IP Library › Granted Patent US 12,358,843
Granted Patent B2
US 12,358,843 · App. 17/787,031 · Granted Jul 15, 2025

Cutting tool

Inventors: Tatsuya Toda (Nagoya, JP); Takuya Furuhashi (Nagoya, JP); Ryoji Toyoda (Nagoya, JP)
Assignee: NTK CUTTING TOOLS CO., LTD.
C04B35/597B23B27/148C04B35/6261C04B35/62695C04B35/638C04B35/64C04B2235/3225C04B2235/3869C04B2235/3886C04B2235/5445C04B2235/604C04B2235/6562C04B2235/6567C04B2235/658C04B2235/87
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Quick Facts
Patent No.
US 12,358,843
App. No.
17/787,031
Granted
Jul 15, 2025
Kind
B2
Abstract

A cutting tool ( 1 ) formed of a silicon nitride-based sintered body ( 2 ) including a matrix phase ( 3 ), a hard phase ( 4 ), and a grain boundary phase ( 10 ) in which a glass phase ( 11 ) and a crystal phase ( 12 ) exist. The sintered body ( 2 ) contains yttrium in an amount of 5.0 wt % to 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase ( 4 ) in an amount of 5.0 wt % to 25.0 wt %. In an X-ray diffraction peak, a halo pattern appears at 2θ ranging from 25° to 35° in an internal region of the sintered body ( 2 ). A ratio B/A of a maximum peak intensity B to a maximum peak intensity A satisfies 0.11≤B/A≤0.40 . . . Expression (1) in a surface region of the sintered body ( 2 ), and satisfies 0.00≤B/A≤0.10 . . . Expression (2) in the internal region of the sintered body ( 2 ).

Claims (23)

1. A cutting tool formed of a silicon nitride-based sintered body that includes a matrix phase formed of silicon nitride or Sialon, a hard phase, and a grain boundary phase in which a glass phase and a crystal phase exist,

wherein the silicon nitride-based sintered body

contains yttrium such that a content of the yttrium is not less than 5.0 wt % and not greater than 15.0 wt % in terms of an oxide, and contains titanium nitride as the hard phase such that a content of the titanium nitride is not less than 5.0 wt % and not greater than 25.0 wt %;

in an X-ray diffraction peak of the silicon nitride-based sintered body,

a halo pattern appears at 2θ ranging from 25° to 35° in an internal region that is deep from a surface of the silicon nitride-based sintered body by a distance of greater than 1.0 mm;

wherein regarding a maximum peak intensity A of the matrix phase and a maximum peak intensity B of the crystal phase in the grain boundary phase as defined below, a ratio B/A of the maximum peak intensity B to the maximum peak intensity A

satisfies a relationship represented by Expression (1) in a surface region distant from the surface of the silicon nitride-based sintered body by 0.2 mm or less, and

satisfies a relationship represented by Expression (2) in the internal region of the silicon nitride-based sintered body,

0.11≤ B/A≤ 0.40  Expression (1)

0.00≤ B/A< 0.10  Expression (2),

when the matrix phase is formed of a single kind of phase, the maximum peak intensity A is obtained as a maximum peak intensity of the phase, and, when the matrix phase is formed of a plurality of kinds of phases, the maximum peak intensity A is obtained as a sum of maximum peak intensities of the respective phases, and

when the crystal phase in the grain boundary phase is formed of a single kind of phase, the maximum peak intensity B is obtained as a maximum peak intensity of the phase, and, when the crystal phase in the grain boundary phase is formed of a plurality of kinds of phases, the maximum peak intensity B is obtained as a sum of maximum peak intensities of the respective phases; and

wherein when a cross-section of the silicon nitride-based sintered body is observed,

a proportion of a number of particles having a maximum diameter of not greater than 0.5 μm among entire particles of the silicon nitride or the Sialon is not less than 50%, and

a proportion of a number of particles having an aspect ratio of not less than 1.5 among particles, of the silicon nitride or the Sialon, having a minimum diameter of not less than 0.5 μm is not less than 55%.

2. The cutting tool according to claim 1 , wherein

when a cross-section of the silicon nitride-based sintered body is observed,

in the surface region of the silicon nitride-based sintered body, a proportion Cs of an area occupied by the grain boundary phase is not less than 7.0 area % and not greater than 14.0 area % when an area of an entire visual field is 100 area %,

in the internal region of the silicon nitride-based sintered body, a proportion Ci of an area occupied by the grain boundary phase is not less than 3.0 area % and not greater than 9.0 area % when an area of an entire visual field is 100 area %, and

a relationship represented by Expression (3) is satisfied:

Cs>Ci   Expression (3).

3. The cutting tool according to claim 1 , wherein a halo pattern does not appear at 2θ ranging from 25° to 35° in an X-ray diffraction peak of the surface region of the silicon nitride-based sintered body.

4. The cutting tool according to claim 2 , wherein a halo pattern does not appear at 2θ ranging from 25° to 35° in an X-ray diffraction peak of the surface region of the silicon nitride-based sintered body.

Assignments (2)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 13, 2023
From: NGK SPARK PLUG CO., LTD.
To: NTK CUTTING TOOLS CO., LTD.
Reel/Frame 063935/0240 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 17, 2022
From: TODA, TATSUYA; FURUHASHI, TAKUYA; TOYODA, RYOJI
To: NGK SPARK PLUG CO., LTD.
Reel/Frame 060240/0020 →
Priority Claims (1)
JP 2019-230148 · Dec 20, 2019 · national
Continuity (1)
Related Publication 20230018290A1 · Jan 19, 2023
References Cited (10)
US 4699890A · Matsui · 1987 [cited by examiner]
US 5316856A · Suzuki · 1994 [cited by examiner]
US 20080167174A1 · Osthols · 2008 [cited by examiner]
US 20170334790A1 · Chun · 2017 [cited by examiner]
EP 514622A1 · 1992 [cited by examiner]
EP 1043292A1 · 2000 [cited by examiner]
JP 2275763A · 1990 [cited by applicant]
JP 2000354901A · 2000 [cited by applicant]
JP 2005231928A · 2005 [cited by applicant]
International Search Report for PCT/JP2020/040346 dated, Dec. 28, 2020 (PCT/ISA/210). [cited by applicant]