IP Library › Granted Patent US 12,383,982
Granted Patent B2
US 12,383,982 · App. 17/811,196 · Granted Aug 12, 2025

Laminated device wafer forming method

Inventors: Zhiwen Chen (Tokyo, JP); Kyosuke Kobinata (Tokyo, JP); Shunsuke Teranishi (Tokyo, JP); Akihito Kawai (Tokyo, JP)
Assignee: DISCO CORPORATION
B23K26/38H01L21/02021B23K26/046
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Quick Facts
Patent No.
US 12,383,982
App. No.
17/811,196
Granted
Aug 12, 2025
Kind
B2
Abstract

A laminated device wafer forming method includes a laminating step of laminating a first device wafer and a second device wafer to each other, the laminating step including a position adjusting step of imaging, by an imaging unit, a first predetermined line formed on a peripheral portion on the front surface side of the first device wafer and located outside rectangular regions corresponding to devices and a second predetermined line formed on a peripheral portion on the front surface side of the second device wafer and located outside the rectangular regions corresponding to the devices, and adjusting relative positions of the first device wafer and the second device wafer by using the first predetermined line and the second predetermined line.

Claims (21)

1. A laminated device wafer forming method for forming a laminated device wafer in which a plurality of device wafers are laminated by laminating a first device wafer and a second device wafer to each other, the first device wafer and the second device wafer having a plurality of planned dividing lines set in a lattice manner on front surfaces of the first device wafer and the second device wafer and each having a device formed in each of a plurality of regions each in a rectangular shape, the plurality of regions being demarcated by the plurality of planned dividing lines, the laminated device wafer forming method comprising:

a removing step of removing at least a chamfered portion formed on a peripheral portion on the front surface side of the first device wafer by processing the first device wafer;

a thinning step of grinding and thinning a back surface side of the first device wafer after the removing step; and

a laminating step of laminating the first device wafer and the second device wafer to each other after the thinning step;

the laminating step including a position adjusting step of imaging, by an imaging unit, a first predetermined line formed on a peripheral portion on the front surface side of the first device wafer and located outside the rectangular regions corresponding to the devices and a second predetermined line formed on a peripheral portion on the front surface side of the second device wafer and located outside the rectangular regions corresponding to the devices, and adjusting relative positions of the first device wafer and the second device wafer by using the first predetermined line and the second predetermined line.

2. The laminated device wafer forming method according to claim 1 , wherein

the laminating step laminates the back surface side of the first device wafer and the front surface side of the second device wafer to each other.

3. The laminated device wafer forming method according to claim 1 , wherein

the position adjusting step images the first predetermined line and the second predetermined line simultaneously by the imaging unit.

4. The laminated device wafer forming method according to claim 1 , wherein

the first predetermined line is a first planned dividing line set on the front surface of the first device wafer,

the second predetermined line is a second planned dividing line set on the front surface of the second device wafer,

the first planned dividing line and the second planned dividing line have a same shape and a same size, and

the position adjusting step aligns the first planned dividing line and the second planned dividing line with each other.

5. The laminated device wafer forming method according to claim 1 , wherein

the position adjusting step adjusts the relative positions of the first device wafer and the second device wafer by using, in addition to the first predetermined line and the second predetermined line, a third predetermined line set in orthogonal positional relation to the first predetermined line, formed on the peripheral portion on the front surface side of the first device wafer, and located outside the rectangular regions corresponding to the devices, and a fourth predetermined line set in orthogonal positional relation to the second predetermined line, formed on the peripheral portion on the front surface side of the second device wafer, and located outside the rectangular regions corresponding to the devices.

6. A laminated device wafer forming method for forming a laminated device wafer in which a plurality of device wafers are laminated by laminating a first device wafer and a second device wafer to each other, the first device wafer and the second device wafer having a plurality of planned dividing lines set in a lattice manner on front surfaces of the first device wafer and the second device wafer and each having a device formed in each of a plurality of rectangular regions demarcated by the plurality of planned dividing lines, the laminated device wafer forming method comprising:

a modified layer forming step of positioning a condensing point of a laser beam having a wavelength transmitted through the first device wafer at a predetermined depth in a thickness direction of the first device wafer in a peripheral portion of the first device wafer, and forming a modified layer;

a thinning step of grinding and thinning a back surface side of the first device wafer and removing the peripheral portion of the first device wafer after the modified layer forming step; and

a laminating step of laminating the first device wafer and the second device wafer to each other after the thinning step;

the laminating step including a position adjusting step of imaging, by an imaging unit, a first predetermined line formed on a peripheral portion on the front surface side of the first device wafer and located outside the rectangular regions corresponding to the devices and a second predetermined line formed on a peripheral portion on the front surface side of the second device wafer and located outside the rectangular regions corresponding to the devices, and adjusting relative positions of the first device wafer and the second device wafer by using the first predetermined line and the second predetermined line.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 7, 2022
From: CHEN, ZHIWEN; KOBINATA, KYOSUKE; TERANISHI, SHUNSUKE; KAWAI, AKIHITO
To: DISCO CORPORATION
Reel/Frame 060432/0929 →
Priority Claims (1)
JP 2021-116854 · Jul 15, 2021 · national
Continuity (1)
Related Publication 20230020620A1 · Jan 19, 2023
References Cited (3)
US 20100219500A1 · Morita · 2010 [cited by examiner]
US 20200111658A1 · Sugiya · 2020 [cited by examiner]
JP 2008153499A · 2008 [cited by applicant]
Cited By (1)
US 12,707,985