IP Library Granted Patent US 12,371,385
Granted Patent B2
US 12,371,385 · App. 17/236,580 · Granted Jul 29, 2025

Sliding member, and bearing, motor, and drive device using the same

Inventors: Kai Funaki (Yokohama Kanagawa, JP); Katsuyuki Aoki (Yokohama Kanagawa, JP); Haruhiko Yamaguti (Yokohama Kanagawa, JP); Minoru Takao (Yokohama Kanagawa, JP); Yutaka Abe (Zushi Kanagawa, JP)
Assignees: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
C04B35/587C04B35/593C04B35/6261C04B35/63C04B35/6455F16C19/02F16C33/32H02K5/1732H02K7/083H02K11/33C04B2235/3217C04B2235/3222C04B2235/3225C04B2235/3232C04B2235/3244C04B2235/3826C04B2235/3839C04B2235/3865C04B2235/3873C04B2235/5436C04B2235/661C04B2235/782C04B2235/786C04B2235/85F16C2206/60
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 12,371,385
App. No.
17/236,580
Granted
Jul 29, 2025
Kind
B2
Abstract

The sliding member according to the embodiment includes a silicon nitride sintered body that includes silicon nitride crystal grains and a grain boundary phase, in which a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body is not less than 0% and not more than 10%. The percentage is more preferably not less than 0% and not more than 3%.

Claims (38)

1. A sliding member, comprising:

a silicon nitride sintered body including silicon nitride crystal grains and a grain boundary phase among the silicon nitride crystal grains,

a percentage of a number of the silicon nitride crystal grains including dislocation defect portions inside the silicon nitride crystal grains among any 50 of the silicon nitride crystal grains having completely visible contours in a 50 μm×50 μm observation region of any cross section or surface of the silicon nitride sintered body being not less than 0% and not more than 10%,

wherein a percentage of a number of the silicon nitride crystal grains having an occupied area ratio of the dislocation defect portion that is not more than 5% among the number of the silicon nitride crystal grains including dislocation defect portions is not less than 70%.

2. The sliding member according to claim 1 , wherein

the percentage is not less than 0% and not more than 3%.

3. The sliding member according to claim 1 , wherein

no aggregate of a component other than silicon, oxygen, and nitrogen is 1 μm2 or more in the dislocation defect portion.

4. The sliding member according to claim 1 , wherein

no component other than silicon, oxygen, and nitrogen is detected to be 10 mol % or more in the dislocation defect portion.

5. The sliding member according to claim 1 , wherein

a maximum value of major diameters of the silicon nitride crystal grains in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is not more than 25 μm.

6. The sliding member according to claim 1 , wherein

an average of major diameters of the silicon nitride crystal grains in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is within a range not less than 1 μm and not more than 10 μm.

7. The sliding member according to claim 1 , wherein

a surface area of each of the grain boundary phases in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is not more than 9 μm 2 .

8. The sliding member according to claim 1 , wherein

the sliding member is a bearing ball.

9. The sliding member according to claim 1 , wherein

the percentage is not less than 0% and not more than 3%, and

no aggregate of a component other than silicon, oxygen, and nitrogen is 1 μm 2 or more in the dislocation defect portion.

10. The sliding member according to claim 9 , wherein

an average of major diameters of the silicon nitride crystal grains in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is within a range not less than 1 μm and not more than 10 μm, and

a surface area of each of the grain boundary phases in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is not more than 9 μm 2 .

11. The sliding member according to claim 1 , wherein

an average of major diameters of the silicon nitride crystal grains in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is within a range not less than 1 μm and not more than 10 μm, and

a surface area of each of the grain boundary phases in a 300 μm×300 μm observation region of any cross section of the silicon nitride sintered body is not more than 9 μm 2 .

12. A bearing, comprising:

the sliding member according to claim 1 .

13. A motor, comprising:

the bearing according to claim 12 .

14. The motor according to claim 13 , wherein

the motor is configured to cause a rotational speed of the bearing to be not less than 50 rpm.

15. The motor according to claim 13 , wherein

the motor is configured to cause a rotational speed of the bearing to change not less than 1000 rpm.

16. A drive device, comprising:

the motor according to claim 13 ; and

a controller performing at least inverter driving of the motor.

Assignments (3)
CHANGE OF NAME Recorded Jan 21, 2026
From: TOSHIBA MATERIALS CO., LTD.
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 073531/0601 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 21, 2026
From: KABUSHIKI KAISHA TOSHIBA
To: NITERRA MATERIALS CO., LTD.
Reel/Frame 073532/0082 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 21, 2021
From: FUNAKI, KAI; AOKI, KATSUYUKI; YAMAGUTI, HARUHIKO; TAKAO, MINORU; ABE, YUTAKA
To: KABUSHIKI KAISHA TOSHIBA; TOSHIBA MATERIALS CO., LTD.
Reel/Frame 055992/0716 →
Priority Claims (1)
JP 2018-231856 · Dec 11, 2018 · national
Continuity (2)
Continuation PCTJP2019045268 · Nov 19, 2019
Related Publication 20210261467A1 · Aug 26, 2021
References Cited (22)
US 11512023B2 · Aoki · 2022 [cited by examiner]
US 20020010068A1 · Komatsu · 2002 [cited by applicant]
US 20040191535A1 · Komatsu · 2004 [cited by applicant]
US 20100054652A1 · Takao et al. · 2010 [cited by applicant]
US 20110039068A1 · Takao · 2011 [cited by applicant]
US 20180002237A1 · Aoki · 2018 [cited by examiner]
US 20180134626A1 · Ikeda et al. · 2018 [cited by applicant]
CN 1537086A · 2004 [cited by applicant]
CN 107531579A · 2018 [cited by applicant]
DE 10136499A1 · 2003 [cited by applicant]
EP 3846596A1 · 2021 [cited by applicant]
JP 2000169239A · 2000 [cited by applicant]
JP 2003063872A · 2003 [cited by applicant]
JP 201172113A · 2011 [cited by applicant]
JP 2011132126A · 2011 [cited by applicant]
JP 5380277B2 · 2014 [cited by applicant]
JP 2016064971A · 2016 [cited by applicant]
WO WO2009128386A1 · 2009 [cited by applicant]
WO WO2016117553A1 · 2016 [cited by examiner]
WO-2016117553-A1 machine translation (Year: 2016). [cited by examiner]
S. Murata, Handbook of Applied Physics, Maruzen Co., Ltd., published Apr. 25, 2002 right col. of p. 219 (with English machine translation). [cited by applicant]
Chinese Decision to Grant Patent—issued May 8, 2024 in counterpart Chinese Application No. 202310221657.X (English translation attached). [cited by applicant]