Semiconductor device and method of manufacturing the same
A semiconductor device includes first conductive layers, a width in a first direction thereof being a first width, a second conductive layer arranged with first conductive layers, a smaller one of a width in the first direction thereof and a width in a second direction thereof being a second width that is larger than the first width, a third conductive layer in contact with one end portion of at least one of first conductive layers, and a fourth conductive layer in contact with one end portion of the second conductive layer. The at least one of first conductive layers and the second conductive layer contain a first metal, a second metal, and oxygen (O). A concentration of the first metal of the at least one of first conductive layers is higher than a concentration of the first metal of the second conductive layer.
1. A semiconductor device comprising:
a plurality of first conductive layers arranged in a first direction and a second direction intersecting with the first direction or arranged in the first direction and extending in the second direction, a width in the first direction thereof being a first width;
a second conductive layer arranged with the plurality of first conductive layers in the first direction or the second direction, a smaller one of a width in the first direction thereof and a width in the second direction thereof being a second width that is larger than the first width;
a third conductive layer in contact with one end portion of at least one of the plurality of first conductive layers in a third direction intersecting with the first direction and the second direction; and
a fourth conductive layer in contact with one end portion of the second conductive layer in the third direction, wherein
the at least one of the plurality of first conductive layers and the second conductive layer contain a first metal, a second metal different from the first metal, and oxygen (O), and
a concentration of the first metal of the at least one of the plurality of first conductive layers is higher than a concentration of the first metal of the second conductive layer.
2. The semiconductor device according to claim 1 , wherein
the at least one of the plurality of first conductive layers includes a first region and a second region closer to the third conductive layer than the first region, and
a concentration of the first metal of the second region is higher than a concentration of the first metal of the first region.
3. The semiconductor device according to claim 1 , wherein
in a first cross-sectional surface extending in the first direction and the second direction and including the plurality of first conductive layers, the third conductive layer surrounds outer circumferential surface of at least one of the plurality of first conductive layers and is in contact with the outer circumferential surfaces of the at least one of the plurality of first conductive layers.
4. The semiconductor device according to claim 1 , wherein
in a second cross-sectional surface extending in the first direction and the second direction and including the second conductive layer, the fourth conductive layer surrounds at least a part of an outer circumferential surface of the second conductive layer and is in contact with the at least a part of the outer circumferential surface of the second conductive layer.
5. The semiconductor device according to claim 1 , wherein
the first metal is at least one of tin (Sn), niobium (Nb), titanium (Ti), or tungsten (W).
6. The semiconductor device according to claim 1 , wherein
a concentration ratio between the first metal and the second metal of the at least one of the plurality of first conductive layers is higher than a concentration ratio between the first metal and the second metal of the second conductive layer.
7. The semiconductor device according to claim 2 , wherein
a concentration ratio between the first metal and the second metal in the second region is higher than a concentration ratio between the first metal and the second metal in the first region.
8. The semiconductor device according to claim 5 , wherein
the second metal is indium (In).
9. The semiconductor device according to claim 1 , wherein
each of the third conductive layer and the fourth conductive layer contains at least one of tungsten (W), aluminum (Al), tantalum (Ta), titanium (Ti), or silicon (Si).
10. The semiconductor device according to claim 1 , wherein
the third conductive layer is in contact with the fourth conductive layer.
11. The semiconductor device according to claim 1 , wherein
the third conductive layer is separated from the fourth conductive layer.
12. The semiconductor device according to claim 9 , comprising:
a seventh conductive layer arranged with one of the plurality of first conductive layers in the third direction;
an oxide semiconductor layer disposed between the one of the plurality of first conductive layers and the seventh conductive layer, the oxide semiconductor layer being in contact with the one of the plurality of first conductive layers and the seventh conductive layer; and
an eighth conductive layer surrounding the oxide semiconductor layer.
13. A manufacturing method of a semiconductor device, wherein
the semiconductor device includes:
a plurality of first conductive layers arranged in a first direction and a second direction intersecting with the first direction or arranged in the first direction and extending in the second direction, a width in the first direction thereof being a first width;
a second conductive layer arranged with the plurality of first conductive layers in the first direction or the second direction, a smaller one of a width in the first direction thereof and a width in the second direction thereof being a second width that is larger than the first width;
a third conductive layer in contact with one end portion of at least one of the plurality of first conductive layers in a third direction intersecting with the first direction and the second direction; and
a fourth conductive layer in contact with one end portion of the second conductive layer in the third direction, wherein
the at least one of the plurality of first conductive layers and the second conductive layer contain a first metal, a second metal different from the first metal, and oxygen (O), and
a concentration of the first metal of the at least one of the plurality of first conductive layers is higher than a concentration of the first metal of the second conductive layer, wherein
the manufacturing method of the semiconductor device comprising:
forming a first insulating layer;
forming a plurality of first openings in positions corresponding to the plurality of first conductive layers in the first insulating layer;
forming the plurality of first conductive layers inside the plurality of first openings;
forming a second opening in a position corresponding to the second conductive layer in the first insulating layer after forming the plurality of first conductive layers; and
forming the second conductive layer inside the second opening.
14. The manufacturing method of the semiconductor device according to claim 13 , comprising:
forming the third conductive layer and the fourth conductive layer before forming the first insulating layer,
forming the plurality of first openings penetrating the first insulating layer to expose the third conductive layer, and
forming the second opening penetrating the first insulating layer to expose the fourth conductive layer.
15. The manufacturing method of the semiconductor device according to claim 13 , wherein
the third conductive layer is formed inside one of the plurality of first openings before the plurality of first conductive layers are formed, and
the fourth conductive layer is formed inside the second opening before the second conductive layer is formed.
16. The manufacturing method of the semiconductor device according to claim 13 , wherein
the first conductive layers and the second conductive layer are formed by a sputtering method.
17. The manufacturing method of the semiconductor device according to claim 13 , wherein
the first conductive layers and the second conductive layer are formed by a CVD method.
18. A manufacturing method of a semiconductor device, wherein
the semiconductor device includes:
a plurality of first conductive layers arranged in a first direction and a second direction intersecting with the first direction or arranged in the first direction and extending in the second direction, a width in the first direction thereof being a first width;
a second conductive layer arranged with the plurality of first conductive layers in the first direction or the second direction, a smaller one of a width in the first direction thereof and a width in the second direction thereof being a second width that is larger than the first width;
a third conductive layer in contact with one end portion of at least one of the plurality of first conductive layers in a third direction intersecting with the first direction and the second direction; and
a fourth conductive layer in contact with one end portion of the second conductive layer in the third direction, wherein
the at least one of the plurality of first conductive layers and the second conductive layer contain a first metal, a second metal different from the first metal, and oxygen (O), and
a concentration of the first metal of the at least one of the plurality of first conductive layers is higher than a concentration of the first metal of the second conductive layer, wherein
the manufacturing method of the semiconductor device comprising:
forming a first insulating layer;
forming a plurality of first openings and a second opening respectively in positions corresponding to the plurality of first conductive layers and in a position corresponding to the second conductive layer in the first insulating layer; and
forming the plurality of first conductive layers and the second conductive layer respectively inside the plurality of first openings and inside the second opening after forming the plurality of first openings and the second opening.
19. The manufacturing method of the semiconductor device according to claim 18 , wherein
the first conductive layers and the second conductive layer are formed by a sputtering method.
20. The manufacturing method of the semiconductor device according to claim 18 , wherein
the first conductive layers and the second conductive layer are formed by a CVD method.