IP Library › Granted Patent US 12,378,109
Granted Patent B2
US 12,378,109 · App. 17/896,978 · Granted Aug 5, 2025

Charge transfer circuitry for MEMS devices

Inventors: John Hong (San Diego, CA); Tallis Chang (San Diego, CA); Bing Wen (San Diego, CA); Edward Chan (San Diego, CA); Sean Andrews (San Diego, CA); Heesun Shin (San Diego, CA)
Assignee: Obsidian Sensors, Inc.
B81B7/02B81C1/00015B81B2201/042B81B2203/0127B81B2203/0163B81B2203/0353B81B2203/04B81B2207/01B81B2207/03B81C2201/0135B81C2201/0156
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Quick Facts
Patent No.
US 12,378,109
App. No.
17/896,978
Granted
Aug 5, 2025
Kind
B2
Abstract

Microelectromechanical system (MEMS) devices, methods of operating the MEMS device, and methods of manufacturing the MEMS device are disclosed. In some embodiments, the MEMS device includes a glass substrate; an electrode on the glass substrate; a hinge mechanically coupled to the electrode; a membrane mirror mechanically coupled to the hinge; a TFT on the glass substrate and electrically coupled to the electrode; and a control circuit comprising: a multiplexer configured to turn on or turn off the TFT; and a drive source configured to provide a drive signal for charging the electrode through the TFT. An amplitude of the drive signal corresponds to an amount of charge, and the amount of charge generates an electrostatic force for actuating the hinge and a portion of the membrane mirror mechanically coupled to the hinge. In some embodiments, the MEMS devices comprise a charge transfer circuit for providing the amount of charge.

Claims (54)

1. A microelectromechanical system (MEMS) device, comprising:

a pixel comprising a gap and configured to store an amount of charge, wherein the amount of charge generates an electrostatic force corresponding to a distance of the gap;

a pixel switch electrically coupled to the pixel;

an intermediate capacitor electrically coupled to the pixel switch;

a data line;

a second capacitor;

a second switch configured to electrically couple the data line and the second capacitor; and

a third switch configured to electrically couple the second capacitor and the intermediate capacitor.

2. The MEMS device of claim 1 , further comprising:

a sensing transistor electrically coupled to the intermediate capacitor; and

a fourth switch configured to electrically couple the sensing transistor to a measurement line.

3. The MEMS device of claim 1 , wherein the pixel is disposed on a glass substrate.

4. The MEMS device of claim 3 , wherein the glass substrate comprises an opening.

5. The MEMS device of claim 1 , further comprising:

a hinge mechanically coupled to the pixel, and

a membrane mirror mechanically coupled to the hinge.

6. The MEMS device of claim 5 , wherein the membrane mirror comprises an opening.

7. The MEMS device of claim 1 , wherein the pixel switch comprises a TFT on a glass substrate.

8. A method of operating a MEMS device, comprising:

setting a voltage of an intermediate capacitor;

electrically coupling the intermediate capacitor to a pixel at a first gap, wherein:

the voltage and electrical coupling cause a charge transfer between the intermediate capacitor and the pixel, and

the charge transfer causes a change in an electrostatic force of the pixel and the pixel to change from the first gap to a second gap;

setting a second voltage of a second capacitor;

electrically coupling the second capacitor to the intermediate capacitor to set the first voltage of the intermediate capacitor;

prior to electrically coupling the second capacitor to the intermediate capacitor to set the first voltage of the intermediate capacitor, the intermediate capacitor is at a third voltage, and

the first voltage of the intermediate capacitor is an equilibrium voltage between the electrically coupled second capacitor and the intermediate capacitor.

9. The method of claim 8 , further comprising measuring the voltage of the intermediate capacitor.

10. A method of operating a MEMS device, comprising:

setting a voltage of an intermediate capacitor;

electrically coupling the intermediate capacitor to a pixel at a first gap, wherein:

the voltage and electrical coupling cause a charge transfer between the intermediate capacitor and the pixel, and

the charge transfer causes a change in an electrostatic force of the pixel and the pixel to change from the first gap to a second gap;

setting a second voltage of a second capacitor;

electrically coupling the second capacitor to the intermediate capacitor to set the first voltage of the intermediate capacitor; and

prior to setting the second voltage of the second capacitor, setting the second capacitor and the intermediate capacitor to a fourth voltage.

11. A method of manufacturing a MEMS device, comprising:

providing a pixel comprising a gap and configured to store an amount of charge, wherein the amount of charge generates an electrostatic force corresponding to a distance of the gap;

providing a pixel switch;

electrically coupling the pixel switch to the pixel;

providing an intermediate capacitor;

electrically coupling the intermediate capacitor to the pixel switch;

providing a glass substrate;

depositing the electrode on the glass substrate; and

creating openings in the glass substrate, wherein the openings are configured for release of a sacrificial layer.

12. The method of claim 11 , further comprising:

forming a hinge; and

mechanically coupling the hinge to the pixel.

13. The method of claim 12 , further comprising mechanically coupling a membrane mirror to the hinge.

14. The method of claim 11 , further comprising:

depositing a sacrificial layer; and

depositing a membrane mirror above the sacrificial layer.

15. The method of claim 14 , further comprising:

creating openings in the membrane mirror, wherein the openings are configured for release of a sacrificial layer.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 14, 2022
From: HONG, JOHN; CHANG, TALLIS; WEN, BING; CHAN, EDWARD; ANDREWS, SEAN; SHIN, HEESUN
To: OBSIDIAN SENSORS, INC.
Reel/Frame 062085/0401 →
Continuity (2)
Provisional Application 63237496 · Aug 26, 2021
Related Publication 20230061174A1 · Mar 2, 2023
References Cited (3)
US 20090289606A1 · Lauxtermann · 2009 [cited by examiner]
US 20150277099A1 · Hong · 2015 [cited by examiner]
US 20160103515A1 · Seo · 2016 [cited by examiner]