Photoelectric conversion device and photodetection system
The photoelectric conversion device includes a semiconductor layer provided with an avalanche photodiode, and an interconnection structure layer provided on a side of a first surface of the semiconductor layer. The interconnection structure layer includes an interconnection structure made of a metal material and overlapping with the avalanche multiplication region of the avalanche photodiode in a plan view. The interconnection structure includes a first interconnection, a second interconnection disposed farther from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection. An opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view. The second interconnection is disposed so as to overlap an entire of the opening in the plan view. The contact electrode is arranged around the opening in the plan view.
1. A photoelectric conversion device comprising:
a semiconductor layer provided with an avalanche photodiode; and
an interconnection structure layer provided on a side of a first surface of the semiconductor layer,
wherein the interconnection structure layer includes an interconnection structure made of a metal material and overlapping with an avalanche multiplication region of the avalanche photodiode in a plan view,
wherein the interconnection structure includes a first interconnection, a second interconnection disposed farther away from the first surface than the first interconnection, and a contact electrode electrically connecting the first interconnection and the second interconnection,
wherein an opening is provided in the first interconnection in a portion overlapping with the avalanche multiplication region in the plan view,
wherein the second interconnection is disposed so as to overlap with an entire of the opening in the plan view,
wherein the contact electrode is disposed around the opening in the plan view,
wherein the contact electrode includes, in a cross-sectional view, a first contact portion and a second contact portion disposed around the opening, and each of the first contact portion and the second contact portion is connected to the second interconnection, and
wherein the contact electrode has a tapered shape in which a width on a side of the first interconnection is narrower than a width on a side of the second interconnection.
2. The photoelectric conversion device according to claim 1 ,
wherein the interconnection structure layer further includes a first insulating film disposed between the first interconnection and the second interconnection, and a second insulating film disposed between the first insulating film and the semiconductor layer, and
wherein a refractive index of the first insulating film is higher than a refractive index of the second insulating film.
3. The photoelectric conversion device according to claim 1 , wherein the avalanche multiplication region is arranged inside an outer periphery of the first interconnection in the plan view.
4. The photoelectric conversion device according to claim 1 , wherein the interconnection structure is electrically connected to the avalanche photodiode.
5. The photoelectric conversion device according to claim 1 , wherein at least one of the first interconnection, the second interconnection, and the contact electrode is made of the metal material including copper.
6. The photoelectric conversion device according to claim 1 , wherein the interconnection structure layer includes an antireflection layer disposed on the first surface of the semiconductor layer.
7. The photoelectric conversion device according to claim 1 , wherein a plurality of openings is provided in the first interconnection.
8. The photoelectric conversion device according to claim 7 , wherein the second interconnection is disposed so as to overlap with the plurality of openings.
9. The photoelectric conversion device according to claim 7 , wherein a plurality of second interconnections corresponding to the plurality of openings is provided.
10. The photoelectric conversion device according to claim 1 , wherein a plurality of contact electrodes is arranged to surround the opening.
11. The photoelectric conversion device according to claim 10 ,
wherein the opening has a polygonal shape in the plan view, and
wherein at least one contact electrode is arranged corresponding to each side of the polygon shape.
12. The photoelectric conversion device according to claim 1 , wherein the contact electrode has a frame-like structure surrounding the opening.
13. The photoelectric conversion device according to claim 1 ,
wherein the semiconductor layer includes a plurality of avalanche photodiodes and an isolation portion that isolates the plurality of avalanche photodiodes from each other, and
wherein the isolation portion includes a reflecting member that reflects light.
14. The photoelectric conversion device according to claim 1 further comprising an optical structure layer provided on a side of a second surface of the semiconductor layer that is opposite to the first surface of the semiconductor layer.
15. The photoelectric conversion device according to claim 1 comprising a plurality of pixels each including a photoelectric conversion unit including the avalanche photodiode and outputting a signal corresponding to incident of photons, a processing circuit that processes the signal output from the photoelectric conversion unit, and a pixel output circuit that controls an output of the signal processed by the processing circuit.
16. The photoelectric conversion device according to claim 15 comprising a first substrate provided with at least the avalanche photodiode of the photoelectric conversion unit and a second substrate provided with the processing circuit and the pixel output circuit and stacked on the first substrate.
17. The photoelectric conversion device according to claim 1 , wherein the interconnection structure overlaps with an entire of the avalanche multiplication region of the avalanche photodiode in the plan view.
18. A photodetection system comprising:
the photoelectric conversion device according to claim 1 ; and
a signal processing device that processes a signal output from the photoelectric conversion device.
19. The photodetection system according to claim 18 , wherein the signal processing device generates a distance image representing distance information to an object based on the signal.
20. A movable object comprising:
the photoelectric conversion device according to claim 1 ;
a distance information acquisition unit that acquires distance information to an object from a parallax image based on a signal output from the photoelectric conversion device; and
a control unit that controls the movable object based on the distance information.