fourth structures;
forming a fifth structure comprising a second refractive inter-metallic material, wherein the fifth structure is adjacent the fourth structure;
forming a sixth structure directly adjacent to first sides of the first, second, third, fourth, and fifth structures; and
forming a seventh structure directly adjacent to second sides of the first, second, third, fourth, and fifth structures, wherein the sixth and the seventh structures comprise a barrier material.
9. The method of claim 8 , wherein the ferroelectric material is one of: a perovskite, a hexagonal ferroelectric, or an improper ferroelectric.
10. The method of claim 8 , wherein: the ferroelectric material includes one of:
a perovskite which includes one of: LaCoO3, SrCoO3, SrRuO3, LaMnO3, SrMnO3, YBa2Cu3O7, Bi2Sr2CaCu2O8, or LaNiO3;
a hexagonal ferroelectric which includes one of: YMnO3, or LuFeO3;
a hexagonal ferroelectric of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y); or
an improper ferroelectric which includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100.
11. The method of claim 8 , wherein the barrier material includes one or more of an oxide of: Ti, Al, or Mg.
12. The method of claim 8 , wherein the first or second refractive inter-metallic material include one or more of: Ti, Al, Ta, W, or Co.
13. The method of claim 8 , wherein the first and second conductive oxides include oxides of one of:
Ir, Ru, Pd, Ps, or Re when the ferroelectric material is a perovskite;
PtCo, PdCo, of delafossite structured hexagonal metallic when the ferroelectric material is a hexagonal ferroelectric;
Fe, LiV; or
InTi.
14. The method of claim 8 , wherein the ferroelectric material is doped with Sc or Mn to control leakage through the ferroelectric material.
15. A system comprising:
a memory comprising a capacitive structure; and
an artificial intelligence (AI) processor coupled to the memory, wherein the capacitive structure comprises:
a first structure comprising a first refractive inter-metallic material;
a second structure comprising a first conductive oxide;
a third structure comprising a ferroelectric material, wherein the third structure is adjacent to the second structure;
a fourth structure comprising a second conductive oxide, wherein the fourth structure is adjacent to the third structure, and wherein the third structures is between the second and fourth structures;
a fifth structure comprising a second refractive inter-metallic material, wherein the fifth structure is adjacent the fourth structure;
a sixth structure directly adjacent to first sides of the first, second, third, fourth, and fifth structures; and
a seventh structure directly adjacent to second sides of the first, second, third, fourth, and fifth structures, wherein the sixth and the seventh structures comprise a barrier material.
16. The system of claim 15 , wherein the ferroelectric material is one of: a perovskite, a hexagonal ferroelectric, or an improper ferroelectric.
17. The system of claim 15 , wherein: the ferroelectric material includes one of:
a perovskite which includes one of: LaCoO3, SrCoO3, SrRuO3, LaMnO3, SrMnO3, YBa2Cu3O7, Bi2Sr2CaCu2O8, or LaNiO3;
a hexagonal ferroelectric which includes one of: YMnO3, or LuFeO3;
a hexagonal ferroelectric of a type h-RMnO3, where R is a rare earth element which includes one of: cerium (Ce), dysprosium (Dy), erbium (Er), europium (Eu), gadolinium (Gd), holmium (Ho), lanthanum (La), lutetium (Lu), neodymium (Nd), praseodymium (Pr), promethium (Pm), samarium (Sm), scandium (Sc), terbium (Tb), thulium (Tm), ytterbium (Yb), or yttrium (Y); or
an improper ferroelectric includes one of: [PTO/STO]n or [LAO/STO]n, where ‘n’ is between 1 to 100.
18. The system of claim 15 , wherein the barrier material includes one or more of an oxide of: Ti, Al, or Mg.
19. The system of claim 15 , wherein the first or second refractive inter-metallic materials include one or more of: Ti, Al, Ta, W, or Co.
20. The system of claim 15 , wherein the first and second conductive oxides include oxides of one of:
Ir, Ru, Pd, Ps, or Re when the ferroelectric material is a perovskite;
PtCo, PdCo, or delafossite structured hexagonal metallic when the ferroelectric material is a hexagonal ferroelectric;
Fe, LiV; or
InTi.