IP Library Granted Patent US 12,354,530
Granted Patent B2
US 12,354,530 · App. 18/463,914 · Granted Jul 8, 2025

Display device including light-emitting diode backlight unit

Inventors: Byungil Kim (Hwaseong-si, KR); Yangwook Kim (Seoul, KR); Pansoo Kim (Yongin-si, KR); Hyeongtae Kim (Seoul, KR); Sukyun Woo (Hwaseong-si, KR); Jisu Yoon (Hwaseong-si, KR); Hyunji Yoon (Daegu, KR)
Assignee: Samsung Electronics Co., Ltd.
G09G3/32G09G3/3426G09G2300/0814G09G2300/0842G09G2310/08G09G2320/0233G09G2320/0257G09G2320/0633G09G2320/064G09G2320/066
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Quick Facts
Patent No.
US 12,354,530
App. No.
18/463,914
Granted
Jul 8, 2025
Kind
B2
Abstract

A display device may include: a light-emitting diode (LED) backlight unit (BLU), a pixel driving circuit configured to generate a scan signal and an image signal, a pixel circuit configured to generate an output current based on the scan signal and the image signal, and transmit the output current to the LED BLU, the pixel circuit including, a first transistor connected between an input pin and a node, the input pin configured to receive the image signal, the first transistor including a gate terminal configured to receive the scan signal, a second transistor connected between the node and a ground terminal, the second transistor including a gate terminal connected to the node, a third transistor connected between the node and a gate node, a fourth transistor configured to generate the output current according to a voltage of the gate node, and a capacitor connected to the gate node.

Claims (54)

1. An integrated circuit comprising:

a first pin configured to receive an image signal;

a second pin configured to receive a scan signal;

a driver transistor configured to generate an output current according to a voltage of a gate node based on the scan signal and the image signal; and

an overvoltage detection circuit configured to generate a detection signal in response to a voltage of an output pin exceeding a reference voltage, and

the overvoltage detection circuit including an off transistor configured to block the output current by discharging the gate node based on the detection signal.

2. The integrated circuit of claim 1 , wherein the overvoltage detection circuit further includes:

a logic gate configured to control the off transistor by receiving an off control signal and the detection signal.

3. The integrated circuit of claim 1 , wherein the integrated circuit further includes:

a first transistor connected between the first pin and a node, the first transistor including a gate terminal configured to receive the scan signal;

a second transistor connected between the node and a ground terminal, the second transistor including a gate terminal connected to the node; and

a third transistor connected between the node and the gate node.

4. The integrated circuit of claim 1 , wherein the overvoltage detection circuit further includes:

a detection transistor including a gate terminal configured to receive the voltage of the output pin.

5. The integrated circuit of claim 4 , wherein

the overvoltage detection circuit further includes an inverter connected to the detection transistor; and

the detection transistor is a P-type transistor.

6. The integrated circuit of claim 5 wherein the reference voltage is obtained by subtracting a threshold voltage of the detection transistor from an internal voltage received by the detection transistor.

7. The integrated circuit of claim 4 , wherein the overvoltage detection circuit further includes:

a fourth transistor connected between the output pin and the driver transistor; and

a fifth transistor connected between the detection transistor and a ground terminal.

8. An integrated circuit comprising:

a first pin configured to receive an image signal;

a second pin configured to receive a scan signal;

a driver transistor configured to generate an output current based on the scan signal and the image signal; and

a de-ghost transistor configured to discharge a gate node of the driver transistor.

9. The integrated circuit of claim 8 wherein

the de-ghost transistor is configured to control the gate node in response to a de-ghost signal and the scan signal.

10. The integrated circuit of claim 9 wherein the de-ghost signal is synchronized with the scan signal.

11. The integrated circuit of claim 9 , wherein the integrated circuit further includes:

an AND gate configured to receive the de-ghost signal and the scan signal; and

the de-ghost transistor is configured to switch on based on an output signal of the AND gate.

12. The integrated circuit of claim 9 , wherein the integrated circuit further includes:

a third pin configured to receive the de-ghost signal.

13. The integrated circuit of claim 8 , wherein the integrated circuit further includes:

a first transistor connected between the first pin a node, the first transistor including a gate terminal configured to receive the scan signal;

a second transistor connected between the node and a ground terminal, the second transistor including a gate terminal connected to the node; and

a third transistor connected between the node and the gate node, the third transistor including a gate terminal configured to receive the scan signal.

14. The integrated circuit of claim 8 , wherein the integrated circuit further includes:

a first transistor connected between the first pin and a node, the first transistor including a gate terminal configured to receive the scan signal;

a second transistor connected between the node and a ground terminal, the second transistor including a gate terminal connected to the gate node; and

a third transistor connected between the node and the gate node, the third transistor including a gate terminal configured to receive the scan signal.

15. An integrated circuit comprising:

an amplifier configured to amplify an input voltage;

a transistor configured to generate an image signal based on an output signal of the amplifier;

a first pin configured to output a scan signal; and

a boosting circuit configured to provide a boosting current through a second pin outputting the image signal in response to a boosting signal,

wherein a period during which the boosting current is provided ends before an on-period of the scan signal ends.

16. The integrated circuit of claim 15 , wherein the period is included in the on-period of the scan signal.

17. The integrated circuit of claim 15 , wherein the boosting circuit comprises:

a variable current source; and

a switching transistor connected to the variable current source.

18. The integrated circuit of claim 17 , wherein the boosting circuit is further configured to control the switching transistor to adjust the period.

19. The integrated circuit of claim 17 , wherein the boosting circuit is further configured to control the variable current source to adjust a magnitude of the boosting current.

Priority Claims (2)
KR 10-2020-0170756 · Dec 8, 2020 · national
KR 10-2021-0055034 · Apr 28, 2021 · national
Continuity (2)
Continuation 17537950 · Nov 30, 2021
Related Publication 20230419887A1 · Dec 28, 2023
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