Image display device manufacturing method and image display device
An image display device manufacturing method includes: providing a first substrate that includes: a circuit including a circuit element formed on a light-transmitting substrate, and a first insulating film covering the circuit; forming, on the first insulating film, a layer including graphene; forming, on the layer v graphene, a semiconductor layer including a light-emitting layer; etching the semiconductor layer to form a light-emitting element; forming a second insulating film covering the layer including graphene, the light-emitting element, and the first insulating film; forming a via passing through the first insulating film and the second insulating film; and electrically connecting the light-emitting element and the circuit element through the via at a light-emitting surface facing a surface of the light-emitting element on a first insulating film side.
1. An image display device manufacturing method comprising:
providing a first substrate that comprises:
a circuit comprising a circuit element formed on a light-transmitting substrate, and
a first insulating film covering the circuit;
forming, on the first insulating film, a layer comprising graphene;
forming, on the layer comprising graphene, a semiconductor layer comprising a light-emitting layer;
etching the semiconductor layer to form a light-emitting element having a first surface that contacts the layer comprising graphene, and a second surface opposite the first surface, the second surface including a light-emitting surface of the light-emitting element;
forming a second insulating film covering the layer comprising graphene, the light-emitting element, and the first insulating film;
forming a via passing through the first insulating film and the second insulating film; and
electrically connecting the light-emitting element and the circuit element through the via at the light-emitting surface of the light-emitting element.
2. The image display device manufacturing method according to claim 1 , wherein, in the step of forming the semiconductor layer, the semiconductor layer is grown by sputtering.
3. The image display device manufacturing method according to claim 1 , wherein:
a second substrate having flexibility is provided between the light-transmitting substrate and the circuit element; and
the method further comprises, after the step of forming the semiconductor layer, removing the light-transmitting substrate.
4. The image display device manufacturing method according to claim 1 , wherein the light-transmitting substrate comprises a glass substrate.
5. The image display device manufacturing method according to claim 1 , further comprising:
exposing the light-emitting surface.
6. The image display device manufacturing method according to claim 5 , further comprising:
forming a light-transmitting electrode on the light-emitting surface that is exposed.
7. The image display device manufacturing method according to claim 1 , wherein the semiconductor layer comprises a gallium nitride compound semiconductor.
8. The image display device manufacturing method according to claim 1 , further comprising:
forming a wavelength conversion member on the light-emitting element.