Vapor phase growth method using reflector with changeable pattern
A vapor phase growth apparatus according to an embodiment includes a reaction chamber, a holder provided in the reaction chamber, the holder holding a substrate, a heater heating the substrate, a first reflector facing the holder, the heater being interposed between the first reflector and the holder, a second reflector provided between the first reflector and the heater, the second reflector having a compressive strength or a bending strength equal to or less than 1000 MPa or a Vickers hardness equal to or less than 8 GPa, the second reflector having a pattern, and a rotating shaft fixed to the holder, the rotating shaft rotating the holder.
1. A vapor phase growth method comprising:
heating a first substrate using a heater and a reflector with a first pattern, the heater being interposed between the reflector and the first substrate;
measuring a characteristic distribution of the first substrate under a predetermined process condition, the predetermined process condition being a temperature condition of growing a semiconductor film on a second substrate;
changing the reflector from the first pattern to a second pattern different from the first pattern on a basis of the characteristic distribution of the first substrate; and
forming the semiconductor film on the second substrate under the predetermined process condition, using the heater and the reflector changed to the second pattern,
wherein the reflector includes a first reflector and a second reflector,
the first reflector has a first sub-pattern and the second reflector has a second sub-pattern,
the first reflector and the second reflector are configured to rotate relatively in circumferential direction to change a pattern of the reflector from the first pattern to the second pattern,
the first sub-pattern includes first hole patterns, the first hole patterns have a symmetry axis that passes through a center of rotation, the first hole patterns are line symmetric with respect to the symmetry axis, and
the second sub-pattern includes second hole patterns, the second hole patterns do not have a symmetry axis that passes through the center of rotation, the first hole patterns and the second hole patterns are configured to overlap at a certain rotation angle.
2. The vapor phase growth method according to claim 1 ,
wherein the characteristic distribution is a temperature distribution.