Electrode structure and quantum dot electroluminescent device
An electrode structure is disclosed. The electrode structure consists of a seed layer, an electrode layer formed on the seed layer and a cover layer formed on the electrode layer. This electrode structure is for application in the manufacture of a quantum dots electroluminescent device, so as to act as an anode electrode or a cathode electrode of the QD electroluminescent device. Experimental data have revealed that, there is no transmittance imbalance occurring in the QD electroluminescent device using the particularly-designed electrode structure. Moreover, the QD electroluminescent device has enhanced in the brightness, total current efficiency and EQE thereof.
1. An electrode structure for being integrated in an electronic component, comprising:
a seed layer, being connected to a functional material layer in the electronic component;
an electrode layer, being formed on the seed layer, and comprising a main film made of Ag and a dopant enclosed in the main film; and
a capping layer, being formed on the electrode layer;
wherein the dopant is Cu, and an amount of the dopant being in a range between 0.1% and 20%.
2. The electrode structure of claim 1 , wherein the electronic component is a regular-type quantum dot (QD) electroluminescent device, such that the functional material layer being an electron transport (ET) layer.
3. The electrode structure of claim 1 , wherein the electronic component is an inverted-type quantum dot (QD) electroluminescent device, such that the functional material layer being an hole transport (HT) layer.
4. The electrode structure of claim 1 , wherein the seed layer is made of a metal oxide.
5. The electrode structure of claim 4 , wherein the capping layer is also made of a metal oxide, such that the capping layer, the electrode layer and the seed layer constitute a dielectric/metal/dielectric (DMD) structure.
6. The electrode structure of claim 1 , wherein the seed layer has a first thickness in a range between 2 nm and 5 nm, the electrode layer having a second thickness in a range between 15 nm and 25 nm, and the capping layer having a third thickness in a range between 30 nm and 50 nm.
7. A quantum dot electroluminescent device, comprising:
an anode layer;
a hole injection layer, being formed on the anode layer;
a hole transport layer, being formed on the hole injection layer;
an emission layer, being formed on the hole transport layer;
an electron transport layer, being formed on the emission layer; and
an electrode structure, comprising: a seed layer formed on the electron transport layer, an electrode layer formed on the seed layer, and a capping layer formed on the electrode layer;
wherein the electrode layer consists of a main film made of Ag and a dopant enclosed in the main film, the dopant being Cu, and an amount of the dopant being in a range between 0.1% and 20%.
8. The quantum dot electroluminescent device of claim 7 , wherein the seed layer is made of a metal oxide.
9. The quantum dot electroluminescent device of claim 8 , wherein the capping layer is also made of a metal oxide, such that the capping layer, the electrode layer and the seed layer constitute a dielectric/metal/dielectric (DMD) structure.
10. The quantum dot electroluminescent device of claim 7 , wherein the seed layer has a first thickness in a range between 2 nm and 5 nm, the electrode layer having a second thickness in a range between 15 nm and 25 nm, and the capping layer having a third thickness in a range between 30 nm and 50 nm.
11. The quantum dot electroluminescent device of claim 7 , wherein in case of a voltage source being coupled between the anode and the electrode structure, the emission layer radiating a monochromatic light.
12. The quantum dot electroluminescent device of claim 7 , wherein in case of a voltage source being coupled between the anode and the electrode structure, the emission layer radiating a multi-wavelength light.
13. A quantum dot electroluminescent device, comprising:
a cathode layer;
an electron injection layer, being formed on the cathode layer;
an electron transport layer, being formed on the electron injection layer;
an emission layer, being formed on the electron transport layer;
a hole transport layer, being formed on the emission layer; and
an electrode structure, comprising: a seed layer formed on the hole transport layer, an electrode layer formed on the seed layer, and a capping layer formed on the electrode layer;
wherein the electrode layer consists of a main film made of Ag and a dopant enclosed in the main film, the dopant being Cu, and an amount of the dopant being in a range between 0.1% and 20%.
14. The quantum dot electroluminescent device of claim 13 , wherein the seed layer is made of molybdenum oxide.
15. The quantum dot electroluminescent device of claim 13 , wherein the capping layer is also made of molybdenum oxide, such that the capping layer, the electrode layer and the seed layer constitute a dielectric/metal/dielectric (DMD) structure.
16. The quantum dot electroluminescent device of claim 13 , wherein the seed layer has a first thickness in a range between 2 nm and 5 nm, the electrode layer having a second thickness in a range between 15 nm and 25 nm, and the capping layer having a third thickness in a range between 30 nm and 50 nm.
17. The quantum dot electroluminescent device of claim 13 , wherein in case of a voltage source being coupled between the anode and the electrode structure, the emission layer radiating a monochromatic light.
18. The quantum dot electroluminescent device of claim 13 , wherein in case of a voltage source being coupled between the anode and the electrode structure, the emission layer radiating a multi-wavelength light.