Semiconductor device including vertical channel pattern surrounded by protection pattern
A semiconductor device includes a memory cell region positioned on a substrate and comprising a real memory cell region and a dummy memory cell region; and a connection region extending in a first direction parallel to a surface of the substrate in the memory cell region. The dummy memory cell region includes a plurality of dummy vertical channel structures spaced apart from each other. Each of the plurality of dummy vertical channel structures includes a vertical channel pattern in contact with the substrate while penetrating a stack structure comprising a plurality of insulating layers and a plurality of gate electrodes repeatedly stacked in a third direction perpendicular to a surface of the substrate. A protection pattern is disposed to surround the vertical channel pattern of at least one of the plurality of dummy vertical channel structures.
1. A semiconductor device comprising:
a memory cell region on a substrate and comprising a real memory cell region and a dummy memory cell region; and
a connection region extending with the memory cell region in a first direction that is parallel to a surface of the substrate,
wherein the dummy memory cell region comprises a plurality of dummy vertical channel structures spaced apart from each other,
each of the plurality of dummy vertical channel structures comprises a vertical channel pattern in contact with the substrate and penetrating a stack structure comprising a plurality of insulating layers and a plurality of gate electrodes repeatedly stacked in a third direction that is perpendicular to a surface of the substrate, and
a protection pattern surrounds, and is disposed on an outermost side surface of, the vertical channel pattern of at least one of the plurality of dummy vertical channel structures.
2. The semiconductor device of claim 1 , wherein the dummy memory cell region is in contact with the real memory cell region.
3. The semiconductor device of claim 1 , wherein the plurality of dummy vertical channel structures are arranged in a zigzag in the first direction and in a second direction that is horizontal to the surface of the substrate and is perpendicular to the first direction.
4. The semiconductor device of claim 1 , wherein the vertical channel pattern comprises an epitaxial semiconductor pattern on the substrate.
5. The semiconductor device of claim 1 , wherein the protection pattern is in contact with a lowermost gate electrode on the substrate.
6. The semiconductor device of claim 1 , wherein the protection pattern is on an edge part of the dummy memory cell region apart from the real memory cell region.
7. The semiconductor of claim 1 , wherein the protection pattern comprises a first protection pattern and a second protection pattern respectively on an upper edge part of the dummy memory cell region and on a lower edge part of the dummy memory cell region, the upper edge part and the lower edge part apart from the real memory cell region.
8. The semiconductor device of claim 7 , wherein the first protection pattern and the second protection pattern are apart from each other in a second direction parallel to a surface of the substrate and perpendicular to the first direction in the dummy memory cell region.
9. The semiconductor device of claim 8 , wherein the first protection pattern and the second protection pattern are aligned in the second direction.
10. The semiconductor device of claim 8 , wherein the first protection pattern and the second protection pattern are shifted from each other in the first direction so as not to be aligned in the second direction.
11. The semiconductor device of claim 1 , wherein the protection pattern surrounds two vertical channel patterns included in two vertical channel structures adjacent to each other.
12. The semiconductor device of claim 1 , wherein the protection pattern surrounds two vertical channel patterns included in two dummy vertical channel structures adjacent to each other in the first direction and in a second direction that is horizontal to the surface of the substrate and is perpendicular to the first direction.
13. A semiconductor device comprising:
a memory cell region on a substrate and comprising a real memory cell region and a dummy memory cell region; and
a connection region extending with the memory cell region in a first direction parallel to a surface of the substrate,
wherein the dummy memory cell region comprises first and second dummy vertical channel structures spaced apart from each other,
the first and second dummy vertical channel structures respectively comprise first and second vertical channel patterns in contact with the substrate and penetrating a stack structure comprising a plurality of insulating layers and a plurality of gate electrodes repeatedly stacked in a third direction perpendicular to a surface of the substrate,
a protection pattern surrounds the first vertical channel pattern, and a gate oxide layer surrounds the second vertical channel pattern, and
the protection pattern has a shape different than that of the gate oxide layer.
14. The semiconductor device of claim 13 , wherein the dummy memory cell region is between the real memory cell region and the connection region in the first direction.
15. The semiconductor device of claim 13 , wherein the first vertical channel pattern and the second vertical channel pattern comprise epitaxial semiconductor patterns on the substrate.
16. The semiconductor device of claim 13 , wherein a thickness of the protection pattern is greater than a thickness of the gate oxide layer.
17. The semiconductor device of claim 13 , wherein the protection pattern is on an edge part of the dummy memory cell region apart from the real memory cell region.
18. A semiconductor device comprising:
a memory cell region on a substrate and comprising a real memory cell region and a dummy memory cell region; and
a connection region extending with the memory cell region in a first direction parallel to a surface of the substrate,
wherein the dummy memory cell region comprises first and second dummy vertical channel structures spaced apart from each other,
the first and second dummy vertical channel structures respectively comprise first and second vertical channel patterns in a first recess region and a second recess region recessed from a surface of the substrate to an upper surface of the substrate, the first and second vertical channel patterns penetrating a stack structure comprising a plurality of insulating layers and a plurality of gate electrodes repeatedly stacked in a third direction perpendicular to the surface of the substrate,
a protection pattern surrounds the first vertical channel pattern without invading both outermost side surfaces of the first vertical channel pattern, and
the semiconductor device includes a gate oxide layer that invades both side surfaces of the second vertical channel pattern.
19. The semiconductor device of claim 18 , wherein the protection pattern and the gate oxide layer are in contact with a lowermost gate electrode on the substrate.
20. The semiconductor device of claim 18 , wherein both side surfaces of the first vertical channel pattern in contact with the protection pattern are vertical surfaces in the third direction, and
both side surfaces of the second vertical channel pattern in contact with the gate oxide layer are curved surfaces in the third direction.