Quantum dots, and electronic devices and electronic equipments including same
A quantum dot including a core and a shell disposed on an outer surface of the core. The core includes a first semiconductor nanocrystal including a Group II-VI compound. The shell includes a second semiconductor nanocrystal. An effective mass of the second semiconductor nanocrystal is about 0.5 times to about 2.0 times an effective mass of the first semiconductor nanocrystal and the quantum dot does not include cadmium, lead, mercury, or a combination thereof.
1. A quantum dot polymer composite, comprising
a polymer matrix; and
quantum dots dispersed in the polymer matrix;
wherein the quantum dots comprise
a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e is present in a mole ratio of greater than or equal to about 0.3:1 and less than or equal to about 1.0:1 relative to a total number of moles in the quantum dots,
wherein the quantum dots do not comprise cadmium, lead, mercury, or a combination thereof.
2. The quantum dot polymer composite of claim 1 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises a Group II-VI compound, a Group III-V compound, a Group III-VI compound, or a combination thereof.
3. The quantum dot polymer composite of claim 1 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises a compound M 4 X 4 , wherein M 4 is Zn, Ga, or a combination thereof, and X 4 is S, Se, Te, or a combination thereof.
4. The quantum dot polymer composite of claim 1 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises zinc selenide, zinc telluride, gallium sulfide, or a combination thereof.
5. The quantum dot polymer composite of claim 1 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e is not a binary element compound of zinc sulfide.
6. The quantum dot polymer composite of claim 1 , wherein
the quantum dots comprise
a core comprising a semiconductor nanocrystal; and
n shells disposed outside the core,
wherein n is an integer greater than or equal to 1, and
wherein at least one of the n shells comprises the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e .
7. The quantum dot polymer composite of claim 6 , wherein the core comprising the semiconductor nanocrystal comprises a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e .
8. The quantum dot polymer composite of claim 6 , wherein the core comprising the semiconductor nanocrystal comprises a zinc chalcogenide compound.
9. The quantum dot polymer composite of claim 6 , wherein
n is an integer greater than or equal to 2, and
a number m of the n shells comprise a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e , wherein m is an integer greater than or equal to n/2.
10. The quantum dot polymer composite of claim 6 , wherein the quantum dots further comprise a shell comprising a binary element compound of zinc sulfide.
11. An electronic device comprising
a quantum dot comprising
a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e is present in a mole ratio of greater than or equal to about 0.3:1 and less than or equal to about 1.0:1 relative to a total number of moles in the quantum dot,
wherein the quantum dot does not comprise cadmium, lead, mercury, or a combination thereof.
12. The electronic device of claim 11 , wherein the electronic device comprises
a light source; and
a light emitting element,
wherein the light emitting element comprises the quantum dot, and
wherein the light source is configured to provide incident light to the light emitting element.
13. The electronic device of claim 11 , wherein
the electronic device comprises
a first electrode;
a second electrode facing the first electrode; and
an active layer between the first electrode and second electrode,
wherein the active layer comprises the quantum dot.
14. The electronic device of claim 11 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises a Group II-VI compound, a Group III-V compound, a Group III-VI compound, or a combination thereof.
15. The electronic device of claim 11 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises a compound M 4 X 4 , wherein M 4 is Zn, Ga, or a combination thereof, and X 4 is S, Se, Te, or a combination thereof.
16. The electronic device of claim 11 , wherein the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e comprises zinc selenide, zinc telluride, gallium sulfide, or a combination thereof.
17. The electronic device of claim 11 , wherein
the quantum dot comprises
a core comprising a semiconductor nanocrystal; and
n shells disposed outside the core,
wherein n is an integer greater than or equal to 1, and
wherein at least one of the n shells comprises the semiconductor compound having the electron effective mass of less than or equal to about 0.34 m e .
18. The electronic device of claim 17 , wherein the core comprising the semiconductor nanocrystal comprises a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e .
19. The electronic device of claim 17 , wherein the core comprising the semiconductor nanocrystal comprises a zinc chalcogenide compound.
20. An electronic apparatus comprising a quantum dot comprising
a semiconductor compound having an electron effective mass of less than or equal to about 0.34 m e is present in a mole ratio of greater than or equal to about 0.3:1 and less than or equal to about 1.0:1 relative to a total number of moles in the quantum dot,
wherein the quantum dot does not comprise cadmium, lead, mercury, or a combination thereof.