Granted Patent B2

US 12,361,995 · App. 17/956,938 · Granted Jul 15, 2025

Inventors: Pouya Hashemi (Purchase, NY); Christopher Safranski (Yorktown Heights, NY)

Assignee: International Business Machines Corporation

G11C11/161G11C11/02G11C11/08G11C11/15G11C11/16G11C11/5607H10B61/00H10N50/01H10N50/10H10N50/80

Abstract

Claims (63)

1. A magnetic random access memory (MRAM) apparatus comprising:

a magnetic tunnel junction (MTJ) stack;

a spin-orbit-torque (SOT) layer underlying the MTJ stack, wherein the SOT layer has a stepped profile; and

a dielectric pillar underlying the SOT layer and the MTJ stack,

wherein the SOT layer covers the dielectric pillar and has a generally uniform thickness.

2. The apparatus of claim 1 ,

wherein the MTJ stack comprises a pinned layer, a barrier layer, and a free layer,

wherein each of the pinned layer, the barrier layer, and the free layer has horizontal edges, and

wherein edges of the barrier layer are free of metal bridges.

3. The apparatus of claim 2 , wherein the edges of the MTJ stack protrude outward beyond a periphery of the dielectric pillar.

4. The apparatus of claim 1 , wherein the SOT layer comprises:

an upper step directly under the MTJ stack and overlying the dielectric pillar;

lower steps below and to either side of the upper step; and

risers connecting the lower steps to the upper step.

5. The apparatus of claim 4 ,

wherein the dielectric pillar comprises spacers at a top end thereof, and

wherein the spacers impose a convex shape on the risers.

6. The apparatus of claim 4 ,

wherein the dielectric pillar comprises spacers at a top end thereof, and

wherein the spacers impose a concave shape on the risers.

7. The apparatus of claim 4 , wherein:

the lower steps of the SOT layer have upper surfaces that are flush with an upper surface of the dielectric pillar, and

the upper step of the SOT layer is coextensive with the MTJ stack.

8. The apparatus of claim 7 , wherein the lower steps of the SOT layer are of a same thickness as the upper step of the SOT layer.

9. The apparatus of claim 8 , wherein the risers of the SOT layer are of a same thickness as the lower steps and the upper step.

10. The apparatus of claim 4 , wherein the upper and lower steps and the risers all are composed of a same material.

11. The apparatus of claim 1 , further comprising:

a dielectric base that surrounds the dielectric pillar; and

dielectric bars that protrude from the dielectric base at edges of the SOT layer.

12. A method comprising:

forming a dielectric base of a first dielectric material and a dielectric pillar of a second dielectric material, wherein the dielectric pillar protrudes from the dielectric base;

forming a first intermediate structure by depositing a first layer of conductive material onto the dielectric base, sufficiently thick to cover the pillar and the base;

forming a planarized structure by planarizing the first intermediate structure to reveal the pillar; and

depositing a second layer of spin-orbit-torque metal onto the planarized structure.

13. The method of claim 12 , further comprising:

depositing additional layers onto the second layer of spin-orbit-torque metal, wherein the additional layers comprise a free layer, a barrier layer, and a pinned layer; and

forming a magnetic tunnel junction stack atop the pillar, without bridges on edges of the barrier layer, by etching the additional layers and the second layer of spin-orbit-torque metal around the pillar.

14. The method of claim 13 , further comprising:

etching through the second layer of spin-orbit-torque metal down to the first layer of conductive material.

15. The method of claim 14 , further comprising:

etching into the first layer of conductive material.

16. The method of claim 13 , wherein etching the additional layers and the second layer of spin-orbit-torque metal comprises:

etching the additional layers with at least one first ion; and

etching the second layer of spin-orbit-torque metal with a second ion that is different than any of the at least one first ions.

17. The method of claim 13 , further comprising:

before depositing the first layer of spin-orbit-torque metal, forming spacers at a protruding upper end of the pillar.

18. The method of claim 17 , wherein forming spacers comprises forming convex spacers.

19. The method of claim 17 , wherein forming spacers comprises forming concave spacers.

20. A magnetic random access memory (MRAM) apparatus comprising:

a magnetic tunnel junction (MTJ) stack; and

a spin-orbit-torque (SOT) layer underlying the MTJ stack,

wherein the SOT layer has an upper step covering an area directly under the MTJ stack and a lower step adjacent to and below the upper step,

wherein the upper step comprises spin-orbit-torque metal, and

wherein the SOT layer has a generally uniform thickness.

21. The apparatus of claim 20 , wherein the lower step of the SOT layer comprises spin-orbit-torque metal.

22. The apparatus of claim 20 , wherein the upper and lower steps of the SOT layer are of uniform thickness.

23. The apparatus of claim 20 , wherein the upper step of the SOT layer is coextensive with the MTJ stack.

24. The apparatus of claim 20 , further comprising:

a dielectric base that underlies the lower step of the SOT layer; and

a dielectric pillar that protrudes from the dielectric base beneath the MTJ stack and the upper step of the SOT layer.

25. The apparatus of claim 24 , further comprising:

dielectric bars that protrude from the dielectric base at edges of the lower step of the MTJ stack.

26. The apparatus of claim 24 , wherein the upper step of the SOT layer and the MTJ stack extend laterally beyond a periphery of the dielectric pillar.

Assignments (1)

Continuity (1)

References Cited (23)