Conductive film, method for manufacturing conductive film, and temperature sensor film
A conductive film ( 102 ) includes: a resin film base ( 50 ) having a hard coat layer ( 6 ) on one main surface of a resin film ( 5 ); an underlying layer ( 20 ) on a hard coat layer-formed surface of the resin film base; and a metal thin film ( 10 ) on the underlying layer. The underlying layer includes at least one layer of inorganic dielectric thin film. The hard coat layer contains first fine particles having an average primary particle diameter of 10 to 100 nm. In a cross section of the hard coat layer, the proportion of an area occupied by the first fine particles is preferably 10% or more.
1. An electroconductive film for a temperature sensor,
the electroconductive film comprising: a resin film base having a hard coat layer disposed on a surface of a resin film; an underlying layer disposed on a hard coat layer-formed surface of the resin film base; and a metal thin-film disposed on the underlying layer, wherein
the underlying layer includes at least one layer of an inorganic dielectric thin-film,
the hard coat layer contains first fine particles having an average primary particle diameter of 10 to 100 nm, and
in a cross section of the hard coat layer, a proportion of an area occupied by the first fine particles is 10% or more.
2. The electroconductive film according to claim 1 , wherein an arithmetic mean roughness of the metal thin-film is 2 to 25 nm or more, wherein the arithmetic mean roughness is determined from a roughness curve having a length of 1 μm.
3. The electroconductive film according to claim 1 , wherein a root mean square roughness of the metal thin-film is 2.5 to 40 nm or less, wherein the root mean square roughness is determined from a roughness curve having a length of 1 μm.
4. The electroconductive film according to claim 1 , wherein the hard coat layer contains second fine particles having an average primary particle diameter of 0.5 to 3.5 μm.
5. The electroconductive film according to claim 4 , wherein a thickness of the hard coat layer is 0.5 to 1 time the average primary particle diameter of the second fine particles.
6. The electroconductive film according to claim 1 , wherein the underlying layer includes at least one layer of silicon-based thin-film.
7. The electroconductive film according to claim 1 , wherein a thickness of the metal thin-film is 20 to 500 nm.
8. The electroconductive film according to claim 1 , wherein the metal thin-film is formed of nickel or a nickel alloy.
9. The electroconductive film according to claim 1 , having a temperature coefficient of resistance of 3,000 ppm/° C. or more.
10. A method for producing the electroconductive film set forth in claim 1 , the method comprising depositing the metal thin-film by a sputtering method.
11. A temperature sensor film comprising:
a resin film base having a hard coat layer disposed on a surface of a resin film;
an underlying layer disposed on a hard coat layer-formed surface of the resin film base; and
a patterned metal thin-film disposed on the underlying layer, wherein
the metal thin-film is patterned to have a thermometric resistor part and a lead part, wherein the thermometric resistor part is patterned into a thin wire and is used for measuring a temperature, and the lead part is connected to the thermometric resistor part and is patterned to have a larger wiring width than that of the thermometric resistor part,
the underlying layer includes at least one layer of inorganic dielectric thin-film,
the hard coat layer contains first fine particles having an average primary particle diameter of 10 to 100 nm, and
in a cross section of the hard coat layer, a proportion of an area occupied by the first fine particles is 10% or more.