Semiconductor device manufacturing method and semiconductor device manufacturing system
A method of manufacturing a semiconductor device, includes forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate; performing a predetermined process on the substrate on which the sacrificial film is formed; and removing the sacrificial film by heating the substrate to depolymerize the polymer, wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
1. A method of manufacturing a semiconductor device, the method comprising:
forming a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate;
performing a predetermined process on the substrate on which the sacrificial film is formed; and
removing the sacrificial film by heating the substrate to depolymerize the polymer,
wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
2. The method of claim 1 , wherein the carbon bonded to the nitrogen atom contained in the isocyanate group is a carbon constituting a hydrocarbon compound having a chain structure or a cyclic structure.
3. The method of claim 1 , wherein the amine is a secondary amine.
4. The method of claim 1 , wherein, in the removing the sacrificial film, the substrate is heated to a temperature in a range of 400 degrees C. to 500 degrees C.
5. The method of claim 1 , wherein the isocyanate contains a structural isomer.
6. The method of claim 1 , wherein the amine contains a structural isomer.
7. The method of claim 1 , wherein the amine is a bifunctional amine having two secondary amine functional groups.
8. The method of claim 1 , wherein the isocyanate is a bifunctional isocyanate having two isocyanate groups.
9. The method of claim 2 , wherein the amine is a secondary amine.
10. The method of claim 9 , wherein, in the removing the sacrificial film, the substrate is heated to a temperature in a range of 400 degrees C. to 500 degrees C.
11. A system for manufacturing a semiconductor device, the system comprising:
a film forming apparatus configured to form a sacrificial film made of a polymer having a urea bond on a substrate by supplying an amine and an isocyanate to a surface of the substrate, wherein the sacrificial film is provided in a specific region of the substrate;
a processing apparatus configured to perform a predetermined process on the substrate on which the sacrificial film is formed; and
a heat treatment apparatus configured to remove the sacrificial film by depolymerizing the polymer by heating the substrate subjected to the predetermined process,
wherein a carbon bonded to a nitrogen atom contained in an isocyanate group of the isocyanate is a secondary or tertiary non-aromatic carbon.
12. The system of claim 11 , wherein the carbon bonded to the nitrogen atom contained in the isocyanate group is a carbon constituting a hydrocarbon compound having a chain structure or a cyclic structure.
13. The system of claim 11 , wherein the amine is a secondary amine.
14. The system of claim 11 , wherein the heat treatment apparatus heats the substrate at a temperature in a range of 400 degrees C. to 500 degrees C.
15. The system of claim 11 , wherein the isocyanate contains a structural isomer.
16. The system of claim 11 , wherein the amine contains a structural isomer.
17. The system of claim 11 , wherein the amine is a bifunctional amine having two secondary amine functional groups.
18. The system of claim 11 , wherein the isocyanate is a bifunctional isocyanate having two isocyanate groups.
19. The system of claim 12 , wherein the amine is a secondary amine.
20. The system of claim 19 , wherein the heat treatment apparatus heats the substrate at a temperature in a range of 400 degrees C. to 500 degrees C.