Package structure, semiconductor device and method of fabricating the same
A semiconductor device includes an optical connector element and an optical coupler. The optical connector element includes a base structure, a first polymer via and a cladding layer. The base structure has a first surface and a second surface opposite to the first surface. The first polymer via passes through the base structure from the first surface to the second surface. The cladding layer is surrounding the first polymer via, wherein a refractive index of the cladding layer is different than a refractive index of the first polymer via. The optical coupler is disposed over the optical connector element, wherein the optical coupler receives optical signals from the first polymer via.
1. A semiconductor device, comprising:
an optical connector element, comprising:
a base structure having a first surface and a second surface opposite to the first surface;
a first polymer via passing through the base structure from the first surface to the second surface;
a cladding layer surrounding the first polymer via, wherein a refractive index of the cladding layer is different than a refractive index of the first polymer via;
an oxide layer surrounding the cladding layer and the first polymer via, wherein the oxide layer extends from the first surface to the second surface; and
an optical coupler disposed over the optical connector element, wherein the optical coupler receives optical signals from the first polymer via.
2. The semiconductor device according to claim 1 , wherein the cladding layer is a polymeric cladding layer extending along sidewalls of the first polymer via from the first surface to the second surface.
3. The semiconductor device according to claim 1 , further comprising:
a second polymer via passing through the base structure from the first surface to the second surface; and
a second cladding layer surrounding the second polymer via, wherein a refractive index of the second cladding layer is different than a refractive index of the second polymer via.
4. The semiconductor device according to claim 3 , further comprising:
a polymer connecting structure disposed over the first surface of the base structure and connecting the first polymer via to the second polymer via; and
optical lens disposed on the first polymer via and the second polymer via over the second surface of the base structure.
5. The semiconductor device according to claim 1 , wherein the first polymer via comprises a first end and a second end opposite to the second end, and the second end is facing the optical coupler, and an optical lens or an optical fiber is attached to the first end of the first polymer via.
6. The semiconductor device according to claim 1 , wherein the first polymer via comprises a first end and a second end opposite to the second end, and the second end is facing the optical coupler, and a prism structure is attached to the first end of the first polymer via.
7. The semiconductor device according to claim 1 , further comprising:
an electronic die disposed aside the optical connector element; and
an insulating encapsulant, encapsulating the electronic die and the optical connector element.
8. A package structure, comprising:
a photonic die comprising conductive posts, an optical coupler, and a polymer layer covering the conductive posts and the optical coupler;
an optical connector element disposed over the photonic die, wherein the optical connector element comprises:
an optical via arranged in alignment with the optical coupler;
a polymeric cladding layer covering sidewalls of the optical via; and
a base structure surrounding the optical via and the polymeric cladding layer;
a redistribution layer, electrically connected to the conductive posts of the photonic die.
9. The package structure according to claim 8 , wherein the optical connector element is attached to the photonic die by an optical gel.
10. The package structure according to claim 8 , further comprising an insulating encapsulant encapsulating the optical connector element.
11. The package structure according to claim 10 , further comprising a semiconductor die embedded in the insulating encapsulant and electrically connected to the redistribution layer.
12. The package structure according to claim 10 , further comprising a second insulating encapsulant encapsulating the photonic die, wherein the first insulating encapsulant and the second insulating encapsulant are disposed on opposing sides of the redistribution layer.
13. The package structure according to claim 8 , further comprising an oxide layer embedded in the base structure and surrounding the polymeric cladding layer and the optical via.
14. The package structure according to claim 8 , further comprising an optical lens or an optical fiber attached on the optical via of the optical connector element.
15. The package structure according to claim 8 , wherein the optical via and the polymeric cladding layer are made of materials having different refractive index.
16. A method of fabricating a semiconductor device, comprising:
forming an optical connector element, comprising:
providing a base structure;
etching the base structure to form an opening;
forming an oxide layer in the opening;
forming a cladding layer in the opening;
forming a first polymer via in the opening, wherein the first polymer via is surrounded by the cladding layer, and a refractive index of the cladding layer is different than a refractive index of the first polymer via, and the oxide layer surrounds the cladding layer and the first polymer via;
performing a planarization process on a first surface of the base structure to reveal a first end of the first polymer via;
reducing a thickness of the base structure from a second surface of the base structure to reveal a second end of the first polymer via, wherein the first polymer via passes through the base structure from the first surface to the second surface, and the oxide layer extends from the first surface to the second surface, wherein the first surface is opposite to the second surface;
disposing the optical connector element over an optical coupler, wherein the optical coupler receives optical signals from the first polymer via.
17. The method according to claim 16 ,
wherein the planarization process removes a first portion of the oxide layer, and reducing the thickness of the base structure from the second surface further removes a second portion of the oxide layer.
18. The method according to claim 16 , further comprising:
etching the base structure to form a second opening;
forming a second cladding layer in the second opening;
forming a second polymer via in the opening, wherein the second polymer via is surrounded by the second cladding layer, and a refractive index of the second cladding layer is different than a refractive index of the second polymer via;
performing the planarization process to reveal the first end of the first polymer via and a first end of the second polymer via; and
reducing the thickness of the second surface of the base structure to reveal the second end of the first polymer via and a second end of the second polymer via.
19. The method according to claim 18 , further comprising:
forming a polymer connecting structure over the first surface of the base structure for connecting the first polymer via to the second polymer via; and
providing optical lens on the first polymer via and the second polymer via over the second surface of the base structure.
20. The method according to claim 16 , further comprising:
providing an optical fiber or an optical lens to the first end of the first polymer via, and wherein the second end is facing the optical coupler.