Optoelectronic component
The invention relates to an optoelectronic component, comprising at least one semiconductor emitter having an active region designed for emitting electromagnetic radiation of a first wavelength range. The optoelectronic component also comprises at least one wavelength conversion plate, having a decoupling surface and a lateral surface arranged laterally to same and orientated transverse to same, as well as a substrate on which the semiconductor emitter and the wavelength conversion plate are arranged. The decoupling surface is facing away from the substrate. The semiconductor emitter is designed to irradiate the wavelength conversion plate with electromagnetic radiation on the lateral surface. The wavelength conversion plate is designed to emit a mixed radiation out of the decoupling surface, said mixed radiation comprising at least one portion of the radiation of the first wavelength range and a converted radiation of a second wavelength range.
1. An optoelectronic component comprising,
at least one semiconductor emitter comprising an active region configured to emit electromagnetic radiation of a first wavelength range,
at least one wavelength conversion plate comprising an outcoupling surface and a side surface arranged laterally thereto and aligned transversely thereto, and
a carrier on which the semiconductor emitter and the wavelength conversion plate are arranged, wherein
the outcoupling surface is facing away from the carrier,
the semiconductor emitter is configured to irradiate the wavelength conversion plate with electromagnetic radiation at the side surface, and
the wavelength conversion plate is configured to emit a mixed radiation comprising at least a portion of radiation of the first wavelength range and a converted radiation of a second wavelength range from the outcoupling surface,
wherein the semiconductor emitter comprises an emission cone whose cross-section perpendicular to an axis of the emission cone comprises an elliptical shape, wherein the semiconductor emitter is arranged on the carrier such that the longer ellipse axis is aligned parallel to the main extension direction of the side surface, and
the wavelength conversion plate comprises a plurality of sub regions which are configured to be absorbing or reflecting.
2. The optoelectronic component according to claim 1 , wherein the semiconductor emitter is a laser diode.
3. The optoelectronic component according to claim 1 , in which the side surface is oriented at a Brewster angle to the axis of the emission cone.
4. The optoelectronic component according to claim 1 , wherein an optical coating is applied to the side surface.
5. The optoelectronic component according to claim 1 , in which a light guide is arranged between the semiconductor emitter and the wavelength conversion plate, which guides radiation from the semiconductor emitter onto the wavelength conversion plate.
6. The optoelectronic component according to claim 1 , in which at least two semiconductor emitters are provided for irradiating the side surface.
7. The optoelectronic component according to claim 6 , in which the emission cones of at least two semiconductor emitters at least partially overlap.
8. The optoelectronic component according to claim 1 , in which the wavelength conversion plate comprises at least one absorbing or reflecting sub region for selectively influencing the emission behavior of the wavelength conversion plate.
9. The optoelectronic component according to claim 1 , wherein the wavelength conversion plate comprises conversion particles and scattering particles.
10. The optoelectronic component according to claim 9 , wherein a desired intensity distribution of the mixed radiation over the outcoupling surface of the wavelength conversion plate is adjusted by means of a variation of a scattering effect in the wavelength conversion plate.
11. The optoelectronic component according to claim 9 , wherein a desired intensity and/or color distribution of the mixed radiation over the outcoupling surface of the wavelength conversion plate is adjusted by means of a variation of a conversion effect in the wavelength conversion plate.
12. The optoelectronic component according to claim 1 , wherein the wavelength conversion plate comprises a thickness of 3 μm inclusive to 500 μm inclusive.
13. The optoelectronic component according to claim 1 , wherein the first wavelength range of the semiconductor emitter comprises a region from 380 nm inclusive to 500 nm inclusive.
14. The optoelectronic component according to claim 1 , wherein the carrier is formed with one of the following materials: aluminum nitride, a metal and/or a silicon carbide.
15. The optoelectronic component according to claim 1 , wherein a reflection-increasing coating is arranged between the carrier and the wavelength conversion plate for radiation to be emitted from the wavelength conversion plate.
16. The optoelectronic component according to claim 1 , wherein the wavelength conversion plate comprises a thickness of 70 μm inclusive to 150 μm inclusive.
17. The optoelectronic component according to claim 1 , wherein the first wavelength range of the semiconductor emitter comprises a region from 440 nm inclusive to 460 nm inclusive.