Multi color stack for self aligned dual pattern formation for multi purpose device structures
A substrate processing method includes creating a mask on a top surface of a workpiece. A first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask. The method further includes exposing the workpiece to a plasma. The method further includes performing a first etching of the first portion of the gap fill material to create a first cavity while the second portion of the gap fill material remains in place, depositing a first metal-containing substance in the first cavity, performing a second etching of the second portion of the gap fill material to create a second cavity while the first metal-containing substance remains in place, and depositing a second metal-containing substance in the second cavity.
1. A substrate processing method, comprising:
creating a mask on a top surface of a workpiece, wherein a first portion of a gap fill material is overlaid by the mask and a second portion of the gap fill material is exposed through an opening in the mask;
exposing the workpiece to a plasma, wherein the first portion of the gap fill material is shielded from the plasma by the mask, and the second portion of the gap fill material is modified by exposure to the plasma;
exposing the first portion of the gap fill material and the second portion of the gap fill material to an etching process, wherein the etching process:
selectively removes the first portion of the gap fill material versus the second portion of the gap fill material; and
etches the first portion of the gap fill material to form a first cavity;
depositing a temporary fill material in the first cavity;
etching the second portion of the gap fill material to create a second cavity while the temporary fill material remains in place;
removing the temporary fill material from the first cavity; and
depositing a metal-containing substance in the first and second cavities to create a metal-containing feature.
2. The method of claim 1 , wherein the second portion of the gap fill material develops a resilient layer as a result of being modified by the exposure to the plasma.
3. The method of claim 2 , wherein the resilient layer has a thickness less than a thickness of the second portion of the gap fill material.
4. The method of claim 1 , wherein the first cavity extends to a first depth into an underlying substrate, thereby exposing a first element within the underlying substrate.
5. The method of claim 4 , wherein the second cavity extends to a second depth into the underlying substrate, thereby exposing a second element within the underlying substrate.
6. The method of claim 5 , wherein the second depth is different from the first depth.
7. The method of claim 5 , wherein depositing the metal-containing substance in the first and second cavities further comprises contacting the first and second elements with the metal-containing substance, and substantially filling the first and second cavities with the metal-containing substance.
8. The method of claim 7 , wherein the metal-containing substance includes a metal selected from a list consisting of aluminum, cobalt, copper, iridium, molybdenum, nickel, platinum, rhodium, ruthenium, tantalum, titanium, tungsten, and combination(s) thereof.
9. A substrate processing method, comprising:
creating a patterned hardmask containing first openings on a substrate;
depositing a gap fill material on the substrate in the first openings;
planarizing the gap fill material to create a planarized surface;
creating a mask on the planarized surface, the mask containing second openings;
exposing the mask to a plasma such that a first portion of the gap fill material is shielded from the plasma by the mask, a second portion of the gap fill material is modified by exposure to the plasma through the second openings, and a third portion of the gap fill material below the second portion remains unmodified;
removing the mask;
exposing the first portion of the gap fill material and the second portion of the gap fill material to an etching process, wherein the etching process:
selectively removes the first portion of the gap fill material versus the second portion of the gap fill material; and
etches the first portion of the gap fill material to form a first cavity;
depositing a first metal-containing substance in the first cavity to create a first metal-containing feature;
performing a second etching of the gap fill material to remove the second and third portions of the gap fill material to create a second cavity; and
depositing a second metal-containing substance in the second cavity to create a second metal-containing feature.
10. The method of claim 9 , wherein the first metal-containing substance remains in place in the first cavity while performing the second etching of the gap fill material.
11. The method of claim 9 , wherein the second portion of the gap fill material is modified by the exposure to the plasma into a resilient layer.
12. The method of claim 9 , wherein the first cavity extends to a first depth into an underlying substrate, thereby exposing a first element within the underlying substrate.
13. The method of claim 12 , wherein depositing the first metal-containing substance in the first cavity further comprises contacting the first element with the first metal-containing substance, and substantially filling the first cavity with the first metal-containing substance.
14. The method of claim 13 , wherein the first metal-containing substance includes a metal selected from a list consisting of aluminum, cobalt, copper, iridium, molybdenum, nickel, platinum, rhodium, ruthenium, tantalum, titanium, tungsten, and combination(s) thereof.
15. The method of claim 12 , wherein the second cavity extends to a second depth in the underlying substrate, thereby exposing a second element within the underlying substrate.
16. The method of claim 15 , wherein the second depth is different from the first depth.
17. The method of claim 15 , wherein depositing the second metal-containing substance in the second cavity further comprises contacting the second element with the second metal-containing substance, and substantially filling the second cavity with the second metal-containing substance.
18. The method of claim 17 , wherein the second metal-containing substance includes a metal selected from a list consisting of aluminum, cobalt, copper, iridium, molybdenum, nickel, platinum, rhodium, ruthenium, tantalum, titanium, tungsten, and combination(s) thereof.
19. The method of claim 9 , wherein the second metal-containing substance is a same substance as the first metal-containing substance.