Determining an optimal ion energy for plasma processing of a dielectric substrate
View Patent ↗An ion energy for plasma processing of a dielectric substrate is determined by exposing the dielectric substrate to a plasma discharge and applying a pulsed voltage waveform. This waveform includes a sequence of pulses, each having a higher voltage interval and a lower voltage interval having a voltage slope. First pulses of the sequence having differing voltage slopes are generated and applied to the dielectric substrate. For each first pulse, the voltage slope and a corresponding output current are determined. For each first pulse, at least one coefficient of a mathematical relation between the voltage slope and the corresponding output current based solely on the voltage slope and the output current determined for one or more of the first pulses is determined. A test function is applied and an optimal voltage slope value corresponding to the at least one coefficient making the test function true is selected.
1. A method of determining an ion energy for plasma processing of a dielectric substrate, the method comprising:
exposing the dielectric substrate to a plasma discharge,
applying a pulsed voltage waveform generated by a power supply to the dielectric substrate,
wherein the pulsed voltage waveform comprises a sequence of pulses, each pulse comprising a higher voltage interval and a lower voltage interval, wherein the lower voltage interval comprises a voltage slope,
generating first pulses of the sequence having differing voltage slopes between one another and applying the first pulses to the dielectric substrate,
for each one of the first pulses, determining the voltage slope and an output current corresponding to the voltage slope at an output of the power supply,
for each one of the first pulses, determining at least one coefficient of a mathematical relation between the voltage slope and the corresponding output current based solely on the voltage slope and the output current determined for one or more of the first pulses,
applying a test function to the at least one coefficient and selecting a voltage slope value corresponding to the at least one coefficient making the test function true, wherein the test function is true for the voltage slope value representing a narrowest ion energy distribution.
2. The method of claim 1 , wherein the at least one coefficient is an expression consisting of: one or more mathematical operators, one or more values of the voltage slopes and one or more values of the output current.
3. The method of claim 1 , wherein the at least one coefficient is representative of one or more capacitances of an interaction between the plasma discharge and the dielectric substrate, the at least one coefficient being resolved based solely on the voltage slope and output current determined for one or more of the first pulses.
4. The method of claim 1 , wherein the first pulses have monotonically increasing voltage slopes.
5. The method of claim 1 , comprising measuring, for each of the first pulses, at least one of: the respective voltage slope and the output current corresponding to the voltage slope.
6. The method of claim 1 , wherein the test function is configured to determine an extremum of the at least one coefficient.
7. The method of claim 1 , further comprising:
generating second pulses of the sequence, the second pulses having a voltage slope corresponding to the voltage slope value; and
performing plasma processing of the dielectric substrate, comprising applying the second pulses to the dielectric substrate.
8. The method of claim 1 , wherein the plasma processing is selected from one or a combination of: plasma-assisted etching and plasma-assisted deposition.
9. The method of claim 1 , wherein the mathematical relation is a polynomial function between the output current and the voltage slope.
10. The method of claim 9 , wherein the polynomial function is a first degree polynomial I P =kS+b, wherein I P represents output current, S represents voltage slope and wherein the at least one coefficient is at least one of k and b.