Compositions and methods thereof
Aspects of the present disclosure include compositions and methods of making and use thereof. In at least one aspect, a composition, includes a polyaniline and a polysiloxane having a density of about 1.05 g/cm 3 or greater. The composition optionally includes a solvent. In at least one aspect, a method includes introducing a polyaniline with a polysiloxane having a density of about 1.05 g/cm 3 or greater to form a composition. In at least one aspect, a method includes disposing a composition onto a substrate. The composition includes a polyaniline and a polysiloxane having a density of about 1.05 g/cm 3 or greater.
1. A circuit board comprising a composition layer disposed thereon, the composition layer comprising a cured product prepared from a composition comprising:
about 5 wt % to about 30 wt % of a polyaniline comprising a weight average molecular weight (Mw) of about 100,000 g/mol to about 130,000 g/mol; and
a polysiloxane having a density of about 1.05 g/cm 3 or greater as measured by ASTM D792;
wherein the composition layer has a thickness of about 1 μm to about 20 mm and a resistivity of about 4 E+5Ω/□ to about 2.5 E+11Ω/□.
2. The circuit board of claim 1 , wherein the composition comprises about 70 wt % to about 95 wt % polysiloxane, wherein an amount of polyaniline+polysiloxane does not exceed 100 wt %.
3. The circuit board of claim 1 , wherein the composition layer has a resistivity of about 4 E+5Ω/□ to about 3 E+8Ω/□.
4. The circuit board of claim 1 , wherein the polysiloxane has a thermal stability of about 150° C. to about 160° C. for at least 24 hours.
5. The circuit board of claim 1 , wherein the polysiloxane has a density of about 1.1 g/cm 3 to about 1.5 g/cm 3 as measured by ASTM D792.
6. The circuit board of claim 1 , wherein the polyaniline has a thermal stability of about 150° C. to about 160° C. for at least 24 hours.
7. The circuit board of claim 1 , wherein the polyaniline has a molecular weight distribution (MWD) of about 1 to about 5.
8. The circuit board of claim 1 , wherein the polyaniline has an outgassing % of about 0.1% or less, according to ASTM E595-93.
9. The circuit board of claim 1 , wherein the composition layer has a resistivity of about 4 E+5Ω/□ to about 3 E+6Ω/□.
10. The circuit board of claim 9 , wherein the composition layer is cured at curing temperatures of about 130° C. to about 155° C.
11. The circuit board of claim 1 , wherein the polysiloxane has an elongation of about 100% to about 700%.
12. The circuit board of claim 1 , wherein the polysiloxane has a tensile modulus of about 70 psi to about 420 psi.
13. The circuit board of claim 1 , wherein the composition layer has a thickness of about 1 μm to about 10 μm.
14. The circuit board of claim 13 , wherein the polyaniline has a molecular weight distribution (MWD) of about 1.3 to about 1.7.
15. A method, comprising:
introducing a first mixture comprising about 5 wt % to about 30 wt % of a polyaniline comprising a weight average molecular weight (Mw) of about 100,000 g/mol to about 130,000 g/mol in a first aromatic hydrocarbon solvent with a second mixture comprising a polysiloxane and a second aromatic hydrocarbon solvent, wherein the second mixture comprises a density of about 1.05 g/cm 3 or greater as measured by ASTM D792 to form a composition,
disposing the composition onto a substrate to form a composition layer, and
curing the composition layer at a temperature of about 100° C. to about 175° C. to produce a cured composition layer having a thickness of about 1 μm to about 20 mm and a resistivity of about 4 E+5Ω/□ to about 2.5 E+11Ω/□.
16. The method of claim 15 , wherein the second aromatic hydrocarbon solvent is the same or different than the first aromatic hydrocarbon solvent.
17. A method, comprising:
disposing a composition onto a substrate to form a composition layer, the composition layer comprising a polyaniline comprising a weight average molecular weight (Mw) of about 100,000 g/mol to about 130,000 g/mol and a polysiloxane having a density of about 1.05 g/cm 3 or greater, and
curing the composition layer to form a cured composition layer at a curing temperatures between about 20° C. to about 200° C.,
wherein the cured composition layer has a thickness of about 1 μm to about 20 mm and a resistivity of about 4 E+5Ω/□ to about 2.5 E+11Ω/□.
18. The method of claim 17 , wherein curing the composition further comprises:
curing the composition layer at a first temperature of about 20° C. to about 50° C. for about 1 hour to about 48 hours; and
curing the composition layer at a second temperature of about 50° C. to about 200° C. for about 1 hour to about 48 hours, wherein the first temperature is different than the second temperature.
19. The method of claim 18 , wherein the second temperature is about 100° C. to about 175° C.
20. The method of claim 17 , further comprising rinsing the cured composition layer with a rinsing agent.