Trench-gate power MOSFET with buried field plates
A semiconductor device includes first to third electrodes, a semiconductor part, a control electrode and an insulating body. The second electrode is opposite to the first electrode. The semiconductor part is provided between the first electrode and the second electrode. The semiconductor part includes first and second trenches next to each other in a front side facing the second electrode. The second trench has a first width in a first direction directed from the first trench toward the second trench. The third electrode and the control electrode are provided inside the first trench. Another third electrode and the insulating body is provided inside the second trench. The insulating body is positioned in the second trench between said another third electrode and the second electrode. The insulating body has a second width in the first direction. The second width is equal to the first width of the second trench.
1. A semiconductor device, comprising:
a first electrode;
a second electrode opposite to the first electrode;
a semiconductor part provided between the first electrode and the second electrode, the semiconductor part including first and second trenches next to each other in a front side of the semiconductor part, the front side facing the second electrode;
a third electrode provided inside the first trench, the third electrode being electrically insulated from the semiconductor part by a first insulating film;
a control electrode provided inside the first trench with the third electrode, a distance from the control electrode to the first electrode being greater than a distance from the third electrode to the first electrode, the control electrode being electrically insulated from the semiconductor part by a second insulating film, the control electrode being electrically insulated from the third electrode by a third insulating film, the control electrode being electrically insulated from the second electrode by a fourth insulating film;
another third electrode provided inside the second trench, said another third electrode being electrically insulated from the semiconductor part by another first insulating film; and
an insulating body provided in the second trench between said another third electrode and the second electrode, no electrode being provided inside the second trench between said another third electrode and the second electrode,
the semiconductor part including a first layer of a first conductivity type, a second layer of a second conductivity type, and a third layer of the first conductivity type,
the first layer extending between the first electrode and the second electrode, the first layer including a portion positioned between the third electrode and said another third electrode,
the second layer being provided between the first layer and the second electrode and between the control electrode and the insulating body,
the third layer being provided between the second layer and the second electrode, the third layer contacting the second insulating film, the second layer and the third layer being electrically connected to the second electrode, wherein
the first insulating film, the second insulating film, the third insulating film, and the insulating body each include silicon oxide, and
the fourth insulating film includes a portion provided between the second electrode and the insulating body.
2. The device according to claim 1 , wherein
the insulating body has a first thickness in a first direction, the first direction being directed from the first electrode toward the second electrode, and
the second layer of the semiconductor part has a second thickness in the first direction, the first thickness being greater than the second thickness.
3. The device according to claim 1 , wherein
the insulating body includes a first insulating portion and a second insulating portion,
the first insulating portion is provided between the second insulating portion and the second layer of the semiconductor part,
the first insulating portion includes a same material as the first insulating film, and
the second insulating portion includes a different material from a material of the first insulating portion.
4. The device according to claim 3 , wherein
the first insulating portion has a thickness in a second direction that is substantially equal to a thickness in the second direction of the first insulating film, the second direction being directed from the first trench toward the second trench.
5. The device according to claim 3 , wherein
the insulating body further includes a third insulating portion,
the second insulating portion is provided between the second electrode and said another third electrode,
the third insulating portion is provided between the second insulating portion and said another third electrode, and
the third insulating portion includes a same material as a material of the third insulating film.
6. The device according to claim 3 , wherein
the second insulating portion includes silicon oxide to which at least one of boron or phosphorus is added.
7. The device according to claim 3 , wherein
the first insulating portion and the second insulating portion include silicon oxide, and
a density of silicon atoms in the second insulating portion is less than a density of silicon atoms in the first insulating portion.
8. The device according to claim 3 , wherein
the insulating body further includes a third insulating portion,
the third insulating portion extends between the second electrode and said another third electrode and includes a same material as a material of the third insulating film, and
the second insulating portion is provided between the first insulating portion and the third insulating portion in second direction, the second direction being directed from the first trench toward the second trench.
9. The device according to claim 8 , wherein
the first insulating portion has a thickness in the second direction, the thickness of the first insulating portion being less than a thickness in the second direction of the first insulating film.