Light-emitting device, substrate thereof and fabrication method
View Patent ↗A fabrication method for a substrate of a light-emitting device comprises: fabricating an organic photoresist layer on the surface of a substrate provided with a protruding structure, so that the organic photoresist layer covers the protruding structure, wherein by means of semi-exposing, developing and removing a portion of the thickness of a specific region of the organic photoresist layer, the specific region is a region of the organic photoresist layer that covers the protruding structure; and post-bake curing the remaining portion of the organic photoresist layer to form a planarization layer.
1. A method for fabricating a substrate of a light-emitting device, the method comprising:
fabricating an organic photoresist layer on a surface of a substrate having a protruding portion;
enabling the organic photoresist layer to cover the protruding portion;
removing a portion with a certain thickness of a specific region of the organic photoresist layer by half-exposure and development, the specific region being a region of the organic photoresist layer covering the protruding portion; and
post-drying and curing the remaining portion of the organic photoresist layer to form a planarization layer,
wherein in the removing the portion with the certain thickness of the specific region of the organic photoresist layer by half-exposure and development, the thickness is calculated according to a condition (I):
C=m ·( D/X−D ), (I)
wherein C is the thickness of the portion of the specific region of the organic photoresist layer removed by half-exposure and development, D is a height of the protruding portion protruding from the surface of the substrate, and X is a curing shrinkage rate of a material of the organic photoresist layer, 0.5<m≤1.5.
2. The method according to claim 1 , wherein 0.8<m≤1.2.
3. The method according to claim 2 , wherein m=1.
4. The method according to claim 1 , further comprising, prior to the post-drying and curing:
fabricating a via hole in a region of the organic photoresist layer other than the specific region,
wherein the via hole is configured for being electrically connected to a source-drain of a thin-film transistor (TFT) driving array.
5. The method according to claim 1 , further comprising, prior to the post-drying and curing:
fabricating a via hole in a region of the organic photoresist layer other than the specific region,
wherein the via hole is configured for being electrically connected to a source-drain of a thin-film transistor (TFT) driving array.
6. The method according to claim 2 , further comprising, prior to the post-drying and curing:
fabricating a via hole in a region of the organic photoresist layer other than the specific region,
wherein the via hole is configured for being electrically connected to a source-drain of a thin-film transistor (TFT) driving array.
7. The method according to claim 3 , further comprising, prior to the post-drying and curing:
fabricating a via hole in a region of the organic photoresist layer other than the specific region,
wherein the via hole is configured for being electrically connected to a source-drain of a thin-film transistor (TFT) driving array.
8. The method according to claim 1 , wherein a thin-film transistor (TFT) driving array is disposed on the substrate, and the protruding portion is formed by protruding the TFT driving array from the surface of the substrate.
9. The method according to claim 1 , wherein a thin-film transistor (TFT) driving array is disposed on the substrate, and the protruding portion is formed by protruding the TFT driving array from the surface of the substrate.
10. The method according to claim 2 , wherein a thin-film transistor (TFT) driving array is disposed on the substrate, and the protruding portion is formed by protruding the TFT driving array from the surface of the substrate.
11. The method according to claim 3 , wherein a thin-film transistor (TFT) driving array is disposed on the substrate, and the protruding portion is formed by protruding the TFT driving array from the surface of the substrate.
12. The method according to claim 1 , wherein the organic photoresist layer is made of a positive organic photoresist material.
13. The method according to claim 1 , wherein the organic photoresist layer is made of a positive organic photoresist material.
14. The method according to claim 2 , wherein the organic photoresist layer is made of a positive organic photoresist material.
15. The method according to claim 3 , wherein the organic photoresist layer is made of a positive organic photoresist material.
16. A substrate of a light-emitting device, configured to be fabricated by the method according to claim 1 .
17. A light-emitting device, comprising:
the substrate according to claim 16 ;
a first electrode disposed on the planarization layer;
a light-emitting functional layer disposed on the first electrode; and
a second electrode disposed on the light-emitting functional layer.
18. A method for fabricating a light-emitting device, the method comprising:
fabricating an organic photoresist layer on a surface of a substrate having a protruding portion;
enabling the organic photoresist layer to cover the protruding portion;
removing a portion with a certain thickness of a specific region of the organic photoresist layer by half-exposure and development, the specific region being a region of the organic photoresist layer covering the protruding portion;
post-drying and curing the remaining portion of the organic photoresist layer to form a planarization layer;
fabricating a first electrode on the planarization layer;
fabricating a light-emitting functional layer on the first electrode; and
fabricating a second electrode on the light-emitting functional layer,
wherein in the removing the portion with the certain thickness of the specific region of the organic photoresist layer by half-exposure and development, the thickness is calculated according to a condition (I):
C=m ·( D/X−D ), (I)
wherein C is the thickness of the portion of the specific region of the organic photoresist layer removed by half-exposure and development, D is a height of the protruding portion protruding from the surface of the substrate, and X is a curing shrinkage rate of a material of the organic photoresist layer, 0.5<m≤1.5.