Acoustic wave filter with buried connection layer under resonator
A packaged acoustic wave component has a device substrate and a metal layer disposed over the device substrate. An acoustic wave device is disposed over at least a portion of the metal layer so that the metal layer is interposed between the device substrate and at least a portion of the acoustic wave device. A cap substrate is spaced above the device substrate, and peripheral wall that is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the acoustic wave device. One or more vias extend through the device substrate and are disposed under the metal layer.
1. A packaged acoustic wave component comprising:
a device substrate;
a metal layer disposed over the device substrate;
a bulk acoustic wave device separate from the metal layer and disposed over at least a portion of the metal layer so that at least a portion of the metal layer is interposed between the device substrate and the bulk acoustic wave device; and
one or more vias extending through the device substrate and disposed directly under the metal layer,
wherein at least a portion of the metal layer is an inductor.
2. The packaged acoustic wave component of claim 1 wherein a cap substrate is spaced above the device substrate and a peripheral wall is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the bulk acoustic wave device.
3. The packaged acoustic wave component of claim 1 wherein the metal layer is planar.
4. The packaged acoustic wave component of claim 1 wherein the metal layer includes spaced apart metal layer portions.
5. The packaged acoustic wave component of claim 4 wherein a filled sacrificial layer is interposed between the metal layer portions.
6. The packaged acoustic wave component of claim 4 wherein a filled piezoelectric layer is interposed between the metal layer portions.
7. The packaged acoustic wave component of claim 1 wherein the metal layer includes an offset portion that defines a recessed cavity.
8. The packaged acoustic wave component of claim 7 , wherein the device substrate includes a recessed portion that receives the offset portion of the metal layer.
9. A radio frequency module comprising:
a package substrate;
a packaged acoustic wave component including a device substrate, a metal layer disposed over the device substrate, a bulk acoustic wave device separate from the metal layer and disposed over at least a portion of the metal layer so that at least a portion of the metal layer is interposed between the device substrate and the bulk acoustic wave device, and one or more vias extending through the device substrate and disposed directly under the metal layer; and
additional circuitry chosen from the group consisting of one or more power amplifiers, one or more radio frequency switches, one or more filters and one or more antennas, the packaged acoustic wave component and additional circuitry disposed on the package substrate.
10. The radio frequency module of claim 9 wherein a cap substrate is spaced above the device substrate and a peripheral wall is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the bulk acoustic wave device.
11. The radio frequency module of claim 9 wherein the metal layer is planar.
12. The radio frequency module of claim 9 wherein the metal layer includes spaced apart metal layer portions.
13. The radio frequency module of claim 9 wherein the metal layer includes an offset portion that defines a recessed cavity.
14. A wireless communication device comprising:
an antenna; and
a front end module including one or more packaged acoustic wave components configured to filter a radio frequency signal associated with the antenna, each packaged acoustic wave component including a device substrate, a metal layer disposed over the device substrate, a bulk acoustic wave device separate from the metal layer and disposed over at least a portion of the metal layer so that at least a portion of the metal layer is interposed between the device substrate and the bulk acoustic wave device, and one or more vias extending through the device substrate and disposed directly under the metal layer.
15. The wireless communication device of claim 14 wherein a cap substrate is spaced above the device substrate and a peripheral wall is attached to and extends between the device substrate and the cap substrate, the peripheral wall surrounding the bulk acoustic wave device.