Apparatus for treating substrate and method for treating substrate
The inventive concept provides a substrate treating apparatus. The substrate treating apparatus includes a chamber having an inner space; a plasma source configured to apply an electric field; a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere; a support unit disposed in the inner space and configured to support a substrate to be treated; and an electrodeless lamp disposed above the substrate in the inner space, and wherein the electrodeless lamp includes an electric field transmissive housing having a discharging space therein; and a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.
1. A substrate treating apparatus comprising:
a chamber having an inner space;
a plasma source configured to apply an electric field;
a first gas supply unit configured to supply a first process gas to a region to which the plasma source applies the electric field, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere;
a support unit disposed in the inner space and configured to support a substrate to be treated; and
an electrodeless lamp disposed above the substrate in the inner space, and
wherein the electrodeless lamp comprises:
an electric field transmissive housing having a discharging space therein; and
a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure.
2. The substrate treating apparatus of claim 1 , wherein the luminous material comprises a sulfur-containing material, a metal sulfide, a metal halide, a mercury, or a fluorescent material.
3. The substrate treating apparatus of claim 1 , wherein the discharging material is a mixed gas of an inert gas and the luminous material.
4. The substrate treating apparatus of claim 1 , wherein the second pressure is higher than the first pressure.
5. The substrate treating apparatus of claim 1 , wherein the discharging space of the housing has a first volume, and a size of the first volume is in proportion to an electric field of the second intensity applied by the plasma source.
6. The substrate treating apparatus of claim 1 , wherein the housing comprises a dielectric.
7. The substrate treating apparatus of claim 1 , wherein the housing comprises a quartz or a Y 2 O 3 .
8. The substrate treating apparatus of claim 1 further comprises a plate-shape ion blocker dividing the inner space of the chamber into a first space and a second space below the first space, having a plurality of through-holes, and grounded, and
wherein the electrodeless lamp is coupled to the ion blocker.
9. The substrate treating apparatus of claim 8 , wherein the first gas supply unit supplies the first process gas to the first space.
10. The substrate treating apparatus of claim 9 further comprises a second gas supply unit configured to supply a second process gas to the second space, and wherein the plasma source is configured to supply the electric field to the first space.
11. The substrate treating apparatus of claim 1 , wherein the first supply gas is gas including a fluorine.
12. The substrate treating apparatus of claim 10 , wherein the second process gas is a gas including a hydrogen.
13. The substrate treating apparatus of claim 8 , wherein the electrodeless lamp is provided at a center of the ion blocker.
14. The substrate treating apparatus of claim 1 , wherein the electrodeless lamp is provided in a plurality.
15. The substrate treating apparatus of claim 1 , wherein a side wall and a top wall of the discharging space of the housing comprise a reflective coating.
16. The substrate treating apparatus of claim 1 further comprises a controller, and
wherein the controller is configured to perform:
a first treating for a divergence of the electric field of the first intensity by the plasma source at the first pressure atmosphere while supplying the first process gas from the first gas supply unit to generate a plasma from the first process gas, and treating a substrate with radicals or ions of the plasma; and
a second treating for discharging the electrodeless lamp to heat treat a substrate by stopping the supplying of the first process gas, exhausting the first process gas in the inner space and causing the plasma source to diverge the electric field of the second intensity.
17. The substrate treating apparatus of claim 10 further comprises a controller, and
wherein the controller is configured to perform:
a first treating for a divergence of an electric field of the first intensity by the plasma source at the first pressure atmosphere while supplying the first process gas from the first gas supply unit and supplying the second process gas from the second gas supply unit to generate a plasma from the first process gas, and treating a substrate with a reaction resultant between radicals of the plasma and the second process gas; and
a second treating for discharging the electrodeless lamp to heat treat a substrate by stopping the supplying of the first process gas and the second process gas, exhausting the reaction resultant and causing the plasma source to diverge the electric field of the second intensity.
18. The substrate treating apparatus of claim 1 , wherein the plasma source is selected from a group consisting of an ICP, a TCP, a CCP, a DF-CCP, and a microwave.
19. The substate treating apparatus of claim 1 , wherein a light from the electrodeless lamp includes a wavelength which can be absorbed by by-products of a surface of the substrate.
20. A substrate treating apparatus comprising:
a chamber having an inner space;
a plate-shape ion blocker dividing the inner space of the chamber into a first space and a second space below the first space, having a plurality of through holes, and grounded;
a plasma source configured to apply an electric field to the first space;
a first gas supply unit configured to supply a first process gas to the first space, the first process gas excited to a plasma when the first process gas is applied with an electric field of a first intensity at a first pressure atmosphere;
a second gas supply unit configured to supply a second process gas to the second space;
a support unit disposed in the second space and configured to support a substrate to be treated; and
an electrodeless lamp disposed at a center of the ion blocker; and
a controller,
wherein the electrodeless lamp comprises:
an electric field transmissive housing having a discharging space therein; and
a discharging material including a luminous material and filling the discharging space, the discharging space of the housing being pressurized to a second pressure, and the discharging material discharging and luminating when applied with an electric field of a second intensity higher than the first intensity at a second pressure atmosphere, and
the controller is configured to perform:
a first treating for a divergence of an electric field of the first intensity by the plasma source at the first pressure atmosphere while supplying the first process gas from the first gas supply unit and supplying the second process gas from the second gas supply unit to generate a plasma from the first process gas, and treating a substrate with a reaction resultant between radicals of the plasma and the second process; and
a second treating for discharging the electrodeless lamp to heat treat a substrate by stopping the supplying of the first process gas and the second process gas, exhausting the reaction resultant and causing the plasma source to diverge the electric field of the second intensity.