EUV photo masks and manufacturing method thereof
A reflective mask includes a substrate, a reflective multilayer disposed on the substrate, a capping layer disposed on the reflective multilayer, and an absorber layer disposed on the capping layer. The absorber layer includes a base material made of one or more of a Cr based material, an Ir based material, a Pt based material, or Co based material, and further contains one or more additional elements selected from the group consisting of Si, B, Ge, Al, As, Sb, Te, Se and Bi.
1. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer; and
an absorber layer disposed on the capping layer, the absorber layer comprising a base material and one or more of the elements Si, B, Ge, Al, As, Se, and Bi, the one or more the elements being different from any constituent element of the base material.
2. The reflective mask of claim 1 , further comprising a pattern formed in the absorber layer.
3. The reflective mask of claim 2 , further comprising an oxide formed on a side face of the pattern.
4. The reflective mask of claim 3 , wherein the oxide includes an element of the one or more of the elements.
5. The reflective mask of claim 1 , wherein a concentration of the one or more of the elements in the absorber layer is in a range from 0.5 atomic % to 30 atomic %.
6. The reflective mask of claim 1 , wherein a first portion of the absorber layer proximal the capping layer has a higher concentration of the one or more of the elements than a second portion of the absorber layer distal the capping layer.
7. The reflective mask of claim 1 , wherein a first portion of the absorber layer proximal the capping layer has a lower concentration of the one or more of the elements than a second portion of the absorber layer distal the capping layer.
8. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an intermediate layer disposed on the capping layer, the intermediate layer comprising a material in elemental form, alloy form, or compound form;
an absorber layer disposed on the intermediate layer;
an opening formed through the absorber layer and the intermediate layer and exposing the capping layer; and
a protective layer lining a side face of the opening and covering the absorber layer and the intermediate layer within the opening, the protective layer comprising a chemical compound made from the material of the intermediate layer.
9. The reflective mask of claim 8 , wherein the chemical compound is an oxide.
10. The reflective mask of claim 8 , wherein the intermediate layer comprises the material in the alloy form.
11. The reflective mask of claim 10 , wherein the material in the alloy form includes one or more of Si, B, Ge, Al, As, Sb, Te, Se, and Bi.
12. The reflective mask of claim 8 , wherein the intermediate layer comprises the material in the compound form, and the material in the compound form includes one or more of Si, B, Ge, Al, As, Sb, Te, Se, and Bi.
13. The reflective mask of claim 8 , wherein a thickness of a first portion of the protective layer proximal the capping layer is greater than a thickness of a second portion of the protective layer distal the capping layer.
14. A reflective mask, comprising:
a substrate;
a reflective multilayer disposed on the substrate;
a capping layer disposed on the reflective multilayer;
an absorber layer disposed on the capping layer, the absorber layer comprising a base material and one or more elements, the one or more elements being different from any constituent element of the base material;
an opening formed through the absorber layer and exposing the capping layer; and
a protective layer lining a side face of the opening and covering the absorber within the opening, the protective layer comprising a chemical compound including the one or more elements from the absorber layer.
15. The reflective mask of claim 14 , wherein the base material comprises a Cr based material, an Ir based material, a Pt based material, or a Co based material.
16. The reflective mask of claim 14 , wherein the chemical compound is an oxide.
17. The reflective mask of claim 14 , wherein the absorber layer comprises a plurality of layers including the one or more elements.
18. The reflective mask of claim 17 , wherein at least one layer of the plurality of layers has a different composition than remaining layers of the plurality of layers.
19. The reflective mask of claim 17 , wherein the plurality of layers are arranged at equal intervals from a side of the absorber layer proximal the capping layer to a side of the absorber layer distal the capping layer.
20. The reflective mask of claim 14 , wherein a concentration of the one or more elements in the absorber layer is in a range from 1×10 20 atoms/cm 3 to 1×10 22 atoms/cm 3 .