IP Library › Granted Patent US 12,367,917
Granted Patent B2
US 12,367,917 · App. 18/415,278 · Granted Jul 22, 2025

Systems and methods for controlling power assertion in a memory device

Inventor: Sanjeev Kumar Jain (Ottawa, CA)
Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
G11C7/222G11C7/1039G11C7/20G11C8/08G11C8/10G11C2207/2227
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Quick Facts
Patent No.
US 12,367,917
App. No.
18/415,278
Granted
Jul 22, 2025
Kind
B2
Abstract

Systems and methods are provided for controlling a sleep operation for a memory array. A memory system may include a memory array with a memory cell and a word line driver, the memory array receiving a word line clock signal that enables and disables memory read and write operations of the memory cell. The memory array may further including a switching circuit coupled between the word line driver and a power source, the switching circuit being controlled by a local word line sleep signal to turn power to the word line driver on and off. A latch circuit may generate the local word line sleep signal in response to a delayed clock signal and one or more power management control signals. The word line clock signal and the delayed clock signal may both being generated as a function of a memory clock signal. The latch circuit may synchronize the local word line sleep signal with the delayed clock signal such that the local word line sleep signal is prevented from turning off power to the word line driver until memory read and write operations of the memory cell are disabled by the word line clock signal.

Claims (30)

1. A system comprising:

a circuit configured to generate a first word line sleep signal in response to a delayed clock signal such that the first word line sleep signal is prevented from turning off power to a word line driver until a memory read or write operation of a memory cell is disabled.

2. The system of claim 1 , further comprising:

a memory array including the word line driver and the memory cell and configured to receive a word line clock signal that enables or disables the memory read or write operation; and

a clock generator configured to generate a local clock signal as a function of a memory clock signal, wherein the word line clock signal and the delayed clock signal are generated as a function of the local clock signal.

3. The system of claim 2 , further comprising a decoder configured to generate the word line clock signal in response to the local clock signal and pre-decoded address lines.

4. The system of claim 2 , further comprising a delay circuit configured to delay the local clock signal to generate the delayed clock signal and including an even number of buffers, the number of buffers being selected to synchronize the delayed clock signal and the word line clock signal.

5. The system of claim 2 , further comprising a delay tracking element configured to delay the local clock signal to generate the delayed clock signal and to synchronize the delayed clock signal and the word line clock signal.

6. The system of claim 5 , wherein the delay tracking element comprises a length of conductive trace material.

7. The system of claim 1 , further comprising a second circuit configured to generate a second word line sleep signal in response to one or more control signals, wherein the circuit is configured to generate the first word line sleep signal in response further to the second word line sleep signal.

8. A method comprising:

generating a first word line sleep signal in response to a delayed clock signal such that the first word line sleep signal is prevented from turning off power to a word line driver until a memory read or write operation is disabled.

9. The method of claim 8 , further comprising:

generating a word line clock signal and the delayed clock signal as a function of a memory clock signal;

receiving the word line clock signal at a memory array, wherein the word line clock signal enables or disables the memory read or write operation; and

generating a local clock signal as a function of the memory clock signal, wherein the word line clock signal and the delayed clock signal are generated as a function of the local clock signal.

10. The method of claim 9 , further comprising generating, at a decoder, the word line clock signal as a function of the local clock signal and pre-decoded address lines.

11. The method of claim 9 , further comprising delaying the local clock signal to generate the delayed clock signal synchronous with the word line clock signal.

12. The method of claim 8 , further comprising generating a second word line sleep signal in response to one or more control signals, wherein the first word line sleep signal is generated in response further to the second word line sleep signal.

13. A system comprising:

a circuit configured to generate a first word line sleep signal in response to one or more control signals such that the first word line sleep signal is prevented from turning off power to a word line driver until a memory read or write operation of a memory cell is disabled.

14. The system of claim 13 , further comprising:

a memory array including the word line driver and the memory cell and configured to receive a word line clock signal that enables or disables the memory read or write operation; and

a clock generator configured to generate a local clock signal as a function of a memory clock signal, wherein the word line clock signal is generated as a function of the local clock signal.

15. The system of claim 14 , wherein the circuit is configured to generate the first word line sleep signal in response further to a delayed clock signal, the system further comprising one or more second circuits configured to synchronize the one or more control signals with the local clock signal.

16. The system of claim 14 , further comprising a decoder configured to generate the word line clock signal in response to the local clock signal and pre-decoded address lines.

17. The system of claim 14 , further comprising a delay circuit configured to delay the local clock signal to generate a delayed clock signal and including an even number of buffers, the number of buffers being selected to synchronize the delayed clock signal and the word line clock signal.

18. The system of claim 14 , further comprising a delay tracking element configured to delay the local clock signal to generate a delayed clock signal and to synchronize the delayed clock signal and the word line clock signal.

19. The system of claim 18 , wherein the delay tracking element comprises a length of conductive trace material.

20. The system of claim 13 , further comprising a second circuit configured to generate a second word line sleep signal in response to the one or more control signals, wherein the circuit is configured to generate the first word line sleep signal in response further to the second word line sleep signal.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 18, 2024
From: JAIN, SANJEEV KUMAR
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 066159/0609 →
Continuity (4)
Continuation 17848581 · Jun 24, 2022
Continuation 17179682 · Feb 19, 2021
Provisional Application 63070864 · Aug 27, 2020
Related Publication 20240153545A1 · May 9, 2024
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