Polishing solution, dispersion, polishing solution production method, and polishing method
A polishing liquid for CMP, containing: abrasive grains containing silica; and a liquid medium, in which a content of the abrasive grains is 1.0% by mass or more based on the total amount of the polishing liquid, and in a particle size distribution on mass basis obtained by a centrifugation method, D50 of the abrasive grains is 150 nm or less, D90 of the abrasive grains is 100 nm or more, and a difference between the D90 and the D50 is 21 nm or more.
1. A polishing liquid for CMP, comprising: abrasive grains containing silica; an anticorrosive agent containing 6-aminohexanoic acid; and a liquid medium, wherein
in a particle size distribution on mass basis obtained by a centrifugation method, D50 of the abrasive grains is 150 nm or less, D90 of the abrasive grains is 100 nm or more, and a difference between the D90 and the D50 is 21 nm or more, and
a content of the abrasive grains is 1.0% by mass or more based on the total amount of the polishing liquid.
2. The polishing liquid for CMP according to claim 1 , wherein a content of the abrasive grains is 5.0% by mass or less based on the total amount of the polishing liquid.
3. The polishing liquid for CMP according to claim 1 , wherein the D50 is 50 nm or more.
4. The polishing liquid for CMP according to claim 1 , wherein the D90 is 200 nm or less.
5. The polishing liquid for CMP according to claim 1 , further comprising an oxidizing agent.
6. The polishing liquid for CMP according to claim 5 , wherein the oxidizing agent contains hydrogen peroxide.
7. The polishing liquid for CMP according to claim 1 , further comprising an iron ion supplying agent.
8. The polishing liquid for CMP according to claim 7 , wherein the iron ion supplying agent contains at least one selected from the group consisting of iron nitrate and iron nitrate hydrate.
9. The polishing liquid for CMP according to claim 7 , further comprising an organic acid, wherein
a ratio of a molecular number of the dissociated organic acid with respect to one iron ion atom is 2.0 or more.
10. The polishing liquid for CMP according to claim 9 , wherein the organic acid is a divalent or trivalent organic acid having no carbon-carbon unsaturated bond.
11. The polishing liquid for CMP according to claim 9 , wherein the organic acid contains at least one selected from the group consisting of malonic acid, succinic acid, adipic acid, glutaric acid, malic acid, and citric acid.
12. The polishing liquid for CMP according to claim 1 , wherein a pH is 4.0 or less.
13. The polishing liquid for CMP according to claim 1 , wherein a pH is 2.0 or more.
14. A method for polishing a base substrate, the method comprising:
a step of preparing a base substrate including a first portion composed of an insulating material and a second portion provided on the first portion and composed of a tungsten material;
a step of disposing the base substrate on a polishing pad so that a surface of the second portion on a side opposite to the first portion faces the polishing pad; and
a step of polishing at least the second portion by supplying the polishing liquid according to claim 1 between the polishing pad and the base substrate and relatively moving the polishing pad and the base substrate.