Semiconductor device including through die via
View Patent ↗A semiconductor device includes a first die including a patterned conductive pad, a second die stacked over and electrically coupled to the first die, a bonding dielectric layer between the first and second dies, and a through die via penetrating through the first die and passing through the patterned conductive pad and the bonding dielectric layer. The second die includes a conductive pad directly over the patterned conductive pad. The bonding dielectric layer bonds the patterned conductive pad to the conductive pad, and the through die via directly lands on the conductive pad.
1. A semiconductor device, comprising:
a first die comprising a patterned conductive pad;
a second die stacked over and electrically coupled to the first die, the second die comprising a conductive pad directly over the patterned conductive pad;
a bonding dielectric layer between the first and second dies and bonding the patterned conductive pad to the conductive pad; and
a through die via penetrating through the first die, passing through the patterned conductive pad and the bonding dielectric layer, and directly landing on the conductive pad.
2. The semiconductor device of claim 1 , wherein the through die via is in physical, lateral, and electrical contact with the patterned conductive pad.
3. The semiconductor device of claim 1 , wherein a sidewall of the through die via has a stepped profile.
4. The semiconductor device of claim 1 , wherein the patterned conductive pad of the first die comprises a surface facing the second die and an entirety of the surface is physically coupled to the bonding dielectric layer.
5. The semiconductor device of claim 1 , wherein the patterned conductive pad comprises a through hole, a portion of the bonding dielectric layer extends into the through hole to laterally separate the through die via from the patterned conductive pad.
6. The semiconductor device of claim 5 , wherein the through die via is in physical, vertical, and electrical contact with the patterned conductive pad.
7. The semiconductor device of claim 1 , wherein a size of the first die is smaller than that of the second die.
8. The semiconductor device of claim 7 , further comprising:
an encapsulant disposed on the second die and laterally covering the first die.
9. The semiconductor device of claim 8 , wherein the encapsulant extends to laterally cover the second die.
10. The semiconductor device of claim 1 , wherein the first die further comprises a substrate on which the patterned conductive pad is disposed, the through die via comprises a first portion embedded in the substrate and a second portion passing through the patterned conductive pad and narrower than the first portion.
11. The semiconductor device of claim 10 , wherein the through die via further comprises a third portion passing through the bonding dielectric layer narrower than the second portion.
12. A semiconductor device, comprising:
a first die comprising a first side, a second side opposite to the first side, a first conductive pad disposed on the second side and comprising a through hole;
a second die stacked over the second side of the first die and comprising a second conductive pad over the first conductive pad;
a bonding dielectric layer between the first and second dies and separating the first conductive pad from the second conductive pad in a stacking direction of the first and second dies; and
a through die via extending from the first side to the second side of the first die, passing through the through hole of the first conductive pad and the bonding dielectric layer, and landing on the second conductive pad.
13. The semiconductor device of claim 12 , wherein the through die via is in physical, lateral, and electrical contact with the first conductive pad.
14. The semiconductor device of claim 12 , wherein the first conductive pad comprises a surface facing the second die and an entirety of the surface is physically coupled to the bonding dielectric layer.
15. The semiconductor device of claim 12 , wherein a portion of the bonding dielectric layer extends into the through hole of the first conductive pad to laterally separate the through die via from the first conductive pad.
16. The semiconductor device of claim 15 , wherein the through die via is in physical, vertical, and electrical contact with the first conductive pad.
17. The semiconductor device of claim 12 , wherein a size of the first die is smaller than that of the second die.
18. A semiconductor device, comprising:
a first die comprising a first conductive pad with a through hole;
a second die stacked over the first die and comprising a second conductive pad directly over the first conductive pad;
a bonding dielectric layer between the first and second dies, the bonding dielectric layer physically and fully coupled to a surface of the first conductive pad facing the second die; and
a through die via penetrating through the first die, passing through the through hole of the first conductive pad and the bonding dielectric layer, and landing on the second conductive pad, wherein the first and second dies are electrically connected by the through die via.
19. The semiconductor device of claim 18 , wherein the through die via is in physical, lateral, and electrical contact with the first conductive pad.
20. The semiconductor device of claim 18 , wherein a portion of the bonding dielectric layer extends into the through hole of the first conductive pad to laterally separate the through die via from the first conductive pad.